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1.
The Vilsmeier formylation of 2-phenyl- and 3-phenyl-5-hydroxybenzofuran derivatives was studied. It is shown that 2-phenyl-5-methoxybenzofuran is formylated in the 4 position, whereas 3-phenyl-5-methoxybenzofuran is formylated in the 2 position.Translated from Khimiya Geterotsiklicheskikh Soedinenii, No. 8, pp. 1023–1024, August, 1976. 相似文献
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We report our results on effective third-harmonic generation (THG) by cascading quasi-phase-matched second-harmonic and sum-frequency generation in a dual-period-periodically-poled KTP crystal. Significant improvement of the output powers were achieved for the 440 nm blue light and 660 nm red light based on Q-switched frequency-tripling and frequency-doubling 1319-nm radiation inside an adhesive-free bond composite Nd:YAG laser. The highest output powers of 197 mW and 1.19 W were achieved for the blue and red light at the corresponding input powers of 12.9 and 17.1 W for the diode laser. 相似文献
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By stacking alternatively rotated gallium phosphide (GaP) plates, the maximum photon conversion efficiency of 40% for the terahertz (THz) generation based on difference-frequency generation has been achieved. The corresponding peak power generated inside the four GaP plates approaches 4 kW. As the number of plates is increased from four to five, the THz output power is significantly decreased, due to back parametric conversion. 相似文献
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A. G. Reutova M. R. Ul’maskulov A. K. Sharypov V. G. Shpak S. A. Shunailov M. I. Yalandin V. I. Belousov N. S. Ginzburg G. G. Denisov I. V. Zotova R. M. Rozental’ A. S. Sergeev 《JETP Letters》2005,82(5):263-266
The generation of ultrashort superradiant pulses in the stimulated scattering of an intense microwave (38 GHz) pump wave by a counterpropagating high-current relativistic electron bunch has been observed. Scattered radiation is a single ~200-ps pulse with a peak power of about 1 MW. Owing to the Doppler shift of the radiation frequency, frequencies up to 150 GHz are present in the spectrum of the scattered pulse. 相似文献
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T. A. Zeveke T. S. Babushkina L. E. Nikolaeva R. A. Rubtsova N. V. Gudkova L. N. Abrosimova V. A. Tolomasov T. M. Zotova 《Russian Physics Journal》1984,27(11):971-973
The dependence of the structure of epitaxial GaAs layers grown in the OM-hydride process on the growth temperature, the composition of the steam-gas mixture, and the preparation of the substrate surface is investigated. It is shown that the growth temperature together with the composition of the steam-gas mixture have a considerable effect on the degree of structural perfection of the epitaxial GaAs layers.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 11, pp. 69–71, November, 1984. 相似文献
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