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First-principles study of the formation and electronic structure of a conductive filament in ZnO-based resistive random access memory 下载免费PDF全文
Oxygen vacancy plays a crucial role in resistive switching. To date, a quantitative study about the distribution of the oxygen vacancies and its effect on the resistive switching has not yet been reported. In this study, we report our first-principles calculations in ZnO-based resistive switching memory grown on a Pt substrate. We show that the oxygen vacancies prefer to be located in the ZnO (0001) plane, i.e. in the direction parallel to the film surface in the preparation process. These oxygen vacancies drift easily in the film when a voltage is applied in the SET process and prefer to form a line defect perpendicular to the film surface. An isolated oxygen vacancy makes little contribution to the conductivity of ZnO, whereas the ordering of oxygen vacancies in the direction perpendicular to the film surface leads to a dramatic enhancement of the conductivity and thus forms conductive filaments. The semiconducting characteristics of the conductive filaments are confirmed experimentally. 相似文献
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Ferromagnetism in High-Surface-Area ZnO Nanosheets Prepared by a Template-Assisted Hydrothermal Method 下载免费PDF全文
High-surface-area ZnO nanosheets are prepared using a template-assisted hydrothermal method.A saturation moment as high as 0.02 emu/g is obtained for the ZnO nanosheets.Both photoluminescence spectroscopy and x-ray photoelectron spectroscopy demonstrate the existence of abundant oxygen vacancies on the surfaces of the nanosheets.In addition,the oxygen vacancy concentration increases with an increasing nanosheet surface area.The results show that the origin of the room-temperature ferromagnetism is closely related with a large surface area and oxygen vacancies of the nanosheets.This finding suggests that the high-surface-area ZnO nanosheets are promising to be applied to spintronic devices. 相似文献
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以球磨的B/BN混合物为原料,采用一步法在蘸有催化剂的硅片上合成了大量BN纳米刺包裹在Si纳米或微米线上的复合团簇结构.EDS和SAED表明外层的纳米刺是六方BN多晶,里面包裹的Si纳米或微米线则是立方的Si单晶.实验结果表明合成温度对BN/Si复合结构形成有重要影响,只有在1250 ℃以上的温度才会生成BN /Si复合团簇结构,另外只有当硅片与样品接触时才会形成复合产物.PL光谱显示复合产物在360 nm的激发下,其发光峰在303 nm(4.1 eV)和423 nm(2.93 eV)处. 相似文献
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