利用芯片式高场非对称波形离子迁移谱技术快速检测苯丙氨酸

采用金属扩散管-芯片式高场非对称波形离子迁移谱(FAIMS)技术对苯丙氨酸进行了快速检测,设定测试压强为250 kPa,金属扩散管温度为190℃,在优化的最佳分析条件下,即:载气流速为2000 mL/min,分离电压为152.8 V时,在正模式下获得了苯丙氨酸的离子特征谱图和补偿电压特征值-0.62 V.另外,利用FAIMS对不同浓度的苯丙氨酸样品气进行了检测,确定了FAIMS检测的定量线性范围为6～20 mg/L和检出限为5.9 mg/L.本实验为FAIMS应用于苯丙氨酸的快速检测提供了重要参考.     

Electroforming-Free and Highly Uniform Al2O3 Resistive Random Access Memory by ALD-Based In Situ Hydrogen Plasma Treatment

Al2O3 resistive random access memory （RRAM） with electroforming-free characteristics, high stability and uni- form properties is fabricated. The effect of the in situ hydrogen plasma enhanced treatment on the device performance is investigated. The dominated conduction mechanisms of the devices are ohmic behavior at low fields and space charge limited charge injection at high fields. The great improvement in the device properties is attributed to the hydrogen plasma treatment with the Al2O3 film, and this simple while effective atomic layer deposition based plasma treatment process is expected to be useful for other RRAM material systems as well.