k-Hankel Gabor Transform and Its Applications to the Theory of Localization Operators

Analysis Mathematica - We introduce and study the k-Hankel Gabor transform. We investigate the localization operators for this transform. In particular, we study their trace class properties and we...     

Effective field and the Bloch-Siegert shift at bichromatic excitation of multiphoton EPR

The dynamics of multiphoton transitions in a two-level spin system excited by transverse microwave and longitudinal RF fields with the frequencies ω_mw and ω_rf, respectively, is analyzed. The effective time-independent Hamiltonian describing the “dressed” spin states of the “spin + bichromatic field” system is obtained by using the Krylov-Bogoliubov-Mitropolsky averaging method. The direct detection of the time behavior of the spin system by the method of nonstationary nutations makes it possible to identify the multiphoton transitions for resonances ω₀ = ω_mw + rω_rf (ω₀ is the central frequency of the EPR line, r = 1, 2), to measure the amplitudes of the effective fields of these transitions, and to determine the features generated by the inhomogeneous broadening of the EPR line. It is shown that the Bloch-Siegert shifts for multiphoton resonances at the inhomogeneous broadening of spectral lines reduce only the nutation amplitude but do not change their frequencies.     

AGS能量下π~－π~－的Bose—Einstein关联

全同粒子间的玻色－爱因斯坦关联可以用来研究相对论性核碰撞中次级粒子源分布及有关的物理问题．本文用强子级联模型（ＨＣＭ）模拟２８Ｓｉ（１４．６ＡＧＣＶ／ｃ）＋Ａｕ反应，得到π－粒子的ｆｒｅｅｚｅ－ｏｕｔ状态，进而计算了π－π－关联函数，取得与实验一致的结果．还计算了ｆｒｅｅｚｅ—ｏｕｔπ－源的均方根线度，并讨论了它与拟合方法抽取的源参数间的关系．     

具有HfN/HfO2栅结构的p型MOSFET中的负偏置-温度不稳定性研究

研究了HfN/HfO₂高K栅结构p型金属-氧化物-半导体(MOS)晶体管(MOSFET)中，负 偏置-温度应力引起的阈值电压不稳定性(NBTI)特征.HfN/HfO₂高K栅结构的等效 氧化层厚度(EOT)为1.3nm，内含原生缺陷密度较低.研究表明，由于所制备的HfN/HfO₂ 高K栅结构具有低的原生缺陷密度，因此在p-MOSFET器件中观察到的NBTI属HfN/HfO2高K栅结构的本征特征，而非工艺缺陷引起的；进一步研究表明，该HfN/HfO₂高K栅结构中观察到的NBTI与传统的SiO₂基栅介质p-MOSFET器件中观察 到的NBTI具有类似的特征，可以被所谓的反应-扩散(R-D)模型表征： HfN/HfO₂ 栅结构p-MOSFET器件的NBTI效应的起源可以归为衬底注入空穴诱导的界面反应机理，即在负 偏置和温度应力作用下，从Si衬底注入的空穴诱导了Si衬底界面Si-H键断裂这一化学反应的 发生，并由此产生了Si^＋陷阱在Si衬底界面的积累和H原子在介质层内部的扩散 ，这种Si^＋陷阱的界面积累和H原子的扩散导致了器件NBTI效应的发生. 关键词： 高K栅介质 负偏置-温度不稳定性(NBTI) 反应-扩散(R-D)模型     

Synthesis of macrocyclic tetraamides derived from α-amino acids and their investigations using ESI-MS technique

Chiral α,ω-diesters react under high-pressure conditions (10 kbar) with α,ω-diamines to give chiral cyclic tetraamides of C₂-symmetry. The complexation properties of tetraamides towards alkali metal cations (Li⁺, Na⁺, K⁺, Rb⁺ and Cs⁺) were estimated on the basis of ESI-MS spectra.     

Regioselective N-vinylation of cyclic thionocarbamates through a vinyl bis-sulfone methodology

A vinyl bis-sulfone Michael type approach towards heteroatom vinylation was applied on nitrogen derivatives. Cyclic thionocarbamates--mainly 1,3-oxazolidine-2-thiones--were converted into their N-vinyl counterparts; the procedure proved particularly efficient in the case of carbohydrate-derived complex structures.