等离子体聚合法修饰半导体光电极的研究——聚丙烯腈/n-GaAs,n-GaP电极

Polyacrylonitrile (PAN) film attached to n-GaAs, n-GaP photoelectrode surface by plasma polymerization has been studied. Both electrochemical behaviors and stability of the modified electrodes have been investigated. The results showed that the semiconductor electrodes with PAN film decreased photocorrosion in a certain degree, and their electrochemical characteristics and stability were improved remarkably after plasma doping. Cyclic voltammetric analysis demonstrated that the redox reaction occurred in I-PAN films could be carried out rapidly on electrode surfaces, in favor of the capture and transfer of photoinduced holes by the films to redox couples in solution.     

等离子体聚合法修饰半导体光电极的研究——聚丙烯腈/n-GaAs,n-GaP电极

用导电聚合物修饰光电化学体系中的半导体电极,对于抑制电极的光腐蚀、改善电极特性及赋予其催化功能有明显的效果.在制备聚合物薄膜的几种方法中,等离子体聚合可得到高度交联、均匀、化学稳定性好的超薄膜,且成膜工序简单,已引起重视并取得初步应用。等离子体聚合法修饰导体电极国内外均有报道,但在修饰半导体电极方面的研究甚少。本文探讨了用这种方法在n-GaAs、n-GaP电极上制备聚丙烯腈(PAN)薄膜,并进行