Enhancement of ferromagnetic resonance in Al203-doped CozFeAI Heusler alloy film prepared by oblique sputtering

Large and variable in-plane uniaxial magnetic anisotropy in a nanocrystalline （Co2FeA1）97.8（Al2O3）2.2 soft magnetic thin film is obtained by an oblique sputtering method without being induced by magnetic field or post anneaiing. The in-plane uniaxiai magnetic anisotropy varies from 50 Oe to 180 Oe （1 Oe=79.5775 A·m-1） by adjusting the sample＇s position. As a result, the ferromagnetic resonance frequency of the film increases from 1.9 GHz to 3.75 GHz.     

Microwave ferromagnetic properties of as-deposited Co_2FeSi Heusler alloy films prepared by oblique sputtering

The Co2 FeSi films are deposited on Si(100) substrates by an oblique sputtering method at ambient temperature. It is revealed that the microwave ferromagnetic properties of Co2 FeSi films are sensitive to sample position and sputtering power. It is exciting that the as-deposited films without any magnetic annealing exhibit high in-plane uniaxial anisotropy fields in a range of 200 Oe–330 Oe(1 Oe = 79.5775 A·m-1), and low coercivities in a range of 5 Oe–28 Oe. As a result,high self-biased ferromagnetic resonance frequency up to 4.75 GHz is achieved in as-deposited oblique sputtered films.These results indicate that Co2 FeSi Heusler alloy films are promising in practical applications of RF/microwave devices.     

4-芳亚甲基-2-羟基-3-蒎酮类化合物的合成及其紫外吸收特征研究

以(-)-α-蒎烯为原料合成了系列新型4-芳亚甲基-2-羟基-3-蒎酮类化合物.(-)-α-蒎烯经选择性氧化得到(+)-2-羟基-3-蒎酮;在碱催化作用下,(+)-2-羟基-3-蒎酮与苯甲醛、对甲基苯甲醛、对甲氧基苯甲醛、对羟基苯甲醛、对氯苯甲醛、对硝基苯甲醛和糠醛等芳香醛缩合,得到系列光学活性4-芳亚甲基-2-羟基-3-蒎酮类化合物a～g.采用1H NMR,13C NMR,GC-MS和FT-IR等分析手段对合成所得4-芳亚甲基-2-羟基-3-蒎酮类化合物的结构进行了表征,考察了它们的紫外吸收特性及光稳定性.结果表明,化合物a,b,e对UVB具有良好的吸收性能;而化合物c,d,f,g兼具长波紫外线(UVA)和中波紫外线(UVB)的吸收性能.化合物a～g的光稳定性顺序为d>c>e>f>b>a>g.     

Enhancement of ferromagnetic resonance in Al_2O_3-doped Co_2FeAl Heusler alloy film prepared by oblique sputtering

Large and variable in-plane uniaxial magnetic anisotropy in a nanocrystalline(Co2FeAl)97.8(Al2O3)2.2soft magnetic thin film is obtained by an oblique sputtering method without being induced by magnetic field or post annealing. The in-plane uniaxial magnetic anisotropy varies from 50 Oe to 180 Oe(1 Oe = 79.5775 A·m-1) by adjusting the sample’s position. As a result, the ferromagnetic resonance frequency of the film increases from 1.9 GHz to 3.75 GHz.