Micellization and morphological characterization of Ag-micelles prepared by poly(vinyl acetate)–silver nitrate in solvent/nonsolvent system

The inducing method for preparing Ag-micelle solution with the use of mixed solvent/nonsolvent, and the morphological characterization of the generated metal–micelles were investigated and reported in this paper. In this method, an Ag containing metal chelate polymer (MCP) raw solution was preprepared by dissolving poly(vinyl acetate) (PVAc)–silver nitrate (AgNO₃) MCP in conc. formic acid, and a mixed solvent of HCOOH/H₂O with specific water composition was then added to induce the micellization of the MCP chain. The critical water concentration (CWC) that was needed for inducing the formation of the Ag-micelles, and the water concentration at which the flocculation of the Ag-micelles occurred in micellar solution, were studied by measuring the transmittance of the dilute MCP solution; the results showed that a long-lasting MCP solution with stable micelles might be prepared by using a H₂O/HCOOH solvent of specific weight ratio 1:1.2. The effect of the AgNO₃ concentration on the morphology of the Ag-micelles was also investigated by transmission electron microscopy (TEM). At AgNO₃ concentration below 0.5 wt%, the Ag-micelles displayed a variety of core-shell structure; but as the AgNO₃ concentration was increased to 1.0–2.0 wt%, micelles that had Ag-solid embedded in the micellar core were observed.     

Diffusion barrier performance of TiVCr alloy film in Cu metallization

In this study, 15 nm-thick sputter-deposited TiVCr alloy thin films were developed as diffusion barrier layers for Cu interconnects. The TiVCr alloy film tends to form a solid solution and a simple crystal structure from the constituted elements. Under TEM, the 15 nm-thick as-deposited TiVCr alloy film was observed to have a dense semi-amorphous or nanocrystalline structure. In conjunction with X-ray diffraction, transmission electron microscopy, and energy-dispersive spectroscopy analyses, the Si/TiVCr/Cu film stack remained stable at a high temperature of 700 °C for 30 min. The electrical resistance of Si/TiVCr/Cu film stack remained as low as the as-deposited value. These indicated that the mixed TiVCr refractory elements’ alloy barrier layer is very beneficial to prevent Cu diffusion.     

Propagation and interaction of ion-acoustic solitary waves in a quantum electron-positron-ion plasma

This paper discusses the existence of ion-acoustic solitary waves and their interaction in a dense quantum electron-positron-ion plasma by using the quantum hydrodynamic equations.The extended Poincar’e-Lighthill-Kuo perturbation method is used to derive the Korteweg-de Vries equations for quantum ion-acoustic solitary waves in this plasma.The effects of the ratio of positrons to ions unperturbation number density p and the quantum diffraction parameter H e (H p) on the newly formed wave during interaction,and the phase shift of the colliding solitary waves are studied.It is found that the interaction between two solitary waves fits linear superposition principle and these plasma parameters have significantly influence on the newly formed wave and phase shift of the colliding solitary waves.The investigations should be useful for understanding the propagation and interaction of ion-acoustic solitary waves in dense astrophysical plasmas (such as white dwarfs) as well as in intense laser-solid matter interaction experiments.     

Structural and mechanical properties of multi-element (TiVCrZrHf)N coatings by reactive magnetron sputtering

In this study, (TiVCrZrHf)N multi-component coatings with quinary metallic elements were deposited by reactive magnetron sputtering system. The composition, structure, and mechanical properties of the coatings deposited at different N₂ flow rates were investigated. The (TiVCrZrHf)N coatings deposited at N₂ flow rates of 0, 1, and 2 SCCM showed an amorphous structure, whereas those deposited at N₂ flow rates of 4 and 6 SCCM showed a simple face-centered cubic solid solution structure. A saturated nitride coating was obtained for N₂ flow of 4 SCCM and higher. By increasing N₂ flow to 4 SCCM, the hardness and modulus reached a maximum value of 23.8 ± 0.8 and 267.3 ± 4.0 GPa, respectively.     

Effects of substrate temperature on the structure and mechanical properties of (TiVCrZrHf)N coatings

The present paper reports the influence of growth conditions on the characteristics of (TiVCrZrHf)N films prepared by rf reactive magnetron sputtering at various substrate temperatures. The nitrogen content is observed to decrease with increasing substrate temperature. The X-ray diffraction results indicate that all (TiVCrZrHf)N films are simple face centered cubic (FCC) structures. Initially, there is an obvious decrease followed by an increase in grain size with the increase in substrate temperature. The lower part of the microstructure has an amorphous structure. A nano grain structure (size ∼1 nm) with a random orientation is also observed above the amorphous structure. The fully dense columnar structure with an fcc crystal phase then starts to develop. Extreme hardness of around 48 GPa is obtained in the present alloy design.     

侧向二氟取代酯类液晶的合成

有源矩阵液晶显示(AM-LCD)发明于上世纪70年代末,但真正应用是在上世纪80年代中期。目前,主要是薄膜晶体管液晶显示(TFT-LCD),利用这种技术实现了视频图象显示,主要应用于摄像机、便携式计算机和各种终端显示器。近几年来,垂直排列有源矩阵液晶显示技术(VA)得到了飞速的发展,已成为LCD发展的主要方向之一。     

Structure and optoelectronic properties of multi-element oxide thin film

This paper focuses on analyzing structural and optoelectronic properties of (ZnSnCuTiNb)_1 − xO_x films. The results of XRD and HRTEM indicate that the (ZnSnCuTiNb)_1 − xO_x films are all of amorphous without any multi-phase structure. XPS analysis confirms that the increase of the oxygen content makes the cations electron binding energy higher, suggesting the removal of valence electrons or the extent of oxidation can change the optoelectronic properties of the films. The (ZnSnCuTiNb)_1 − xO_x films possess the characteristics of optoelectronic semiconductor whose oxygen content are 51.6 and 56 atom%. These films have carrier concentrations of 2.62 × 10²⁰ and 1.37 × 10¹⁷ cm⁻³, and conductivities (σ) of 57.2 and 9.45 × 10⁻³ (Ω cm)⁻¹, and indirect band gaps of 1.69 and 2.26 eV, respectively. They are n-type oxide semiconductors.     

利用水引发固相反应方法合成氮化铝纳米粉

以AlCl3和Li3N为前驱物,利用过量Li3N与水反应大量放热现象,引发两种前驱物之间的固相反应合成了AlN纳米粉．X射线衍射分析、红外吸收光谱、透射电子显微镜以及X射线光电子能谱测试结果表明,利用这种新的合成方法制备的氮化铝主要是六方相,而且颗粒细小．另外,这种方法反应迅速、操作过程简便,有利于降低制备成本和扩大制备规模．     

铝基非晶合金微观结构的特点与演变

选择Al90Fe5Ce5和Al83Zn7Ce10非晶合金来研究铝基非晶合金的微观结构的特点和微观结构的演变.在Al90Fe5Ce5非晶合金中,发现亚稳Al6Fe相与被铝相包裹的二十面体准晶相共存.在Al83Zn7Ce10非晶合金中,金属间化合物Al2ZnCe2为凝固过程中的初生相.金属间化合物Al2ZnCe2可以伴随纳米晶粒铝的晶化而析出.抑制在冷却过程中所形成的各种晶核的成长是铝基合金具有很强的非晶形成能力的主要原因.多种相的竞争形核和有限生长导致了铝基合金具有复杂的结构特点 关键词： 铝基非晶合金 二十面体准晶 预峰 化学短程序     

Effect of GePt buffer layer on magnetic properties and microstructure of FePt films

We have explored the interlayer diffusion effect of Ge/FePt, GePt/FePt bilayer on the formation of ordered L1₀ FePt phase. In Ge/FePt bilayer, the Ge₃Pt₂ compound was formed during post annealing at 400^oC for 1.0 h. Diffusion between Ge and FePt layer suppres the formation of ordered L1₀ FePt phase. With Ge₂Pt₃ underlayer, the FePt film was ordered at 400 °C and the in-plane coercivity was 9.3 kOe. The ordering temperature was reduced about 50 °C compared to the single layer FePt film.