10-GHz Optical Comb in L-Band Region With Brillouin/Erbium-Doped Fibre Laser

A multiwavelength Brillouin/erbium fibre laser (BEFL) which operates in the long wavelength (L-band) region is demonstrated for potential applications in an L-band wavelength division multiplexing (WDM) communication system. The laser configuration consists of a long erbium-doped fibre to enable L-band amplification where two 3-dB couplers take a portion of the generated BEFL signal and re-inject it into the single mode fibre to seed a cascaded BEFL line in the same direction as the first BEFL line. A stable and strong laser comb of up to five lines with 10-GHz spacing has been obtained with a Brillouin pump (BP) of 9.2 mW and a 980 nm pump of 92 mW. The BEFL has shown a broad tuning range with a tuning characteristic for line #1 which is flat over a range greater than 9.9 nm.     

Differential pulse polarographic determination of some organotin(IV) compounds in dimethyl sulfoxide

The differential pulse polarographic behavior of two series of organotin(IV) compounds having the general formula R_xSnCl_{4 − x} (R = Me, Ph; x = 1, 2, 3, 4) has been investigated in DMSO. The peaks obtained are recommended for the trace determination of these compounds. Linear calibration curves are obtained over the concentration range 10⁻⁴ –10⁻⁶ M.     

Switchable Q-switched and laser operating mode-locked erbium-doped fiber in the L-band region

We demonstrate a switchable Q-switched and mode-locked erbium-doped fiber laser （EDFL） operating in the L-band region using the nonlinear polarization rotation effect. The switching operation is achieved by controlling intensity-dependent loss using a polarization controller. In Q-switching mode, the EDFL produces a pulse train with a repetition rate of 21.1 kHz, pulse width of 7.7 #s, and pulse energy of 13.6 nJ. The EDFL also generates a multi-wavelength comb with a very narrow and constant wavelength spacing of 0.045 nm and optical signal-to-noise ratio of at least l0 dB. During mode locking, the EDFL produces stretched pulses with 3-dB bandwidth of 26.2 nm, pulse width of 350 fs, repetition rate of 2.38 MHz, and pulse energy of 48.56 pJ.     

Novel phenothiazine-based chalcone derivatives with various N-substituted rhodanines induce growth inhibition followed by apoptosis in leukemia cells

Research on Chemical Intermediates - Eight new series of novel phenothiazine-based chalcone derivatives with various N-substituted rhodanines (10a–g to 17a–g) were synthesized by...     

Temperature dependence of turn-on time delay of semiconductor laser diode: Theoretical analysis

Temperature dependence of the turn-on time delay (t_on) of uncooled semiconductor laser diodes biased below and above threshold is analyzed in presence of data pattern effect. We show that even when the laser is biased at or slightly above threshold, the increase in temperature of operation will lead to increase in the threshold carrier (N_th) and consequently the laser diode will be biased below the threshold again and a significant value of t_on will be produced. Thus, knowledge about a value of dc-bias current required to achieve zero t_on within wide range of temperature degrees is important when considering uncooled laser diode in high-speed optical communication systems. The temperature dependence of t_on is calculated according to the temperature dependence of N_th and Auger recombination coefficient (C) and not by the well-know exponentional relationship of threshold current with temperature. The temperature dependence of N_th is calculated according to the temperature dependence of laser cavity parameters. Advanced analytical model is derived in term of carrier density, recombination coefficients and the injection current (I_inj). The validity of proposed model is confirmed by a numerical method. In addition, approximated models are included where under specified assumptions the proposed model reduces to the well-known approximate models of t_on. According to our typical values and at a specified value of modulation current, the dc-bias one (I_ib) should be increased from I_ib = I_th to I_ib ≈ 1.25 and 1.5I_th in order to achieve approximately zero t_on when the temperature increases from 25°C to 55°C and 85°C, respectively.     

Sensitive voltammetric determination of paracetamol by poly (4-vinylpyridine)/multiwalled carbon nanotubes modified glassy carbon electrode

A novel glassy carbon electrode (GCE) modified with a composite film of poly (4-vinylpyridine) (P4VP) and multiwalled carbon nanotubes (P4VP/MWCNT GCE) was used for the voltammetric determination of paracetamol (PCT). This novel electrode displayed a combined effect of P4VP and MWCNT on the electro-oxidation of PCT in a solution of phosphate buffer at pH 7. Hence, conducting properties of P4VP along with the remarkable physical properties of MWCNTs might have combined effects in enhancing the kinetics of PCT oxidation. The P4VP/MWCNT GCE has also demonstrated excellent electrochemical activity toward PCT oxidation compared to that with bare GCE and MWCNT GCE. The anodic peak currents of PCT on the P4VP/MWCNT GCE were about 300 fold higher than that of the non-modified electrodes. By applying differential pulse voltammetry technique under optimized experimental conditions, a good linear ratio of oxidation peak currents and concentrations of PCT over the range of 0.02–450 μM with a limit of detection of 1.69 nM were achieved. This novel electrode was stable for more than 60 days and reproducible responses were obtained at 99% of the initial current of PCT without any influence of physiologically common interferences such as ascorbic acid and uric acid. The application of this electrode to determine PCT in tablets and urine samples was proposed.