Local leakage current behaviours of BiFeO3 films

The leakage current behaviours of polycrystalline BiFeO₃ thin films are investigated by using both conductive atomic force microscopy and current-voltage characteristic measurements. The local charge transport pathways are found to be located mainly at the grain boundaries of the films. The leakage current density can be tuned by changing the post-annealing temperature, the annealing time, the bias voltage and the light illumination, which can be used to improve the performances of the ferroelectric devices based on the BiFeO₃ films. A possible leakage mechanism is proposed to interpret the charge transports in the polycrystalline BiFeO₃ films.     

Modulation of physical properties of oxide thin films by multiple fields

Recent studies of the modulation of physical properties in oxide thin films by multiple fields are reviewed.Some of the key issues and prospects of this area of study are also addressed.Oxide thin films exhibit versatile physical properties such as magnetism,ferroelectricity,piezoelectricity,metal–insulator transition(MIT),multiferroicity,colossal magnetoresistivity,switchable resistivity.More importantly,the exhibited multifunctionality can be tuned by various external fields,which has enabled demonstration of novel electronic devices.     

氯仿改性聚（3-己基噻吩）有机电化学晶体管及其神经突触功能模仿

通过旋涂法制备了有机半导体聚（3-己基噻吩）（P3HT）薄膜，在二氯苯溶剂中引入氯仿对P3HT薄膜进行改性。以改性的P3HT薄膜作为沟道层，以离子凝胶作为电解质层制备了有机电化学晶体管（OECT）。通过原子力显微镜、紫外-可见光谱和拉曼光谱探究了氯仿改性对P3HT薄膜粗糙度和分子有序度的影响，采用半导体参数仪研究了氯仿改性对材料电学性能的影响。实验结果表明，氯仿改性降低了P3HT薄膜的粗糙度，提高了分子排列的有序度。氯仿改性后的OECT在-0.5 V和-1.0 V的电脉冲刺激下呈现显著的神经突触兴奋脉冲电流响应特性，相比于未改性的器件，电导调控幅值分别增加了约2倍和16倍，且延长了其保持特性。基于氯仿改性OECT的人工神经突触网络将MNIST手写数字识别准确率从73.6%提高至92.7%，有望在高性能神经形态计算方面发挥重要作用。