La<Subscript>0.7</Subscript>Sr<Subscript>0.3</Subscript>MnO<Subscript>3</Subscript> thin films on SrTiO<Subscript>3</Subscript> and CaTiO<Subscript>3</Subscript> buffered Si substrates: structural,static, and dynamic magnetic properties

Nearly 50-nm thick La_0.7Sr_0.3MnO₃ (LSMO) films were grown on Si substrates using molecular beam epitaxy on (001) Si substrates over-layered by a 20 nm thick SrTiO₃ (STO) or by a 20 nm thick CaTiO₃ (CTO) film. In addition, a reference LSMO film was directly deposited on a (001) STO substrate by pulsed laser deposition. For all the samples, X-ray diffraction revealed an excellent epitaxy of the LSMO film and small mosaicity around (001), with in-plane [100] and [010] cubic axes. The LSMO/CTO films are in-plane compressed while the LSMO/STO ones are in-plane extended. The temperature dependence of their static magnetic properties was studied using a SQUID, showing a Curie temperature overpassing 315 K for all the samples. Hysteresis loops performed at room temperature (294 K) with the help of a vibrating sample magnetometer (VSM) are also discussed. At 294 K Micro-strip ferromagnetic resonance (MS-FMR) was used to investigate the dynamic magnetic properties. It allows concluding to a strong anisotropy perpendicular to the films and to a weak fourfold in-plane anisotropy with easy axes along the [110] and [1[`1]0 1\bar{1}0 ] directions. Their values strongly depend on the studied sample and are presumably related to the strains suffered by the films.     

Effect of Pr-Ca substitution on the transport and magnetic behavior of LaMnO3 perovskite

The effect of simultaneous substitution of a fluctuating cation and a divalent cation in LaMnO₃ perovskite modifies the properties of the material to exhibit large valence colossal magnetoresistance (CMR) effect. A good example of these properties is (La_1−2x Pr _x Ca _x )MnO₃ (LPCMO) type CMR material. In this communication it is reported that, with the increase in x (for x=0.1, 0.15, 0.2), the T _c varies between 100 and 120 K with improvisation in metal-insulator transition. Interestingly, resistance increases with x from few hundred ohms to few kilo ohms with corresponding decrease in the unit cell volume. The results of the studies using X-ray diffraction (XRD), electrical resistivity, magnetoresistance and ac susceptibility measurements on LPCMO samples for understanding the structural, transport and magnetic properties are discussed in detail.     

Strain-induced polarization rotation in epitaxial (001) BiFeO3 thin films

Direct measurement of the remanent polarization of high quality (001)-oriented epitaxial BiFeO3 thin films shows a strong strain dependence, even larger than conventional (001)-oriented PbTiO3 films. Thermodynamic analysis reveals that a strain-induced polarization rotation mechanism is responsible for the large change in the out-of-plane polarization of (001) BiFeO3 with biaxial strain while the spontaneous polarization itself remains almost constant.     

Enhancement of the superconducting transition temperature of MgB2 by a strain-induced bond-stretching mode softening

We report a systematic increase of the superconducting transition temperature T(c) with a biaxial tensile strain in MgB2 films to well beyond the bulk value. The tensile strain increases with the MgB2 film thickness, caused primarily by the coalescence of initially nucleated discrete islands (the Volmer-Weber growth mode.) The T(c) increase was observed in epitaxial films on SiC and sapphire substrates, although the T(c) values were different for the two substrates due to different lattice parameters and thermal expansion coefficients. We identified, by first-principles calculations, the underlying mechanism for the T(c) increase to be the softening of the bond-stretching E(2g) phonon mode, and we confirmed this conclusion by Raman scattering measurements. The result suggests that the E(2g) phonon softening is a possible avenue to achieve even higher T(c) in MgB2-related material systems.     

Imaging the phase separation in atomically thin buried SrTiO(3) layers by electron channeling

A phase-separation instability, resulting in the dewetting of thin SrTiO(3) films grown on Si(100) is shown by scanning transmission electron microscopy. Plan-view imaging of 1-nm thick, buried SrTiO(3) films was achieved by exploiting electron channeling through the substrate to focus the incident 0.2 nm beam down to a 0.04 nm diameter, revealing a nonuniform coverage by epitaxial SrTiO(3) islands and 2 x 1 Sr-covered regions. Density-functional calculations predict the ground state is a coexistence of 2 x 1 Sr-reconstructed Si and Sr-deficient SrTiO(3), in correspondence with the observed islanding.     

关于K个复相关矩阵相等的检验

§ 1.Ｉｎｔｒｏｄｕｃｔｉｏｎ　ＷｅａｒｅｇｉｖｅｎｋｉｎｄｅｐｅｎｄｅｎｔＷｉｓｈａｒｔｄｅｎｓｉｔｉｅｓｏｆｔｈｅ (ｐ +ｑ)× (ｐ +ｑ)ｒａｎｄｏｍｓｙｍｍｅｔｒｉｃｐｏｓｉｔｉｖｅｄｅｆｉｎｉｔｅｍａｔｒｉｃｅｓＧ1,… ,Ｇｋｔｏｂｅｇ(Ｇｉ) =Ｋｅｘｐ -12 ｔｒＲ- 1ｉ Ｇｉ Ｇｉ12 (ｎｉ- ｑ-ｐ- 1) ,(1 )ｗｈｅｒｅｉ=1 ,… ,ｋ,ａｎｄＲｉｄｅｎｏｔｅｓｔｈｅｐｏｐｕｌａｔｉｏｎｃｏｒｒｅｌａｔｉｏｎｍａｔｒｉｘｏｆｔｈｅｉ ｔｈｐｏｐｕｌａｔｉｏｎａｎｄＫａｓａｇｅｎｅｒｉｃｌｅｔｔｅｒｄｅｎｏｔｅ…     

Low temperature electron transport in phosphorus-doped ZnO films grown on Si substrates

Low temperature magneto-transport properties and electron dephasing mechanisms of phosphorus-doped ZnO thin films grown on (1 1 1) Si substrates with Lu₂O₃ buffer layers using pulsed laser deposition were investigated in detail by quantum interference and weak localization theories under magnetic fields up to 10 T. The dephasing length follows the temperature dependence with an index p≈1.6 at higher temperatures indicating electron–electron interaction, yet becomes saturated at lower temperatures. Consistent with photoluminescence measurements and the multi-band simulation of the electron concentration, such behavior was associated with the dislocation densities obtained from x-ray diffraction and mobility fittings, where charged edge dislocations acting as inelastic Coulomb scattering centers were affirmed responsible for electron dephasing. Owing to the temperature independence of the dislocation density, the phosphorus-doped ZnO film maintained a Hall mobility of 4.5 cm² V⁻¹ s⁻¹ at 4 K.     

Simultaneous measurement of the piezoelectric and dielectric response of nanoscale ferroelectric capacitors by an atomic force microscopy based approach

We present a sensitive method to simultaneously acquire the C(V ) characteristics and piezoresponse of sub-micron size ferroelectric capacitors using an Atomic Force Microscope (AFM). Model Pt/(La_0.5,Sr_0.5)CoO₃/PbZr_0.4Ti_0.6 O₃/(La_0.5,Sr_0.5)CoO₃/La:SrTiO₃/Si nanocapacitors were fabricated by focused ion beam milling from 100 μm² down to 0.04 μm². With this AFM based capacitance measurement technique we show clear “double-humped” C(V ) for all sizes with no significant change in the peak value of the ε_r down to capacitors with the smallest area of 0.04 μm². The smallest capacitance measured is only of the order a few femtofarads, demonstrating the high sensitivity of the technique. Simultaneously, the piezoelectric response is recorded for each measurement, thus the technique facilitates simultaneous piezoresponse and dielectric characterization of ferroelectric memory devices. PACS 77.55.+f; 77.90.+k; 85.50.-n; 77.84.-s