对单晶硅里双碳中心经退火后的光谱研究

对区熔和直拉单晶硅中双碳中心的热退火行为进行研究,并观测到新的硅光致发光谱线。这些谱线与硅中的碳、氧等点缺陷有关。实验已发现,双碳中心化学键断裂不是双碳中心退化的唯一原因,其他缺陷也会产生影响。我们认为双碳中心位于951.16(7671),952.98(7686),956.91meV(7717cm^-1的子带谱线是由于间隙硅原子而不是由空位造成的。     

THE INFLUENCE OF ELECTRON OSCILLATION ON PLASMA TRANSPORT THROUGH A MAGNETIC DUCT

A magnetic duct is inserted between the cathodic arc plasma source and the chamber to eliminate the macroparticles. In this paper, the plasma output of the magnetic duct is determined as a function of the magnetic field and the bias voltage under the Bilek biasing mode and entire duct biasing mode. The computer simulation and the experimental result indicate that the ${\vec E}\times{\vec B}$ drift results in an extra diffusion flux under the Bilek biasing mode. The test verifying the electron oscillation was conducted in the magnetic duct biased in the Bilek mode. The electron behaviour under Bilek biasing mode is different from that under entire duct biasing mode. The Bilek biasing mode has a lower plasma output than the entire duct biasing mode.