| 对单晶硅里双碳中心经退火后的光谱研究 |
| |
| 引用本文： | 郭达勤,亓文杰.对单晶硅里双碳中心经退火后的光谱研究[J].物理学报,1996,45(6):995-1002. |
| |
| 作者姓名： | 郭达勤 亓文杰 |
| |
| 作者单位： | 复旦大学应用表面物理国家重点实验室,上海200433;香港科技大学物理系,香港九龙清水湾道;复旦大学电子工程系,上海200433 |
| |
| 摘 要： | 对区熔和直拉单晶硅中双碳中心的热退火行为进行研究,并观测到新的硅光致发光谱线。这些谱线与硅中的碳、氧等点缺陷有关。实验已发现,双碳中心化学键断裂不是双碳中心退化的唯一原因,其他缺陷也会产生影响。我们认为双碳中心位于951.16(7671),952.98(7686),956.91meV(7717cm-1的子带谱线是由于间隙硅原子而不是由空位造成的。
|
| 关 键 词： | 单晶 硅 双碳中心 退火 光谱研究 |
| 收稿时间： | 1995-02-21 |
| 修稿时间： | 7/3/1995 12:00:00 AM |
OPTICAL SPECTRA OF DI-CARBON CENTER AFTER ANNEALING IN SILICON MONOCRYSTAL |
| |
| GUO DA-QIN and QI WEN-JIE.OPTICAL SPECTRA OF DI-CARBON CENTER AFTER ANNEALING IN SILICON MONOCRYSTAL[J].Acta Physica Sinica,1996,45(6):995-1002. |
| |
| Authors: | GUO DA-QIN and QI WEN-JIE |
| |
| Abstract: | We've investigated the annealing behaviour of the di-carbon centre (zero-phonon line at 969 meV or 7818 cm-1)in float zone and Czochralski silicon crystals. The break-up process is not the only way to destroy the di-carbon centres and it is shown that the presence of other defects may affect the annealing process. After the thermal destruction of the di-carbon centre, we've discovered many previously unreported carbon and oxygen related point defects. Their photolumiescence lines are observed. We suggest that the interstitial silicon atom is the defect trapped near but not ‘at' the di-carbon centre forming the satellite sublines at 951.16(7671), 952.98(7686), and 956.91meV (7717cm-1). |
| |
| Keywords: | |
| 本文献已被 CNKI 维普 等数据库收录！ |
| 点击此处可从《物理学报》浏览原始摘要信息 |
| 点击此处可从《物理学报》下载免费的PDF全文 |
|
