高性能多级花状Co3O4基无酶葡萄糖电化学传感器

以硝酸钴、碳酸钠、尿素为原料,泡沫镍为基体,采用水热和煅烧相结合的二步法制备了一种多级花状Co_3O_4/Ni异质结构的无酶葡萄糖传感器。通过X射线衍射与扫描电镜对Co_3O_4/Ni电极的成分及形貌进行了表征,并采用循环伏安法在1mol/L KOH溶液中测试了Co_3O_4/Ni异质结构葡萄糖传感器电极的电化学性能。结果表明,通过二步法在泡沫镍表面制备的Co_3O_4呈现多级花状纳米纤维结构。将制备的Co_3O_4/Ni异质结构作为电极构建的无酶葡萄糖传感器表现出响应时间快(低于5s)、检测灵敏度高(7.4m A·(mmol/L)~(-1)·cm~(-2))、检出限低(1.17μmol/L,S/N=3)和线性检测范围宽(0~5 mmol/L)的特点。进一步的抗干扰性检测表明所制备的传感器在+0.44V vs.SCE对葡萄糖表现出良好的选择性。本文所制备的多级花状Co_3O_4基电极在无酶葡萄糖传感器的发展中有着很大的应用潜力。     

"高分子化学"课程有关概念和公式研究

高分子化学是研究聚合反应机理和聚合方法的一门科学,是高分子科学的基础。基本概念确切,公式应用的条件明确,有助于学生对基本概念和基本理论的深入理解,有助于高分子设计和高分子合成的科学研究。     

Temperature dependence of biaxial strain and its influence on phonon and band gap of GaN thin film

Hexagonal GaN epilayer grown on sapphire substrate by metal organic chemical vapour deposition (MOCVD) is studied using Raman scattering and photoluminescence in a temperature range from 100\,K to 873\,K. The model of strain (stress) induced by the different lattice parameters and thermal coefficients of epilayer and substrate as a function of temperature is set up. The frequency and the linewidth of $E_2^{\rm high}$ mode in a GaN layer are modelled by a theory with considering the thermal expansion of the lattice, a symmetric decay of the optical phonons, and the strain (stress) in the layer. The temperature-dependent energy shift of free exciton A is determined by using Varshni empirical relation, and the effect of strain (stress) is also investigated. We find that the strain in the film leads to a decreasing shift of the phonon frequency and an about 10meV-increasing shift of the energy in a temperature range from 100\,K to 823\,K.