The study of the influence of uniaxial stress on impurity complexes in silicon

The influence of external uniaxial stress on the different indium-donor complexes in silicon has been studied using the perturbed γ –γ angular correlation (PAC) method. Such effect of an applied stress is detected by means of the probe atoms situated at different complexes in the sample. The current results showed that the responses of the probes in an extrinsic silicon samples are found to be dissimilar for the same value of stress. Such change in the local environments of the probe atoms could be associated with the various strain field created by the implantations of varied size of impurities. The phosphorous implantation in silicon has even lead to the complete absence of observable effect of the applied stress suggesting significant lose of the elasticity of the sample.     

The temperature dependence of the quadrupole interaction of100Rh in a Zn lattice

The¹⁰⁰Pd radioactivity was implanted into a pure Zn host with the help of an isotope separator. The temperature dependence of the quadrupole interaction was studied by time-differential measurements of the 84 keVγ- 75 keVK-conversion angular correlation. We conclude that electrons contribute significantly to the electric field gradient at the Rh site, but that local effects due to the 4d electrons of Rh are probably small.     

Temperature dependence of the electric field gradient in GaN measured with the PAC-probe 181Hf

A radial inhomogeneous magnetic field produced by counter-propagating currents in anti-Helmholtz configuration coils has been superimposed to a Penning trap. The confinement properties of electrons in such a trap have been studied experimentally. Without the radial B-field we find a number of operating conditions where instabilities occur, arising from higher order contributions to the quadrupolar trapping field. When we apply the radial field the trap properties remain essentially unchanged until the strength of this field at the boundary of the electron cloud is of the same order as the homogeneous Penning field. Then a sudden breakdown in the confinement appears. The experiments have been performed in low magnetic fields. The equations of motions of the trapped particles can be cast in a dimensionless form and our results can be considered as independent of the field strength. Contribution was presented at the TCP06, Vancouver Island, 2006.     

Electric field gradient in nanostructured SnO2 studied by means of PAC spectroscopy using 111Cd or 181Ta as probe nuclei

Electric quadrupole interactions were studied in pure and Mn-doped powder samples and thin films of SnO₂ using perturbed γγ angular correlation spectroscopy (PAC). The powder samples were prepared by Sol gel method and the thin film were prepared on the Si (100) substrate by sputtering technique using Sn in the oxygen atmosphere. The samples were characterized by x-ray diffraction, energy dispersive spectroscopy and scanning electron microscopy. The thickness of the film was 100 nm. The average particle size of the SnO₂ powder samples was determined to be smaller than 60 nm. The radioactive ¹¹¹In and ¹⁸¹Hf tracers were introduced in the powder samples during the sol gel chemical process. Radioactive ¹¹¹In was implanted on the SnO₂ thin films using the University of Bonn ion implanter (BONIS). PAC measurements were carried out in a four BaF₂ detector spectrometer in the temperature range of 77–973 K for samples annealed at different temperatures. The PAC results for both nuclear probes show the presence of two electric quadrupole interactions. The major fractions in both cases correspond to the substitutional sites in the rutile phase of SnO₂. The results are compared with previous PAC measurements.     

Cavity formation at indium impurities in bcc metals

The defect formation in the bcc metals W and Mo above annealing stage III and the influence of rare gases on this process were investigated by means of the perturbed angular correlation technique using¹¹¹In as radioactive probe. In both metals a relatively high electric field gradient (EFG) could be observed at the indium site, characterized by the quadrupole interaction frequencies υ_Q=263 MHz, ν=0 and υ_Q=220 MHz, ν≈0.15 for W and Mo, respectively. The observations are assigned to the growth of threedimensional vacancy clusters at the probe atoms with the indium atoms situated in the inner surface of this cavities, thus experiencing the corresponding surface EFG.     

The electric field gradient and its temperature dependence for ruthenium in scandium and yttrium

The electric field gradients (EFG) for ruthenium in scandium and yttrium metal were determined by TDPAC measurements to be 19(4) × 10¹⁷ V/cm² and 5.5(12) × 10¹⁷ V/cm² respectively at room temperature. The EFG for Ru in Sc was found to vary considerably in the temperature range from 14 to 700 K, whereas for Ru in Y only an extremely small temperature dependence of the EFG was observed.     

Systematics of electric field gradients in metals

The intensive study of electric field gradients (EFG) at the site of atomic nuclei in noncubic metals has revealed several systematic trends, e.g. in the relation of the total EFG to the so called lattice EFG as well as in its variation with temperature. Numerous investigations have been carried out in order to test these systematics. The results will be reviewed and compared to the known trends. Progress in theoretical calculations of the EFG in pure and impurity — host systems will be discussed and compared to the latest available experimental data. Recent measurements of the EFG at metal surfaces and new calculations of the EFG at host sites in impure cubic metals may contribute to the understanding of the EFG in metals.     

The electric quadrupole interaction of the 134 keV state of197Hg in the metal hosts Cd,Zn, Sn and Ti studied by e−-γ TDPAC measurements

The electric quadrupole coupling constants of the lowest excited 5/2^? state in¹⁹⁷Hg have been measured by the e^?-γ TDPAC method for the hosts Ti and Sn at room temperature and for Zn and Cd at various temperatures. The observed temperature dependences are approximately the same as those known for other impurities in the same host lattices. They are well described by a simpleT ^3/2 relation.