Synthesis and biological evaluation of some new class of benzothiazole–pyrazole ligands containing arene ruthenium,rhodium and iridium complexes

Transition Metal Chemistry - Metal complexes 1–9 have been synthesized by reacting the benzothiazole–pyrazole derivative ligands (L1, L2 and L3) with the metal precursors of ruthenium...     

Structural and physical properties of Mg3−xZnxSb2 (x=0-1.34)

The Mg_3−xZn_xSb₂ phases with x=0-1.34 were prepared by direct reactions of the elements in tantalum tubes. According to the X-ray single crystal and powder diffraction, the Mg_3−xZn_xSb₂ phases crystallize in the same P3¯m1 space group as the parent Mg₃Sb₂ phase. The Mg_3−xZn_xSb₂ structure is different from the other substituted structures of Mg₃Sb₂, such as (Ca, Sr, Ba) Mg₂Sb₂ or Mg_5.23Sm_0.77Sb₄, in a way that in Mg_3−xZn_xSb₂ the Mg atoms on the tetrahedral sites are replaced, while in the other structures Mg on the octahedral sites is replaced. Thermoelectric performance for the two members of the series, Mg₃Sb₂ and Mg_2.36Zn_0.64Sb₂, was evaluated from low to room temperatures through resistivity, Seebeck coefficient and thermal conductivity measurements. In contrast to Mg₃Sb₂ which is a semiconductor, Mg_2.36Zn_0.64Sb₂ is metallic and exhibits an 18-times larger dimensionless figure-of-merit, ZT, at room temperature. However, thermoelectric performance of Mg_2.36Zn_0.64Sb₂ is still poor and it is mostly due to its large electrical resistivity.     

Decoupling the electrical conductivity and Seebeck coefficient in the RE2SbO2 compounds through local structural perturbations

Compromise between the electrical conductivity and Seebeck coefficient limits the efficiency of chemical doping in the thermoelectric research. An alternative strategy, involving the control of a local crystal structure, is demonstrated to improve the thermoelectric performance in the RE(2)SbO(2) system. The RE(2)SbO(2) phases, adopting a disordered anti-ThCr(2)Si(2)-type structure (I4/mmm), were prepared for RE = La, Nd, Sm, Gd, Ho, and Er. By traversing the rare earth series, the lattice parameters of the RE(2)SbO(2) phases are gradually reduced, thus increasing chemical pressure on the Sb environment. As the Sb displacements are perturbed, different charge carrier activation mechanisms dominate the transport properties of these compounds. As a result, the electrical conductivity and Seebeck coefficient are improved simultaneously, while the number of charge carriers in the series remains constant.     

Structural, magnetic, and thermal characteristics of the phase transitions in Gd5GaxGe4−x magnetocaloric materials

Temperature-dependent, single crystal and powder X-ray diffraction studies as well as magnetization, and heat capacity measurements were carried out on two phases of the Gd₅Ga_xGe_4−x system: for x=0.7 and 1.0. Gd₅Ga_0.7Ge_3.3 shows three structure types as a function of temperature: (i) from 165 K to room temperature, the orthorhombic Sm₅Ge₄-type structure exists; (ii) below 150 K, it transforms to a orthorhombic Gd₅Si₄-type structure; and (iii) a monoclinic Gd₅Si₂Ge₂-type component is observed for the intermediate temperature range of 150 K≤T≤165 K. This is the first time that all these three structure types have been observed for the same composition. For Gd₅Ga_1.0Ge_3.0, the room temperature phase belongs to the orthorhombic Pu₅Rh₄-type structure with interslab contacts between main group atoms of 2.837(4) Å. Upon heating above 523 K, it transforms to a Gd₅Si₄-type structure with this distance decreasing to 2.521(7) Å before decomposing above 573 K.     

On the high-temperature phase transition of Gd5Si2Ge2

The first-order monoclinic-to-orthorhombic (beta-->gamma) phase transition of the giant magnetocaloric material Gd(5)Si(2)Ge(2) was studied using in situ high-temperature single-crystal X-ray diffraction. A special crystal mounting procedure was developed to avoid crystal contamination by oxygen or nitrogen at high temperatures. The elastic beta-->gamma transformation occurs at 300-320 degrees C during heating, and it is reversible during fast and slow heating and slow cooling but irreversible during rapid cooling. Contrary to theoretical predictions, the macroscopic distribution of the Si and Ge atoms remains the same in both the orthorhombic gamma-polymorph and the monoclinic beta-phase. It appears that interstitial impurities may affect stability of both the monoclinic and orthorhombic phases. In the presence of small amounts of air, the beta-->gamma transformation is complete only at 600 degrees C. The interslab voids, which can accommodate impurity atoms, have been located in the structure, and an effect of partially filling these voids with oxygen or nitrogen atoms on the beta-gamma transition is discussed.     

Decoupling of the magnetic and structural transformations in Er5Si4

Er5Si4 is a member of the R5(Si(4-x)Gex) family of alloys, where R=rare earth metal. Many of these compounds display a strong coupling between the magnetic and crystal lattices. In the naturally layered R5(Si(4-x)Gex) materials, inter- and intralayer interactions can be controlled by chemical and physical means; thus their physical properties can be tailored within wide limits. The Er5Si4 is unique in that the temperature dependent structural sequence is opposite that of other representatives of this family. The magnetism of Er5Si4 is reflective of its exceptional place within the series.     

Phase transformation driven by valence electron concentration: tuning interslab bond distances in Gd5GaxGe4-x

X-ray single crystal and powder diffraction studies on the Gd(5)Ga(x)()Ge(4)(-)(x)() system with 0 < or = x < or = 2.2 reveal dependence of interslab T-T dimer distances and crystal structures themselves on valence electron concentration (T is a mixture of Ga and Ge atoms). While the Gd(5)Ga(x)()Ge(4)(-)(x)() phases with 0 < or = x < or = 0.6 and valence electron concentration of 30.4-31 e(-)/formula crystallize with the Sm(5)Ge(4)-type structure, in which all interslab T-T dimers are broken (distances exceeding 3.4 A), the phases with 1 < or = x < or = 2.2 and valence electron concentration of 28.8-30 e-/formula adopt the Pu(5)Rh(4)- or Gd(5)Si(4)-type structures with T-T dimers between the slabs. An orthorhombic Pu(5)Rh(4)-type structure, which is intermediate between the Gd(5)Si(4)- and Sm(5)Ge(4)-type structures, has been identified for the Gd(5)GaGe(3) composition. Tight-binding linear-muffin-tin-orbital calculations show that substitution of three-valent Ga by four-valent Ge leads to larger population of the antibonding states within the dimers and, thus, to dimer stretching and eventually to dimer cleavage.     

Mono and dinuclear arene ruthenium(II) triazoles by 1,3-dipolar cycloadditions to a coordinated azide in ruthenium(II) compounds

The dimeric η(6)-hexamethylbenzene ruthenium(II) triazole compounds of formulation [{(η(6)-C(6)Me(6))Ru(N(3)C(2)(CO(2)R)(2))}(2)(μC(2)O(4))] have been synthesized by 1,3-diploar cycloadditions of coordinated azido compound [{(η(6)-C(6)Me(6))Ru(L(1))N(3)}] (1) with substituted acetylene, RO(2)CC(2)CO(2)R via unexpected oxidation of the coordinated ligand to oxalate (where; L(1) = 5-hydroxy-2-(hydroxymethyl)-4-pyrone; R = Me, 3 or Et, 4). In contrast, a similar 1,3-dipolar cycloaddition reaction of [{(η(6)-C(6)Me(6))Ru(L(2))N(3)}] (2) (where; L(2) = tropolone) with acetylene yielded the monomeric triazole compound [(η(6)-C(6)Me(6))Ru(L(2)){N(3)C(2)(CO(2)R)(2)}] (where; R = Me, 5; Et, 6). The compounds were characterized by spectroscopy and the structures of representative compounds 4 and 6 have been determined by single crystal X-ray diffraction. The two ruthenium centres in the compound 4, are linked by a tetra-dentate oxalate group. Both compounds, 4 and 6, crystallized in a triclinic space group P-1.