4 inch低位错密度InP单晶的VGF生长及性质研究

采用高压垂直温度梯度凝固法(VGF)生长了非掺、掺硫和掺铁的4 inch直径(100)InP单晶,获得的单晶的平均位错密度均小于5000 cm-2.对4 inch InP晶片上进行多点X-射线双晶衍射测试, 其(004)X-射线双晶衍射峰的半峰宽约为30弧秒且分布均匀.与液封直拉法(LEC)相比, VGF-InP单晶生长过程的温度梯度很低,导致其孪晶出现的几率显著增加.然而大量晶体生长结果表明VGF-InP晶锭上出现孪晶后,通常晶体的生长方向仍为(100)方向,这确保从生长的4 inchVGF-InP(100)晶锭上仍能获得相当数量的2~4 inch(100)晶片.由于铁在InP中的分凝系数很小,掺Fe-InP单晶VGF生长过程中容易出现组份过冷,导致多晶生长.通过控制生长温度梯度及掺铁量,可获得较高的掺铁InP单晶成晶率.对VGF-InP单晶的电学性质、位错密度及位错的分布特点、晶体完整性等进行了研究.     

火焰原子吸收分光光度法测定铅精矿中高含量银

建立火焰原子吸收分光光度(AAS)法测定铅精矿中高含量银的方法。采用盐酸、硝酸低温加热分解样品,然后用15%盐酸溶液复溶,以火焰原子吸收光度计于波长328.07 nm处测定银的含量。该方法精密度为0.5%(n=11),方法检出限为0.005 3 g/t,加标回收率为99.7%～100.2%。该方法流程简单,分析结果准确,可测定中银含量达2 000g/t的铅精矿,能够满足矿山日常大批量样品快速分析的生产需要。     

Direct observation of λ-DNA molecule reversal movement within microfluidic channels under electric field with single molecule imaging technique

The electrodynamic characteristics of single DNA molecules moving within micro-/nano-fluidic channels are important in the design of biomedical chips and bimolecular sensors. In this study, the dynamic properties of λ-DNA molecules transferring along the microchannels driven by the external electrickinetic force were systemically investigated with the single molecule fluorescence imaging technique. The experimental results indicated that the velocity of DNA molecules was strictly dependent on the value of the applied electric field and the diameter of the channel. The larger the external electric field, the larger the velocity, and the more significant deformation of DNA molecules. More meaningfully, it was found that the moving directions of DNA molecules had two completely different directions:(i) along the direction of the external electric field, when the electric field intensity was smaller than a certain threshold value;(ii) opposite to the direction of the external electric field, when the electric field intensity was greater than the threshold electric field intensity.The reversal movement of DNA molecules was mainly determined by the competition between the electrophoresis force and the influence of electro-osmosis flow. These new findings will theoretically guide the practical application of fluidic channel sensors and lab-on-chips for precisely manipulating single DNA molecules.     

热解吸色谱装置的几点改进

1958年,Nelsen 和 Eggertsen 提出了热解吸色谱方法(连续流动色谱法),至今已成为一种通用的测量比表面积的方法。目前,国内外都已有多种采用此法的比表面积测定仪出现。1975年我国研究工作者提出了一种以纯氦气为载气的热解吸色谱法(双气路法),可以在常压下测定等温吸附线的全过程,从而可以测定固体物质的比表面、比孔体积和孔径分布,并以此流程为基础,研制成功了 ST—03型表面与孔径测定仪。     

4-(4-甲基-2-硝基苯重氮基)氨基-4’-氯偶氮苯的合成及其与汞(Ⅱ)的显色反应

合成了新显色剂4-(4-甲基-2-硝基苯重氮基)氨基-4’-氯偶氮苯(简称MNDACB),并研究了其在Triton X-100存在下与Hg(Ⅱ)的显色反应。结果表明,在pH 11.0的Na2B4O7-NaOH缓冲介质中,试剂与Hg(Ⅱ)形成稳定的红色配合物,最大吸收波长位于495 nm,表观摩尔吸光系数为1.45×105L.mol-1.cm-1,Hg(Ⅱ)的质量浓度在0～0.8μg/mL范围内服从比耳定律。所拟方法操作简便,灵敏度高,用于废水中微量Hg(Ⅱ)的测定,结果满意。     

低位错密度4 inch GaSb(100)单晶生长及高质量衬底制备

采用液封直拉法(LEC)生长了4 inch直径(100)GaSb单晶并进行了衬底晶片的加工制备.通过优化热场,可重复生长出非掺和掺Te 整锭(100)单晶,单晶锭的重量为5~8 kg, 成晶率可达80;以上.4 inch(100)晶片大部分区域的位错腐蚀坑密度小500 cm-2,其(004)双晶衍射峰的半峰宽为29弧秒,表明晶片衬底的完整性相当好.晶体生长过程中固液界面较为平坦,因而晶片表现出良好的横向电学均匀性.经研磨和机械化学抛光,制备出具备良好平整度和表面粗糙度的开盒即用衬底晶片.通过控制本征受主缺陷浓度和掺杂浓度,制备出具有良好近红外透光率的n型GaSb单晶衬底.     

N-type GaSb single crystals with high below-band gap transmission

Te-doped GaSb single crystals are studied by measuring Hall effect, infrared(IR) transmission and photoluminescence(PL) spectra. It is found that the n-type GaSb with IR transmittance can be obtained as high as 60% by the critical control of the Te-doping concentration and electrical compensation. The concentration of the native acceptor-associated defects is apparently low in the Te-doped GaSb compared with those in undoped and heavily Te-doped GaSb. The mechanism for the high IR transmittance is analyzed by considering the defect-involved optical absorption process.     

{[Ln(H_2O) _2(O_2CCH_2CH_2CO_2) _3]·H_2O}_n (Ln=Eu(Ⅲ),Sm(Ⅲ)的合成、晶体结构及荧光性质

用溶剂热法合成了稀土-有机配位聚合物{[Ln(H_2O) _2(O_2CCH_2CH_2CO_2) _3]·H_2O}n (Ln=Eu(Ⅲ),Sm(Ⅲ)).采用红外光谱、X射线单晶衍射对其结构进行了表征.结果表明:两个晶体同属于单斜晶系,空间群为C2/c,含铕配位聚合物1的晶体结构参数为:a= 2.000(04) nm,b=0 .7780(02) nm,c=1.387(03) nm,α=90 °,β=121.58(3) °,γ= 90 °,V＝1.838(66) nm~3,Z＝4,F(000)=1344, M_r= 706.18, D_c= 2.551 Mg/m~3, μ=6.839 mm~(-1), R_1=0.0357, ωR_2=0.1012;含钐配位聚合物2的晶体结构参数为:a = 2.0072(02)nm,b = 0.7822(26)nm,c= 1.3901(61) nm,α = 90°,β = 121.5840°,γ = 90 °,V＝1.8593(3) nm~3,Z＝4,F(000)=1336,M_r= 70296,D_c= 2.511 Mg/m~3,μ= 6.333 mm~(-1),R_1=0.0210,ωR_2=0.0498.同时研究了它们的固体荧光性能.