Structural and electronic properties of graphite layers grown on SiC(0 0 0 1)

Photoelectron spectroscopy, low-energy electron diffraction, and scanning probe microscopy were used to investigate the electronic and structural properties of graphite layers grown by solid state graphitization of SiC(0 0 0 1) surfaces. The process leads to well-ordered graphite layers which are rotated against the substrate lattice by 30°. On on-axis 6H-SiC(0 0 0 1) substrates we observe graphitic layers with up to several 100 nm wide terraces. ARUPS spectra of the graphite layers grown on on-axis 6H-SiC(0 0 0 1) surfaces are indicative of a well-developed band structure. For the graphite/n-type 6H-SiC(0 0 0 1) layer system we observe a Schottky barrier height of ?_B,n = 0.3 ± 0.1 eV. ARUPS spectra of graphite layers grown on 8° off-axis oriented 4H-SiC(0 0 0 1) show unique replicas which are explained by a carpet-like growth mode combined with a step bunching of the substrate.     

Algebras with Collapsing Monomials

A semigroup S is called collapsing if there exists a positiveinteger n such that for every subset of n elements in S, atleast two distinct words of length n on these letters are equalin S. In particular, S is collapsing whenever it satisfies alaw. Let U(A) denote the group of units of a unitary associativealgebra A over a field k of characteristic zero. If A is generatedby its nilpotent elements, then the following conditions areequivalent: U(A) is collapsing; U(A) satisfies some semigrouplaw; U(A) satisfies the Engel condition; U(A) is nilpotent;A is nilpotent when considered as a Lie algebra.     

Low noise 80–115 GHz quasiparticle mixer with small Nb/Al-Oxide/Nb tunnel junctions

Millimeter-wave characterization of a heterodyne receiver using (2 m²) Nb/Al-Ox/Nb Superconducting-Insulator-Superconducting (SIS) junctions arrays is reported. The fabrication of the Nb/Al-Ox/Nb SIS junction arrays as a heterodyne mixer is described. The leakage current of these junctions is below 2A at 4.2K and unmeasurable at 2.5K. The receiver gave a noise temperature Double Side Band (DSB) between 63K and 187K over the frequency range 80 to 115 GHz at the first conversion peak. The results are comparable to those obtained with SIS receivers using well researched lead junctions. Contrary to the lead junctions, our mixer using all Nb junctions have proven remarkably stable with respect to thermal cycling, characteristics which are required for space applications. To our knowledge, this is the most reliable low noise receiver operating in this frequency range.     

Kinetic studies of laser-induced synthesis of thin vanadium pentoxide films

The kinetics of Ar⁺ laser-induced oxidation of 100 nm thick vanadium films on glass substrates is followed by measuring time-dependent changes in reflected and transmitted intensity of a He-Ne probe beam. The growth rate of the vanadium pentoxide layer increases with increasing laser powerP as = ₀ exp(-a/P). At power densities above kW/cm² vanadium pentoxide crystallizes from the melt.     

Preliminary estimate of the cost of ethanol production for ssf technology

The Solar Energy Research Institute (SERI) recently completed a detailed engineering and economic analysis of the simultaneous saccharification and fermentation (SSF) based wood-to-ethanol process. The reference-case design was based on a plant capacity of 1920 dry t/d and a wood cost of $42/dry t. For this case, the preliminary estimate of the production cost of the ethanol product is about $1.22/gal. The combined effects of optimizing SSF enzyme loading, increasing plant capacity to 10,000 dry t/d, and reducing wood cost to $34/dry t are to reduce the preliminary estimate of the production cost to about $0.95/gal. Other technological improvements may further reduce the production cost. Certain technical assumptions, inherent in the analysis, are being investigated further.