富含纤维素类农作物秆与丙烯酸接枝共聚制备高倍率吸水树脂

用棉花秆、麦秆和玉米秆等富含纤维素类农作物秆与丙烯酸接枝共聚制备了高倍率的吸水树脂. 研究了不同水质(去离子水、自来水及雨水)对接枝产物吸水性能的影响. 采用棉花秆、麦秆、玉米秆与丙烯酸的接枝产物对去离子水的吸水倍率分别为930, 790和630 g/g, 对自来水的吸水倍率分别为670, 350和250 g/g, 用玉米秆/地瓜淀粉混合物制备的接枝产物对雨水的吸水倍率为540 g/g. 为棉花秆、 麦秆及玉米秆等富含纤维素的农作物秆的深加工与应用开辟了一条途径.     

Self-compliance multilevel storage characteristic in HfO_2-based device

In this paper, the self-compliance bipolar resistive switching characteristic of an HfO_2-based memory device with Ag/HfO_2/Au structure for multilevel storage is investigated. By applying a positive voltage, the dual-step set processes corresponding to three stable resistance states are observed in the device. The multilevel switching characteristics can still be observed after 48 hours. In addition, the resistance values of all the three states show negligible degradation over 104 s,which may be useful for the applications in nonvolatile multilevel storage.     

TiOx-based self-rectifying memory device for crossbar WORM memory array applications

Resistive switching with a self-rectifying feature is one of the most effective solutions to overcome the crosstalk issue in a crossbar array. In this paper, a memory device based on Pt/TiO_x/W structure with self-rectifying property is demonstrated for write-once-read-many-times(WORM) memory application. After programming, the devices exhibit excellent uniformity and keep in the low resistance state(LRS) permanently with a rectification ratio as high as 10⁴ at ±1 V. The self-rectifying resistive switching behavior can be attributed to the Ohmic contact at TiO_x/W interface and the Schottky contact at Pt/TiO_x interface. The results in this paper demonstrate the potential application of TiO_x-based WORM memory device in crossbar arrays.