Correlation between energy positions of deep intrinsic point-defect levels and a limiting fermi level in irradiated III–V semiconductors

The energy levels of neutral anion (V_A) and cation (V_C) vacancies and antisite defects are calculated for the anion C_A and cation A_C sublattices of III–V semiconductors. An averaged energy level position for these defects is estimated to be E_av ^abs = 4.9 eV. The position coincides with the local charge electroneutrality level. It is shown that the case, where the total energies of formation of V_A, V_C and antisite C_A, A_C defects in the sublattices of binary semiconductors are similar, corresponds to the point-defect equilibrium condition and stabilization of the Fermi level in the proximity of the local charge electroneutrality level. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 5, pp. 17–22, May, 2007.     

The Fermi Level Pinning in Semiconductors (Interphase Boundaries,Clusters, and Radiation Modification)

The original results are presented, and the current status of the Fermi level pinning in semiconductors is reviewed for different physical phenomena (interphase boundaries, semiconductor clusters, and radiation modification of semiconductors).     

Coordination chemistry of actinides in molten salts

The problems of actinide molten salt coordination chemistry are considered in terms of spectroscopic parameters as functions of melt composition and temperature. Parameters connected with energy, intensity and fine structure of 5f-5f transitions have been obtained for molten alkali metal chlorides, fluorides and chloride-fluoride mixtures. The regularities of variation of both actinide-chlorine distances and actinide fluorocomplex stability have been studied.     

Electrophysical properties and annealing of defects in nuclear transmutation-doped GaAs irradiated by H+ ions

A study has been made of the electrophysical characteristics of nuclear-transmutation-doped GaAs (NTDG) and GaAs doped with metallurgical impurities Sn, Te, Ge, and In, after irradiation by H⁺ ions at fluxes of up to 1.5·10¹⁶ cm^–2. It is shown that the changes in the GaAs produced by irradiation do not depend on the method used to dope the material and can be described on the basis of the known spectrum of E and H traps in GaAs. Crystals of GaAs annealed after irradiation display deep (P1–P3) traps, which are responsible for the high-temperature proton insulation GaAs.V. D. Kuznetsov Siberian Physicotechnical Institute at the State University, Tomsk. Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 10, pp. 61–65, October, 1992.     

The charge neutrality level in w-AlxGa1−x N solid solutions

Energy positions of the charge electroneutrality level (CNL) and neutral vacancy levels of nitrogen are calculated for w-GaN, w-AlN, and w-Al _x Ga _1−x N versus solid-solution composition x in the virtual-crystal approximation. It is shown that within the whole range of the w-Al _x Ga _1−x N compositions, the CNL is located in the upper half of the band gap, which results in the n-type conductivity of this material upon exposure to high-energy radiation. __________ Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 8, pp. 75–78, August, 2006.     

Effect of electron irradiation on the properties of germanium-doped gallium arsenide

The Hall effect, electrical conductivity (77–370 K), and photoluminescence spectra (77 K) are studied in single-crystals of nuclearly doped GaAs (NDG) and GaAs doped with Ge by the metallurgical method after irradiation by electrons (E= 1 MeV, D=1.1·10¹⁵–3.8·10¹⁸ cm^–2). Initial electron concentrations were n= 1.7·10¹⁷ cm^–3 and n₀=2.6·10¹⁷ cm^–3 respectively. In the GaAs doped during crystal growth by the Czochralski method the degree of compensation related to the amphoteric impurity Ge is higher (K=0.8) than in the NDG (K=0.4) for identical initial electron concentration. It was established that the rate of charge carrier removal in GaAs is lower than in NDG, while radiation defects are more thermostable in NDG. The energy spectrum of radiation defects and radiating recombination centers, and the basic steps in reestablishment of electrophysical and optical properties in GaAs and NDG are similar, i.e., they do not depend on the method of germanium doping.Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 4, pp. 82–86, April, 1991.     

Photophysics and photochemistry of uranyl ions in aqueous solutions: Refining of quantitative characteristics

The photochemistry and photophysics of aqueous solutions of uranyl nitrate have been investigated by nanosecond laser photolysis with excitation at 266 and 355 nm and by time-resolved fluorescence spectroscopy. The quantum yield has been determined for (UO₂²⁺)* formation under excitation with λ = 266 and 355 nm light (φ = 0.35). The quantum yield of uranyl luminescence under the same conditions is 1 × 10^–2 and 1.2 × 10^–3, respectively, while the quantum yield of luminescence in the solid state is unity, irrespective of the excitation wavelength. The decay of (UO₂²⁺)* in the presence of ethanol is biexponential. The rate constants of this process at pH 3.4 are k₁ = (2.7 ± 0.2) × 10⁷ L mol^–1 s^–1 and k₂ = (5.4 ± 0.2) × 10⁶ L mol^–1 s^–1. This biexponential behavior is explained by the existence of different complex uranyl ion species in the solution. The addition of colloidal TiO₂ to the solution exerts no effect on the quantum yield of (UO₂²⁺)* formation or on the rate of the reaction between (UO₂²⁺)* and ethanol. The results of this study have been compared with data available from the literature.     

Temporal representations of the coefficients of aerodynamic forces and moments experienced by a rectangular wing under conditions of static hysteresis

Results are presented of experimental investigations into the static hysteresis of the aerodynamic characteristics of a rectangular wing with an aspect ratio of λ=5, obtained in static tests of a wing model in a wind tunnel. Variation with time of the aerodynamic forces and moments are analyzed in the range of angles of attack where a transition occurs from one branch of the hysteresis loop to the other.     

Hysteresis in the static aerodynamic characteristics of a curved-profile wing

The effect of profile asymmetry, Reynolds number, and angles of deflection of high-lift devices on the hysteresis loop shape in the dependences of the static aerodynamic forces and moments on angles of attack is studied. These dependences are measured in wind tunnels during testing of rectangular wings of equal thickness but different curvature. The wings have deflectable flaps spanning the wing trailing edge.     

Effect of pressure and mechanical stress on the electronic properties of AlN and GaN

The fundamental properties of the AlN and GaN compounds with a wurtzite structure under external hydrostatic pressure, uniaxial mechanical stress σ_⊥ along the hexagonal axis, and biaxial mechanical stress σ_⊥ in the basal plane of the unit cell have been considered in terms of first-principles calculations in the frame-work of the density functional theory. The pressures of the phase transitions from the structures of wurtzite and zinc blende to the structure of rock salt have been obtained. The behavior of the structural parameters, interband transitions, and positions of the charge neutrality level has been investigated. The calculated pressure coefficients of the band gap are as follows: ∂E _g /∂p = 40.9 meV/GPa, −∂E _g /∂σ _| = −4.2 meV/GPa, and −∂E _g /∂σ _⊥ = 45.2 meV/GPa for AlN and ∂E _g /∂p = 33.0 meV/GPa, −∂E _g /∂σ _| = 23.6 meV/GPa, and −∂E _g /∂σ _⊥ = 9.6 meV/GPa for GaN. The pressure coefficients of the charge neutrality level in almost all cases are substantially smaller than the corresponding values obtained for the band gap E _g .