荧光光谱法研究纳米二氧化钛光催化降解核壳型CdSe/ZnS量子点

在光诱导条件下,利用纳米二氧化钛(P25)对荧光物质核壳型CdSe/ZnS量子点进行光催化降解实验,通过荧光光谱法与传统分光光度法对比研究,测定降解液的吸光度来进行分析与评价降解率,从而判断降解程度和效率.光催化降解结果表明:对荧光物质CdSe/ZnS量子点的荧光淬灭程度(F/F0)与反应时间(t)呈线性关系,符合CdSe/ZnS量子点光催化降解动力学拟合方程,证明了荧光光谱法与传统吸光光度检测结果的一致性.建立了一种高效灵敏检测光催化降解荧光物质方法,有助于分析荧光物质的光催化降解机理,为光催化降解其它荧光物质的相关研究提供参考.     

Physical and Chemical Properties of TiOxNy Prepared by Low-Temperature Oxidation of Ultrathin Metal Nitride Directly Deposited on SiO2

Physical and chemical properties of titanium oxynitride （TiOxNy ） formed by low-temperature oxidation of titanium nitride （TIN） layer are investigated for advanced metal-oxide-semiconductor （MOS） gate dielectric application. TiOxNy exhibits polycrystalline properties after the standard thermal process for MOS device fabrication, showing the preferred orientation at [200]. Superior electrical properties of TiOxNy can be maintained before and after the annealing, probably due to the nitrogen incorporation in the oxide bulk and at the interface. Naturally formed transition layer between TiOxNy and SiO2 is also confirmed.