Single Crystal Si Layers on Glass Fabricated by Hydrophilic Fusion Bonding and Smart-Cut Technology

A single crystal Si thin film on a glass substrate has been obtained successfully by hydrophilic fusion bonding and the smart-cut technology. Tensile strength testing shows that the bonded interface has strong adhesion and the bonding strength is about 8.7MPa. Crystallinity and microstructure of the samples have been characterized by transmission electron microscopy (TEM). Electrical properties have also been investigated by Hall measurements and four-point probe. The mobility of the transferred Si layer on glass is about 122cm^2//V.s. The results show that the single-crystal silicon layer transferred onto glass by direct bonding keeps good quality for the applications of integrated circuits, transducers, and fiat panel display.     

纳米孔阵列阳极氧化铝膜的制备和表征

本文通过在0℃、0.5mol·L^-1的草酸溶液中阳极氧化高纯铝片的方法制得了阳极氧化铝(AAO)膜，并用扫描电子显微镜(SEM)和原子力显微镜(AFM)对AAO膜的形貌和结构进行了表征。结果表明，阻挡层AAO膜中大小一致的膜胞在铝/氧化铝界面上排成六方形阵列;有孔层AAO膜中含有高度有序的纳米孔阵列和膜胞阵列，并且孔的直径和膜胞的尺寸都具有较窄的分布。另外，考察了阳极氧化电压对膜胞尺寸、孔径大小、孔密度和膜胞密度的影响，表明在一定的电压范围内，膜胞和孔径都随电压的升高而增大，而孔密度和膜胞密度却随电压的升高而减小。