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Dou SX Shcherbakova O Yeoh WK Yoeh WK Kim JH Soltanian S Wang XL Senatore C Flukiger R Dhalle M Husnjak O Babic E 《Physical review letters》2007,98(9):097002
A comparative study of pure, SiC, and C doped MgB2 wires has revealed that the SiC doping allowed C substitution and MgB2 formation to take place simultaneously at low temperatures. C substitution enhances H_{c2}, while the defects, small grain size, and nanoinclusions induced by C incorporation and low-temperature processing are responsible for the improvement in J_{c}. The irreversibility field (H_{irr}) for the SiC doped sample reached the benchmarking value of 10 T at 20 K, exceeding that of NbTi at 4.2 K. This dual reaction model also enables us to predict desirable dopants for enhancing the performance properties of MgB2. 相似文献
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Schief WK; Rogers C; Murugesh S 《The Quarterly Journal of Mechanics and Applied Mathematics》2007,60(1):49-64
Evolution of foliations of the plane is shown, under a conditionof constant divergence, to be linked to the scattering problemfor the integrable modified Kortewegde Vries hierarchy.This result is applied to a set of kinematic relations whicharise in the theory of ideal fibre-reinforced fluids. In particular,it is established that the fibres, which are convected withthe fluid, constitute generalized tractrices. 相似文献
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