Electric quadrupole interactions in nano-structured SnO 2 as measured with PAC spectroscopy

Measurements of the electric quadrupole interaction were used to characterize pure and cobalt-doped samples of SnO₂ prepared by the sol-gel method. Perturbed gamma–gamma angular correlation (PAC) spectroscopy using ¹¹¹In–¹¹¹Cd probe nuclei was employed for these measurements. A methodology was developed for sample preparation that were prepared by sol-gel method from pure metallic Sn (99.9999%) and Co (99.9998%) as starting materials. Carrier-free ¹¹¹In was added to the precursor sol-gel solution prior to the formation of gel. PAC measurements were carried out to follow the formation of the SnO₂. PAC measurements were carried out in the temperature range from 10 k to 1123 K and the results show that the electric quadrupole frequency depends on the annealing temperature.     

Magnetic behaviour and DCEMS study of SnO2 films implanted with 57Fe

Fe implanted SnO₂ films (5 × 10¹⁶ and 1 × 10^{17 57}Fe ions/cm²) characterized by conversion electron Mossbauer spectroscopy (CEMS) are reviewed. The substrate temperatures affect the growth of precipitated iron oxides. The Fe ion implanted film at room temperature (RT) shows no Kerr effect and no magnetic sextet in CEM spectra. The SnO₂ film implanted with ⁵⁷Fe at the substrate temperature of 300 °C show a small Kerr effect although the magnetic sextet is not observed, but post-annealing results in the disappearance of the Kerr effect. This magnetism is considered to be due to defect induced magnetism. Some samples were measured by CEMS at 15 K. SnO₂ (0.1 at %Sb and 3 at %Sb) films, implanted at 500 °C and the post-annealed samples, show RT ferromagnetism due to formation of clusters of magnetite and maghemite, respectively. The layer by layer analysis of these films within 100 nm in thickness has been done by depth sensitive CEMS (DCEMS) using a He + 5 % CH₄ gas counter. The structures and compositions of Fe implanted SnO₂ films, and the effects due to post-annealing were investigated.     

Electrical properties of Sb-doped epitaxial SnO2 thin films prepared using excimer-laser-assisted metal–organic deposition

Excimer-laser-assisted metal–organic deposition (ELAMOD) was used to prepare Sb-doped epitaxial (001) SnO₂ thin films on (001) TiO₂ substrates at room temperature. The effects of laser fluence, the number of shots with the laser, and Sb content on the electrical properties such as resistivity, carrier concentration, and carrier mobility of the films were investigated. The resistivity of the Sb-doped epitaxial (001) SnO₂ thin film prepared using an ArF laser was lower than that of the film prepared using a KrF laser. The van der Pauw method was used to measure the resistivity, carrier concentration, and carrier mobility of the Sb-doped epitaxial (001) SnO₂ thin films in order to determine the effect of Sb content on the electrical resistivity of the films. The lowest resistivity obtained for the Sb-doped epitaxial (001) SnO₂ thin films prepared using ELAMOD with the ArF laser and 2 % Sb content was 2.5 × 10^?3 Ω cm. The difference between the optimal Sb concentrations and resistivities of the films produced using either ELAMOD or conventional thermal MOD was discussed.     

Volume of precursor solution effect on the properties of SnO<Subscript>2</Subscript> thin films prepared by nebulized spray pyrolysis technique

Undoped SnO₂ thin films have been deposited on amorphous glass substrates with different precursor solution volume (10, 15, 20 and 25 ml) using simple and cost-effective nebulized spray pyrolysis technique. The influence of precursor solution on structural, optical, photoluminescence and electrical properties had been studied. The X-ray diffraction spectra prove the polycrystalline nature of SnO₂ with tetragonal structure. All the films show a preferred growth orientation along (110) diffraction plane. The average transmittance of SnO₂ thin films varied between 82 and 75% in the visible as well as IR region. The band gap energy decreases from 3.74 to 3.64 eV corresponding to direct transitions with the precursor solution volume had increased from 10 to 20 ml and then increased as 3.72 eV for 25 ml. SEM pictures demonstrated polyhedrons like grains. EDX confirmed the existence of Sn and O elements in all the prepared SnO₂ thin films. Photoluminescence spectra at room temperature revealed that the four emission bands in all the samples such as sharp dominant peak at 361 nm with shoulder peak at 377 nm (UV region), a broad and low intensity peak at 492 nm (blue region) and 519 nm (green region). The electrical parameters were examined by Hall effect measurements, which demonstrated that the film prepared at 20 ml precursor solution volume possess minimum resistivity 2.76?×?10^?3 Ω-cm with activation energy 0.10 eV and maximum figure of merit 1.54?×?10^?2 (Ω/sq)^?1.     

Study of hyperfine interactions in the intermetallic compound CePd2Si2 using PAC technique with 111Cd as probe nuclei

Perturbed γ???γ angular correlation spectroscopy (PAC) has been used to investigate the hyperfine interactions in the intermetallic compound CePd₂Si₂ using ¹¹¹In→¹¹¹Cd probe nuclei. Samples of CePd₂Si₂ were prepared by melting constituent elements in an arc furnace under pure argon atmosphere. Carrier-free ¹¹¹In nuclei were introduced into the samples by thermal diffusion at 800°C in vacuum during 12 h. The measurements were performed in the temperature range of 4.2–300 K. Above the magnetic transition temperature (T _N ?=?10 K), the results show two distinct and well defined quadrupole interactions that were assigned to probe nuclei occupying Ce and Si sites in the compound. The quadrupole frequencies were found to decrease linearly with increasing temperature. The PAC spectra taken below 10 K were analyzed with a model including combined electric quadrupole plus magnetic dipole interactions, from which the hyperfine magnetic field was determined.     

TDPAC characterization of tin oxides using181Ta

In connection with a general study of the evolution of tin-oxygen thin films, we report here on the hyperfine interactions of¹⁸¹Ta substitutionally replacting tin in the isolated phases SnO and SnO₂. For this purpose, pure SnO pressed powder and a thin SnO₂ film were implanted with¹⁸¹Hf. In both cases, unique quadrupole frequencies were found after thermal annealing treatments. The results indicate that the following hyperfine parameters: υ _Q = 740.6(2.1) MHz, η=0.07(2) and υ _Q = 971.5(1.9) MHz, η=0.72(1) characterize¹⁸¹Ta in SnO and SnO₂, respectively.     

W doped SnO2 growth via sol–gel routes and characterization: Nanocubes

The effects of W doping on the characteristical properties of SnO₂ thin films prepared by sol–gel spin coating method were investigated. The SnO₂ thin films were deposited at various W doping ratios and characterized by various measurements. XRD studies indicated that the undoped and W doped SnO₂ films had cubic and tetragonal phases. The SEM images of WTO thin films showed cubic shaped nanocubes corresponding to cubic phase and the smaller particles corresponding to tetragonal phase were formed on the film surfaces, and their distributions and sizes were dependent on the W doping ratio. EDX spectroscopy analyses showed that the calculated and participated atomic ratios of W/(W + Sn) (at.%) in the starting solution and in the WTO thin films were almost close. It was found that the sheet resistance depended on W doping ratio and 2.0 at.% W doped SnO₂ (WTO) exhibited lowest value of sheet resistance (7.11 × 10³ Ω/cm²).     

Nanocrystalline ZnO Film Grown on Porous SnO2/Si(111) Substrate

Porous tin oxide was prepared on silicon(111) substrate by the sol–gel route. Then, the samples were dried in air at 600°C for 30 min in an electric furnace. Scanning electron microscope (SEM) images indicated the high density of the pores. Circular microvoids formed by the rigid shaped microarray network of 200–300 nm sizes are clearly seen in the plan view SEM image. The high homogeneity and uniformity of the porous region could also be visualized by this easy method. Nanocrystalline zinc oxide (ZnO) thin films have been deposited onto porous SnO₂substrates at high growth rates by radio frequency (RF) sputtering using a ZnO target. The surface morphology of the nanocrystalline ZnO films was characterized by scanning electron microscope (SEM). Photoluminescence (PL) spectroscopy is a powerful, contactless and excellent nondestructive optical tool to study the acceptor binding energy of ZnO nanostructures. The PL measurements were also operated at room temperature. The peak luminescence energy in nanocrystalline ZnO on porous SnO₂ is blue-shifted with regard to that in bulk ZnO (381 nm). PL spectra peaks are distinctly apparent at 375 nm for ZnO film grown on porous SnO₂/Si(111) substrates.     

Optical parameters in SnO2 nanocrystalline textured films grown on p-InSb (111) substrates

Spectroscopic ellipsometry and photoluminescence (PL) measurements on SnO₂ nanocrystalline textured films grown on p-InSb (111) substrates by using radio-frequency magnetron sputtering at low temperature were carried out to investigate the dependence of the optical parameters on the SnO₂ thin film thickness. As the SnO₂ film thickness increases, while the energy gap of the SnO₂ film decreases, its refractive index increases. The PL spectra show that the broad peaks corresponding to the donor-acceptor pair transitions are dominant and that the peak positions change with the SnO₂ film thickness. These results can help improve understanding for the application of SnO₂ nanocrystalline thin films grown on p-InSb (111) substrates in potential optoelectronic devices based on InSb substrates.     

Investigation of hyperfine interactions in GdCrO3 perovskite oxide using PAC spectroscopy

Perturbed angular correlation (PAC) measurements have been carried out in the antiferromagnetic GdCrO₃ perovskite oxide using ¹¹¹In (¹¹¹Cd) and ¹⁸¹Hf(¹⁸¹Ta) nuclear probes. The radioactive parent nuclei ¹¹¹In and ¹⁸¹Hf were introduced in the compound through a chemical process during sample preparation. The PAC measurements were carried out in the temperature range 20–300 K. Measurements with the ¹⁸¹Ta indicated a unique quadrupole interaction above 170 K and a combined electric quadrupole and magnetic dipole interactions below this temperature. The observed interaction was assigned to the probe nuclei substituting Cr sites. Measurements with ¹¹¹Cd showed two quadrupole interactions. Only one of the fractions however, showed a combined electric and magnetic interaction in the temperature rage 20–170 K which was assigned to ¹¹¹Cd probe substituting Cr site. The other fraction was attributed to the Gd site. The present results are compared with those of LaCrO₃ and NdCrO₃.     

Effect of Al doping on structural,optical and electrical properties of SnO2 thin films synthesized by pulsed laser deposition

Aluminium-doped (Al = 0–5?wt.%) SnO₂ thin films with low-electrical resistivity and high optical transparency have been successfully synthesized by pulsed laser deposition technique at 500 °C. Structural, optical and electrical properties of the as-deposited and post-annealed thin films were investigated. X-ray diffraction patterns suggest that the films transform from crystalline to amorphous state with increasing aluminium content. The root mean square (R_q) surface roughness parameter, determined by atomic force microscopy decreases upon annealing of the as-deposited film. While resistivity of the film is the lowest (9.49 × 10^?4 Ω-cm) at a critical doping level of 1?wt.% Al, optical transparency is the highest (nearly 90%) in the as-deposited condition. Temperature dependence of the electrical resistivity suggests that the Mott’s variable range hopping process is the dominant carrier transport mechanism in the lower temperature range (40–135 K) for all the films whereas, thermally activated band conduction mechanism seems to account for conduction in the higher temperature region (200–300 K).     

Perturbed angular correlation study of a nanostructured HfO2 film

The hyperfine field at ¹⁸¹Ta lattice sites in a nanostructured HfO₂ thin film was studied by the perturbed angular correlation (PAC) technique. The thin oxide film was deposited by pulsed laser ablation on a silicon substrate kept at 673 K. The thickness was about 25 nm. The radioactive ¹⁸¹Hf ions were produced by neutron activation of the very thin film in the Portuguese research reactor by the reaction ¹⁸⁰Hf(n,γ)¹⁸¹Hf. PAC measurements were carried out at room temperature after annealing at different temperatures up to 1,473 K in air. The PAC technique allows determining the electric field gradient at the ¹⁸¹Ta probe sites. The ¹⁸¹Ta isotopes appear in the sample as disintegration product of ¹⁸¹Hf.     

氧氩比对SnO2/Ag/SnO2透明导电膜光电性能的影响

在室温及不同的氧氩比条件下,采用射频磁控溅射Ag层和直流磁控溅射SnO₂层,在载玻片衬底上制备出了SnO₂/Ag/SnO₂多层薄膜.用霍尔效应测试仪、四探针电阻测试仪和紫外-可见-近红外光谱仪等表征了薄膜的电学性质和光学性质.实验结果表明:当氧氩比为1:14时,所制得的薄膜的光电性质优良指数最大,为1.69×10^-2 Ω^-1;此时,薄膜的电阻率为9.8×10^-5 Ω·cm,方电阻为9.68 Ω/sq,在400~800 nm可见光区的平均光学透射率达85%;并且,在氧氩比为1:14时,利用射频磁控溅射Ag层和直流磁控溅射SnO₂层在PET柔性衬底上制备出了光电性质优良的柔性透明导电膜,其在可见光区的平均光学透过率达85%以上,电阻率为1.22×10^-4 Ωcm,方电阻为12.05 Ω/sq.     

Chemical synthesis of nanocrystalline SnO2 thin films for supercapacitor application

Nanocrystalline SnO₂ thin films were deposited by simple and inexpensive chemical route. The films were characterized for their structural, morphological, wettability and electrochemical properties using X-ray diffraction (XRD), Fourier transform infrared spectroscopy (FT-IR), scanning electron microscopy techniques (SEM), transmission electron microscopy (TEM), contact angle measurement, and cyclic voltammetry techniques. The XRD study revealed the deposited films were nanocrystalline with tetragonal rutile structure of SnO₂. The FT-IR studies confirmed the formation of SnO₂ with the characteristic vibrational mode of Sn-O. The SEM studies showed formation of loosely connected agglomerates with average size of 5-10 nm as observed from TEM studies. The surface wettability showed the hydrophilic nature of SnO₂ thin film (water contact angle 9°). The SnO₂ showed a maximum specific capacitance of 66 F g⁻¹ in 0.5 Na₂SO₄ electrolyte at 10 mV s⁻¹ scan rate.     

Effect of deposition time on structural and physical properties of Cu<Subscript>2</Subscript>CdSnS<Subscript>4</Subscript> thin films prepared by spray pyrolysis technique: experimental and ab initio study

Cu₂CdSnS₄ (CCdTS) thin films were synthesized using chemical spray pyrolysis deposition technique. The effect of various deposition times (20, 40, 60 min) on growth of these films was investigated. The as-synthesized Cu₂CdSnS₄ thin films were characterized by X-ray diffraction (XRD), ultraviolet–visible (UV–Vis) spectroscopy, Raman spectroscopy and Hall Effect measurements. The XRD pattern of Cu₂CdSnS₄ structured in stannite phase with preferential orientations along (112) planes. Raman spectrum revealed very strong peak at about 333 cm^?1. The films have the direct optical band gaps of 1.39–1.5 eV. The optimum hole mobility was found to be 3.212 × 10¹ cm² v^?1 s^?1 for the film deposited on 60 min. The electronic structure and optical properties of the stannite structure Cu₂CdSnS₄ were obtained by ab initio calculations using the Korringa–Kohn–Rostoker method combined with the Coherent Potential Approximation (CPA), as well as CPA confirms our results.     

Growth and melting behaviour of thin in films on Ge(100)

Growth and melting behaviour of thin indium films on Ge(100) have been investigated by Auger-electron spectroscopy (AES), atomic force microscopy (AFM) and perturbed angular correlation (PAC) spectroscopy, respectively. At room temperature inidium is found to grow in three-dimensional islands even at submonolayer coverages. A very rough film surface is observed for thicknesses up to 230 ML. The melting behaviour of such films has been studied by PAC. A reduction of the melting temperature T _m as well as a strong supercooling of the films is observed. The electric field gradient for ¹¹¹In(¹¹¹Cd) in the indium islands is determined as a function of temperature and is used to monitor the local crystalline order of the films up to temperatures just below the melting point.     

Absence of room temperature ferromagnetism in transition metal doped ZnO nanocrystalline powders from PAC spectroscopy

Local structural and electronic environment around ¹¹¹In probe atoms in transition metal doped Zn_1???xT_xO (T=Mn, Co, V and Ni; x = 0.01, 0.02, 0.05) and Cu co-doped Zn_1???xCo_xCu_0.01O (x = 0.01–0.04) have been monitored on an atomic scale by Perturbed Angular Correlation (PAC) spectroscopy. Single phase nanocrystalline powders were synthesized at low annealing temperatures by sol-gel method. PAC measurements exhibited the well known quadrupole interaction frequency, $\upnu_{\rm Q} =$ 31 MHz, which have been attributed to the substitutional incorporation of ¹¹¹In in ZnO matrix. PAC results did not reveal any evidence of magnetic ordering down to 77 K in pure and doped ZnO, which is consistent with the recent observation of paramagnetic behavior in transition metal doped ZnO with synchrotron based studies.     

Hyperfine interactions of 111Cd in TiO2 (Rutile) studied by perturbed angular correlations

The time-differential perturbed angular correlation for ¹¹¹Cd nuclei has been measured after ¹¹¹In implantation into polycrystalline TiO₂. The observed perturbation functions are characterized by a well-defined electric field gradient with the quadrupole coupling constant ν_Q = 105(1) MHz and the asymmetry parameter η = 0.18(1). We attribute these hyperfine parameters to ¹¹¹Cd on the (distorted) substitutional cation site in rutile. The PAC results are compared with those in SnO₂ rutile as well as with X-ray diffraction, RBS channeling experiments and point charge model calculations including relaxation of the probe atom surrounding.     

Synthesis and characterization of tin oxide (SnO2) nanocrystalline powders by a simple modified sol–gel route

This paper reports the synthesis and characterization of nanocrystalline tin oxide (SnO₂) powders by a simple method using a chitosan–polymer complex solution. To obtain SnO₂ nanocrystalline powders, the precursor was calcined at 500–600 °C in air for 2 h. The phase composition of calcined samples was studied by X-ray diffraction (XRD). The XRD results confirmed the formation of a SnO₂ phase with tetragonal structure. The particle sizes of the powder were found to be 22–23 nm as evaluated by the XRD line broadening method. TEM investigation revealed that the SnO₂ samples consist of crystalline particles of 19–21 nm. The corresponding selected area electron diffraction analysis further confirmed the formation of the tetragonal structure of SnO₂ without any impurity phases. The optical properties of the samples were explored by Fourier transform infrared spectroscopy, optical absorption and Raman studies. The estimated band gaps of the samples were in the range of 3.44–3.73 eV.     

Starch-based gel electrolyte thin films derived from native sago (Metroxylon sagu) starch

Starch-based gel electrolyte (SbGE) thin films were prepared by mixing native sago starch with different amounts of glycerol, and subsequently doped with various types of ionic salts. SbGE thin films showed substantially enhanced mechanical properties and ionic conductivity through incorporating optimal composition of native sago starch, glycerol, and ionic salts. A maximum room temperature ionic conductivity of the order of 10^?3 S cm^?1 was achieved for optimized SbGE thin film consisting of 80 wt% of native sago starch and 20 wt% of glycerol, and doped with 8 wt% of LiCl. SbGE thin films were characterized by Fourier transformed infrared spectrometry, scanning electron microscopy, and electrochemical impedance spectroscopy. Due to their favorable mechanical properties, high ionic conductivity at room temperature, ease of preparation, environmentally benign, and cheap, SbGE thin films show high potential utility as gel electrolyte materials for the fabrication of solid-state electrochemical devices.