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氮化硼纳米片也被称为“白色石墨烯”,是一种重要的纳米填料,具有优异的机械性、导热性、耐磨性、阻隔性、疏水性,同时也是一种新兴的性能优良的绝缘材料.被广泛应用于重防腐涂层、润滑剂、传感器等领域.基于氮化硼纳米片在金属腐蚀防护领域巨大的应用前景,本综述将从氮化硼纳米片的制备及表面官能化、氮化硼薄膜防护涂层、氮化硼纳米片/有机防护涂层、氮化硼纳米片-无机复合材料/有机防护涂层这四部分进行系统总结,重点围绕氮化硼纳米片在有机涂层中均匀分散能力以及金属腐蚀防护能力等方面等进行详细分析和介绍,同时对氮化硼纳米片基防腐涂料未来发展进行了展望. 相似文献
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形象比教学具有简捷、具体、形象、生动的特点,运用形象比教学讲解珠算五升十进制规则,能使枯燥的理论生动起来,学生会在不知不觉中掌握珠算要领,在轻松愉快中学习珠算知识。 相似文献
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Nine novel triazole compounds containing ester group were designed and synthesized. Their structures were confirmed by elemental, ^1H NMR and IR analyses, and optimized by means of DFF (Density Functional Theory) method at the B3LYP/6-31G* level. Based on the quantum-chemical calculation results and the Pearson coefficients between FA and quantum- chemical parameters, V, LogP, MR and EHOMO are shown to be the important relative factors which affect FA of the title compounds. 相似文献
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Grain boundary plays a key role in electromigration process of polycrystal interconnection. We take a free volume to represent a 'vacancy--ion complex' as a function of grain boundary specific resistivity, and develop a new characterisation model for grain boundary noise. This model reveals the internal relation between the boundary scattering section and electromigration noise. Comparing the simulation result with our experimental result, we find the source as well as the form of noise change in the electromigration process. In order to describe the noise enhancement at grain boundary quantitatively, we propose a new parameter-grain boundary noise enhancement factor, which reflects that the grain boundary noise can characterise the electromigration damage sensitively. 相似文献
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地震波斜入射下自由场的输入是大型结构抗震分析中亟待解决的问题之一,尤其是成层饱和多孔介质自由场问题,由于问题的复杂性,目前研究甚少.本文基于Biot提出的饱和多孔介质动力方程,建立了一种新的求解平面波斜入射下基岩上覆饱和多孔介质成层场地自由场分析的一维化时域计算方法.该方法首先根据Snell定律将饱和多孔介质二维空间问题转化为一维时域问题,通过对深度方向的有限元离散,得到饱和多孔介质波动问题的一维化有限元方程,然后采用单相弹性介质精确人工边界条件模拟基岩半空间的波动辐射和输入特征,通过考虑基岩与饱和多孔介质间透水或不透水边界条件以及不同饱和多孔介质交界面边界条件,形成基岩上覆成层饱和介质系统的整体有限元方程,最后采用中心差分法与Newmark平均加速度近似格式相结合的方法对时间进行离散,得到节点的动力时程的显式表达.典型场地的地震反应分析表明,本文方法的计算结果与传递矩阵法结合傅里叶变换的计算结果完全吻合,证明了其有效性. 相似文献
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This paper presents an accurate analytical model of the random telegraph signal(RTS) noise time-constant ratio(τc/τe) for RTS noise in nano-MOSFETs,in which the Coulomb-blockade effect on trapping and detrapping processes was taken into account.Based on this new model,the depth of the trap responsible for RTS noise in a sample n-type nano-MOSFET is extracted.The results show that large errors will be introduced to the calculated trap depth when the Coulomb-blockade effect is neglected. 相似文献