A Low‐Cost and Environmentally Friendly Mixed Polyanionic Cathode for Sodium‐Ion Storage

Sodium‐ion batteries (NIBs) are the most promising alternatives to lithium‐ion batteries in the development of renewable energy sources. The advancement of NIBs depends on the exploration of new electrode materials and fundamental understanding of working mechanisms. Herein, via experimental and simulation methods, we develop a mixed polyanionic compound, Na₂Fe(C₂O₄)SO₄?H₂O, as a cathode for NIBs. Thanks to its rigid three dimensional framework and the combined inductive effects from oxalate and sulfate, it delivered reversible Na insertion/desertion at average discharging voltages of 3.5 and 3.1 V for 500 cycles with Coulombic efficiencies of ca. 99 %. In situ synchrotron X‐ray measurements and DFT calculations demonstrate the Fe²⁺/Fe³⁺ redox reactions contribute to electron compensation during Na⁺ desertion/insertion. The study suggests mixed polyanionic frameworks may provide promising materials for Na ion storage with the merits of low cost and environmental friendliness.     

A Plasma‐Triggered O−S Bond and P−N Junction Near the Surface of a SnS2 Nanosheet Array to Enable Efficient Solar Water Oxidation

A photoelectrochemical (PEC) cell can split water into hydrogen and oxygen with the assistance of solar illumination. However, its application is still limited by excessive bulk carrier recombination and sluggish surface oxygen evolution reaction (OER) kinetics. Taking SnS₂ as an example, a promising layered optoelectronic semiconductor, Ar plasma treatment strategy was used to introduce a SnS/SnS₂ P?N heterojunction and O?S bond near the surface of a SnS₂ nanosheet array, simultaneously increasing the separation efficiency of photogenerated electron–hole pairs in the bulk and lowering the OER overpotential at the surface. The onset potential of the plasma‐treated SnS₂ nanosheet array shifts negatively to 0.16 V, and the photocurrent density at 1.23 V vs. RHE boosts to 2.15 mA cm^?2, which is 7 times that of pristine SnS₂. This work demonstrates a facile plasma treatment strategy to modulate the energy band structure and surface chemical states for improved PEC performance.     

SUT‐NANOTEC‐SLRI beamline for X‐ray absorption spectroscopy

The SUT‐NANOTEC‐SLRI beamline was constructed in 2012 as the flagship of the SUT‐NANOTEC‐SLRI Joint Research Facility for Synchrotron Utilization, co‐established by Suranaree University of Technology (SUT), National Nanotechnology Center (NANOTEC) and Synchrotron Light Research Institute (SLRI). It is an intermediate‐energy X‐ray absorption spectroscopy (XAS) beamline at SLRI. The beamline delivers an unfocused monochromatic X‐ray beam of tunable photon energy (1.25–10 keV). The maximum normal incident beam size is 13 mm (width) × 1 mm (height) with a photon flux of 3 × 10⁸ to 2 × 10¹⁰ photons s^?1 (100 mA)^?1 varying across photon energies. Details of the beamline and XAS instrumentation are described. To demonstrate the beamline performance, K‐edge XANES spectra of MgO, Al₂O₃, S₈, FeS, FeSO₄, Cu, Cu₂O and CuO, and EXAFS spectra of Cu and CuO are presented.     

Full-Field Determination of Principal-Stress Directions Using Photoelasticity with Plane-Polarized RGB Lights

In this paper, we propose a new three-wavelength method for automatic measurement of principal-stress directions over an entire model on the basis of four-step phase shift method. This method uses four fringe patterns captured by a color charge-coupled devices (CCD) camera corresponding to four angular position arrangements of polaroids in a dark-field plane polariscope. The principal-stress directions can be determined by a single calculation. The method is applied to a circular disc under compression. The principal-stress direction distributions obtained from the proposed method are compared with those obtained from a conventional method and theory. It can be obviously seen that the proposed method accurately yields the principal-stress directions compared with the conventional method.     

Enhancement Propagation of Protocorms in Orchid (Cymbidium tracyanum L. Castle) by Cold Atmospheric Pressure Air Plasma Jet

Plasma Chemistry and Plasma Processing - Propagation of orchid (Cymbidium tracyanum L. Castle) treated by using an air cold atmospheric pressure plasma jet at room temperature was investigated. The...     

A Low-Cost and Environmentally Friendly Mixed Polyanionic Cathode for Sodium-Ion Storage

Sodium-ion batteries (NIBs) are the most promising alternatives to lithium-ion batteries in the development of renewable energy sources. The advancement of NIBs depends on the exploration of new electrode materials and fundamental understanding of working mechanisms. Herein, via experimental and simulation methods, we develop a mixed polyanionic compound, Na₂Fe(C₂O₄)SO₄⋅H₂O, as a cathode for NIBs. Thanks to its rigid three dimensional framework and the combined inductive effects from oxalate and sulfate, it delivered reversible Na insertion/desertion at average discharging voltages of 3.5 and 3.1 V for 500 cycles with Coulombic efficiencies of ca. 99 %. In situ synchrotron X-ray measurements and DFT calculations demonstrate the Fe²⁺/Fe³⁺ redox reactions contribute to electron compensation during Na⁺ desertion/insertion. The study suggests mixed polyanionic frameworks may provide promising materials for Na ion storage with the merits of low cost and environmental friendliness.     

Structure of praseodymium and neodymium gallate glasses

The rare-earth gallate glasses R₄Ga₆O₁₅, where R denotes Pr or Nd, were prepared using an aerodynamic levitator and laser heating system. The structure was studied by applying the method of isomorphic substitution in neutron diffraction which allows for an identification of the gallium and rare-earth coordination environments. The results give a mean Ga-O coordination number of 4.2(1) at a distance of 1.85(2) Å and a mean R-O coordination number of 7.4(2) at a mean distance of 2.38(2) Å. The experimental results are consistent with a glass network built from GaO₄ tetrahedra and with the presence of GaO₆ octahedra at the 10(5)% level.