Nature of conduction via impurities in uncompensated silicon

The static conductivity σ(E) and photoconductivity (PC) at radiation frequencies ħω=10 and 15 meV in Si doped with shallow impurities (density N=10¹⁶−6×10¹⁶ cm⁻³, ionization energy ε₁≃45 meV) with compensation K=10⁻⁴−10⁻⁵ in electric fields E=10–250 V/cm are measured at liquid-helium temperatures T. Special measures are taken to prevent the high-frequency part of the background radiation (ħω>16 meV) from striking the sample. It is found that the conductivity σ(E) is due to carrier motion along the D ⁻ band, which is filled with carriers under the influence of the field E. In fields E<E _q (E _q ≃100–200 V/cm) the carrier motion consists of hops along localized D ⁻ states in a 10–15 meV energy band below the bottom of the free band (energy ε=ε₁); for E>E _q carriers drift along localized D ⁻ states with energy ε∞ε₁−10 meV. An explanation is proposed for the threshold behavior of the field dependence of the photo-and static conductivities. Pis’ma Zh. éksp. Teor. Fiz. 66, No. 4, 232–236 (25 August 1997)     

Hadron diffractive processes: the structure of soft pomeron and colour screening

On the basis of the experimental data on diffractive processes in πp, pp and pˉp collisions at intermediate, moderately high and high energies, we restore the scattering amplitude related to the t-channel exchange by vacuum quantum numbers by taking account of the diffractive s-channel rescatterings. At intermediate and moderately high energies, the t-channel exchange amplitude turns, with a good accuracy, into an effective pomeron which renders the results of the additive quark model. At superhigh energies the scattering amplitude provides a Froissart-type behaviour, with an asymptotic universality of cross sections such as σ^tot _πp/σ^tot _pp→ 1 at s→∞. The quark structure of hadrons being taken into account at the level of constituent quarks, the cross sections of pion and proton (antiproton) in the impact parameter space of quarks, σ_π(r _1⊥, r _2⊥; s) and σ_p(r _1⊥, r _2⊥, r _3⊥; s), are found as functions of s. These cross sections implicate the phenomenon of colour screening: they tend to zero at |r _i⊥−r _k⊥|→ 0. The effective colour screening radius for pion (proton) is found for different s. The predictions for the diffractive cross sections at superhigh energies are presented. Received: 15 December 1998     

Crystal growth,electrical and photophysical properties of Tl<Subscript>2</Subscript>S layered single crystals

The Tl₂S compound was prepared in a single crystal form using a special local technique, and the obtained crystals were analysed by X-ray diffraction. For the resultant crystals, the electrical properties (electrical conductivity and Hall effect) and steady-state photoconductivity were elucidated in this work. The electrical measurements extend from 170 to 430 K, where it was found that σ _⊥ = 8.82 × 10⁻⁵ Sm⁻¹ when current flow direction makes right angle to the cleavage plane of the crystals. In the same range of temperatures, it was found that σ _‖ = 4.73 × 10⁻⁵ Sm⁻¹ when the current flow is parallel to the cleavage plane. In line with the investigated range of temperatures, the widths of the band gaps were calculated and discussed as also the results of the electrical conductivity and Hall effect measurements. In addition, the anisotropy of the electrical conductivity (σ _⊥/σ _‖) for the obtained crystals was also studied in this work. Finally the photosensitivity was calculated for different levels of illumination as a result of the photoconductivity measurements, which showed that the recombination process in Tl₂S single crystals is a monomolecular process.      

Superhyperfine structure of the EPR spectra of Nd<Superscript>3+</Superscript> and U<Superscript>3+</Superscript> ions in Li<Emphasis Type="Italic">R</Emphasis>F<Subscript>4</Subscript> (<Emphasis Type="Italic">R</Emphasis> = Y,Lu, Tm) double fluorides

The superhyperfine structure of the EPR spectra of impurity Nd³⁺ and U³⁺ ions in LiYF₄, LiLuF₄, and LiTmF₄ double-fluoride single crystals has been observed and discussed. In LiYF₄: Nd (g _| = 1.987, g _⊥ = 2.554) and LiTmF₄: Nd, the superhyperfine structure is observed at the orientation of the external magnetic field B in parallel to the c axis of the crystals and consists of nine components with a splitting of ∼15.4 MHz. In LiYF₄: U (g _| = 1.149, g _⊥ = 2.508) and LiLuF₄: U, the superhyperfine structure is observed at both B | c and B ⊥ c and consists of nine and eleven components, respectively, with a splitting of ∼21.5MHz. It should be noted that the resolution of the superhyperfine structure of the EPR spectrum of LiLuF₄: U³⁺ becomes significantly higher with a deviation from the orientation B ⊥ c.     

Investigation of low-temperature electrical conduction mechanisms in highly resistive GaN bulk layers extracted with Simple Parallel Conduction Extraction Method

The electrical conduction mechanisms in various highly resistive GaN layers of Al _x Ga_1−x N/AlN/GaN/AlN heterostructures are investigated in a temperature range between T=40 K and 185 K. Temperature-dependent conductivities of the bulk GaN layers are extracted from Hall measurements with implementing simple parallel conduction extraction method (SPCEM). It is observed that the resistivity (ρ) increases with decreasing carrier density in the insulating side of the metal–insulator transition for highly resistive GaN layers. Then the conduction mechanism of highly resistive GaN layers changes from an activated conduction to variable range hopping conduction (VRH). In the studied temperature range, ln (ρ) is proportional to T ^−1/4 for the insulating sample and proportional to T ^−1/2 for the more highly insulating sample, indicating that the transport mechanism is due to VRH.     

Hyperfine structure of <Emphasis Type="Italic">S</Emphasis>- and <Emphasis Type="Italic">P</Emphasis>-wave states in muonic-helium ion

Corrections of order α ⁵ and α ⁶ to the hyperfine structure of S- and P-wave energy levels of the muonic-helium ion are calculated. Electron-vacuum-polarization effects, corrections for the nuclear structure, and recoil effects are taken into account. The numerical values obtained for respective hyperfine splitting, −1334.73 meV (1S), −166.64 meV (2S), −58 712.90 μeV (2P _1/2), and −24 290.69 μeV (2P _3/2), can be viewed as a reliable estimate for a comparison with experimental data, and the hyperfine-structure interval of Δ₁₂ = 8ΔE ^hfs(2S) − ΔE ^hfs(1S) = 1.59 meV can be used to test QED predictions.     

Monte Carlo Modeling of Phonon-assisted Carrier Transport in Cubic and Hexagonal Gallium Nitride

Monte Carlo method is employed for the calculations of electron and hole transport characteristics of cubic and hexagonal GaN at T = 300 K in the fields of E ≤ 1000 kV/cm⁻¹. It is shown that electron drift velocity and mobility is heavily reduced in hexagonal crystals due to additional phonon modes (~ 26 meV) and by fast electron scattering between the lowest Γ₁ valley and the minimally (~ 400 meV) up-shifted Γ₃ valley. Intervalley scattering is mediated most efficiently by the low-energy (~ 2 meV) acoustic phonons. The randomizing scattering is even more pronounced in p-type crystals where the sub-bands of light and heavy holes merge at the Γ-point of Brillouin zone. Cubic phase crystals are concluded to be advantageous for ultrafast electronic and photonics device performance because electron drift mobility is higher by an order of magnitude, and the hole mobility is several times higher than those in hexagonal phase.     

Zeeman splitting factor of the Er3+ ion in a crystal field

Numerical computations are presented on the energy levels of the Er³⁺ ion in crystalline fields of cubic, trigonal, tetragonal and orthorhombic symmetry. Zeeman splitting factors were obtained from the level splitting in an additional magnetic field. For the quartet Γ₈ states in cubic symmetry the Zeeman effect is described by an effective Hamiltonian ℋ= gμ_BBJ+ uμ_BBJ³ with the parametersg andu calculated for mixed fourth- and sixth-order potentials. For the eight doublets in the lower symmetry of an axial trigonal or tetragonal crystal field the principalg tensor components g_∥ and g_⊥ were calculated. The results of such calculations for a ground-state doublet can exactly account for the experimental data obtained on around 70 erbium centers in various crystalline hosts. However, sometimes different sets of parameters give comparably good results. An empirical rule of constant trace g_∥ + 2g_⊥ is supported by the calculations. In contrast to analytical treatments the effect of the crystalline field can be followed over a continuous range of the crystal field parameters. This allows one to establish relations on the relative signs of tensor components. It is found that the measured trace of tensors |g_∥| + 2|g_⊥| is not always equal to their real trace g_∥ + 2g_⊥. In an exploratory calculation a nonaxial center was simulated in an orthorhombic field, with calculation of the three principal values g_x, g_y and g_z. A good agreement is obtained for the recently reportedg values of an erbium center in silicon.     

Thermo-optic coefficients of monoclinic KLu(WO<Subscript>4</Subscript>)<Subscript>2</Subscript>

The three thermo-optic coefficients of the biaxial laser host KLu(WO₄)₂ are measured at 633 nm by a deflection method. Their values at 300 K amount to ∂ n _g /∂ T=−7.4×10⁻⁶ K⁻¹; ∂ n _m /∂ T=−1.6×10⁻⁶ K⁻¹ and ∂ n _p /∂ T=−10.8×10⁻⁶ K⁻¹. Nearly athermal propagation directions are found for polarizations along the N _m and N _p dielectric axes.     

Thermo-optical properties of pure and Yb-doped monoclinic KY(WO4)2 crystals

The thermo-optic coefficients, dn/dT, were determined for pure and Yb(20 at.%)-doped monoclinic KY(WO₄)₂ crystals for light polarized along the optical indicatrix axes (N _p,N _m and N _g) in the wavelength range of 0.36–1.06 μm by a laser beam deviation method. The absolute values of thermo-optic coefficients satisfy the relation |dn _p/dT|>|dn _g/dT|>|dn _m/dT| and increase with the wavelength increasing. In the long-wavelength range, all the dn/dT values are negative: dn _p/dT=−14.6, dn _m/dT=−8.9, dn _g/dT=−12.4 [10⁻⁶ K⁻¹] for pure KY(WO₄)₂ at 1.06 μm. The dependency of thermo-optic coefficients on the wavelength was modeled using an approach that takes into account contribution of volumetric thermal expansion and change of electronic bandgap with temperature. Large volumetric expansion of KY(WO₄)₂ plays a key role in the observed negative dn/dT values. Electronic bandgap and its temperature coefficient were determined for KY(WO₄)₂ crystals from thermo-optic dispersion curves as E _g=4.8–5.0 eV and −dE _g/dT=0.7–1.1×10⁻⁴ eV/K. Athermal propagation directions were calculated for KY(WO₄)₂ crystals at the wavelength of 1.06 μm for light polarizations E∥N _m and N _p.     

Coexistence of one-electron- and monoprotonated two-electron-reduced species of the K5[PMo2VW9O40] · 24H2O heteropolyoxometalate identified by EPR

The simulation of the room-temperature experimental electron paramagnetic resonance spectrum of K₅[PMo₂VW₉O₄₀] · 24 H₂O heteropolyoxometalate indicates the presence of equal amounts of a one-electron-reduced species (g _∥ = 1.922,g _⊥ = 1.972,A _∥ = 181 G,A _⊥ = 63 G) and a monoprotonated two-electron-reduced species with mixed-valence V^IV, Mo^V and Mo^VI ions (g _iso = 1.972, ΔB _iso(p-p) = 450 G). Two unprotonated one-electron-reduced isomers are identified in dimethylsulfoxide-H₂O solution of the sample atT = 100 K (g _∥¹ = 1.929,g _⊥¹ = 1.990,A _∥¹ = 179 G,A _⊥¹ = 65 G andg _∥² = 1.918,g _⊥² = 2.000,A _∥² = 187 G,A _⊥² = 80 G, respectively). The values of the in-plane π(V−O) bond π₂² coefficient for the one-electron-reduced species (0.87 at room temperature and 0.83 and 0.74 for the species in frozen solution) suggests the delocalization of the vanadium unpaired electron towards the molybdenum ions via O_b atoms.     

ESR of V4+ in α-RbTiOPO4 single crystals

We have recorded and investigated the ESR spectrum of vanadium-doped α-RbTiOPO₄ single crystals in the temperature interval 77–300 K. Two types of structurally distinct centers, V1 and V2, with a 4:1 ratio of the peak intensities were observed. The angular dependences of the resonance magnetic fields are described by a spin Hamiltonian corresponding to axial symmetry with the parameters g _∥1=1.9305, g _⊥1=1.9565, A _∥1=−168.2×10⁻⁴cm⁻¹, and A _⊥1=−54.3×10⁻⁴cm⁻¹ for V1 centers and g _∥2=1.9340, g _⊥2=1.9523, A _∥2=−169.0×10⁻⁴cm⁻¹, and A _⊥2=−55.2×10⁻⁴cm⁻¹ for V2 centers. A model of a paramagnetic center is proposed: The vanadium ions replace titanium ions in two structurally distinct positions Ti1 and Ti2 (V1 and V2 centers, respectively). The possibility that a VO²⁺ ion forms when α-RbTiOPO₄ crystals and crystals of the KTP group (KTiOPO₄, NaTiOPO₄, α-and β-LiTiOPO₄), studied earlier, are doped with vanadium is discussed. Fiz. Tverd. Tela (St. Petersburg) 40, 534–536 (March 1998)     

Absolute cross sections of electron attachment to molecular clusters. Part II: Formation of (H2O) N? , (N2O) N? , and (N2) N?

Absolute cross sections σ⁻(E, N) of electron attachment to clusters (H₂O) _N , (N₂O) _N , and (N₂) _N for varying electron energy E and cluster size N are measured by using crossed electron and cluster beams in a vacuum. Continua of σ⁻(E) are found that correlate well with the functions of electron impact excitation of molecules’ internal degrees of freedom. The electron is attached through its solvation in a cluster. In the formation of (H₂O) _N ⁻ , (N₂O) _N ⁻ , and (N₂) _N ⁻ , the curves σ⁻(N) have a well-defined threshold because of a rise in the electron thermalization and solvation probability with N. For (H₂O)₉₀₀, (N₂O)₃₅₀, and (N₂)₂₆₀ clusters at E = 0.2 eV, the energy losses by the slow electron in the cluster are estimated as 3.0 × 10⁷, 2.7 × 10⁷, and 6.0 × 10⁵ eV/m, respectively. It is found that the growth of σ⁻ with N is the fastest for (H₂O) _N and (N₂) _N clusters at E → 0 as a result of polarization capture of the s-electron. Specifically, at E = 0.1 eV and N = 260, σ⁻ = 3.0 × 10⁻¹³ cm² for H₂O clusters, 8.0 × 10⁻¹⁴ cm² for N₂O clusters, and 1.4 × 10⁻¹⁵ cm² for N₂ clusters; at E = 11 eV, σ⁻ = 9.0 × 10⁻¹⁶ cm² for (H₂O)₂₀₀ clusters, 2.4 × 10⁻¹⁴ cm² for (N₂O)₃₅₀ clusters, and 5.0 × 10⁻¹⁷ cm² for (N₂)₂₆₀ clusters; finally, at E = 30 eV, σ⁻ = 3.6 × 10⁻¹⁷ cm² for (N₂O)₁₀ clusters and 3.0 × 10⁻¹⁷ cm² for (N₂)₁₂₅ clusters. Original Russian Text ? A.A. Vostrikov, D.Yu. Dubov, 2006, published in Zhurnal Tekhnicheskoĭ Fiziki, 2006, Vol. 76, No. 12, pp. 1–15.     

One-dimensional ionic conduction in solid Ag2 Tl6I10

The ionic and electronic conductivities of Ag₂Tl₆I₁₀ single crystals have been studied as a function of crystallographic orientation and temperature from 20 to 135°C. EMF as well as AC and DC techniques have been employed. The highly anisotropic material is predominantly an Ag⁺-ion conductor parallel toc-direction, with the Ag⁺ ions moving through linear channels that are not interconnected. The conductivity σ_‖c =1.6×10⁻⁷Ω⁻¹cm⁻¹ at 25°C, with an activation enthalpy for σ_‖c of 0.38 eV. The conduction perpendicular toc-direction has been found to be predominantly electronic with a value of σ_⊥c =3×10⁻⁹Ω⁻¹cm⁻¹ at 25°C and an activation enthalpy for σ_⊥c of 0.64 eV. This is the first observation of one-dimensional Ag⁺ conduction and this type of orientation-dependent change from ionic to electronic conduction. On leave from Institute of Physics, Academia Sinica, Peking, China.     

Stimulated polariton-polariton scattering and dynamic Bose-Einstein condensation of polaritons in GaAs microcavities under excitation near the exciton resonance

The dynamics of formation of the macroscopically occupied polariton mode at the bottom of the polariton band E _LP(k = 0) and its spin polarization under the quasiresonant pulse excitation of excitons (E = E _X ) with large values of quasi-momentum have been studied in planar GaAs microcavities. It has been found that the growth in the depth E _X − E _LP(k = 0) of the polariton band leads to the change in the formation mechanism for the k = 0 condensate state from the direct parametric decay of the photoexcited mode (due to the polariton-polariton interaction) to the dynamic condensation of polaritons, which results from the multiple scattering of polaritons by both phonons and polaritons. At the same time, in microcavities with E _X − E _LP(k = 0) > 3.5 meV, the direct decay of the photoexcited mode does not disappear, becoming an efficient mechanism for the filling of the states located at the k-space ring, corresponding to the energies E _LP(k) ≈ E _X − 2.6 meV.     

Trap-centers of self-interstitials in silicon

Deep-level profiles were measured radially acrossn-type FZ silicon wafers containing A-swirl defects by applying DLTS to an array of Schottky contacts. The trapparameters were obtained very accurately using a computer-fit procedure for the full DLTS peaks. Two acceptor levels atE _c −0.49 eV (σ _n =6.6×10⁻¹⁶cm²) andE _c −0.07 eV (σ _n =4.6×10⁻¹⁶cm²) were observed, which varied oppositely to the A-swirl defect density. At short ranges (1–2mm) the trap concentration-profile was smeared out and did not follow the strong fluctuations in the etch pattern. Both levels were measured together with the same concentration. The profiles indicate outdiffusion. A level atE _c −0.14 eV (σ _n =1.1×10⁻¹⁶cm²) was not related to A-swirl defects. A level atE _c −0.11 eV (σ _n =1.1×10⁻¹⁵cm²) was only detected in one ingot. The properties of the deep level atE _c −0.49 eV are discussed in the light of published DLTS results reported for γ-irradiation, laser annealing after self-implantation, annealing under pressure and oxidation of silicon samples. It is concluded, that this level is related to interstitial silicon rather than to an impurity.     

The Moduli of Flat PGL(2,ℝ) Connections on¶Riemann Surfaces

Suppose X is a compact Riemann surface with genus g>1. Each class [σ] ∈ Hom(π₁(X),PGL(2,ℝ))/PGL(2,ℝ) is associated with the first and second Stiefel–Whitney classes w ₁([σ]) and w ₂([σ]). The set of representation classes with a fixed w ₁≠ 0 has two connected components. These two connected components are characterized by w ₂ being 0 or 1. For each fixed w ₁≠ 0, we prove that the component, characterized by w ₂= 0, contains an open dense set diffeomorphic to the total space of a vector bundle of rank 2g−2 over a once punctured algebraic torus of dimension g−1. The other component, characterized by w ₂= 1, contains an open dense set diffeomorphic to the total space of a vector bundle of rank 2g−2 over an algebraic torus of dimension g−1. Received: 2 January 1997 / Accepted: 28 November 1998     

EPR of manganese-containing plasticine: Spectral simulation and use as an internal standard for comparison of the signal intensities of various free-radical EPR spectra

Electron paramagnetic resonance spectra of manganese-containing plasticine putty have been obtained both at 9.4 and 94.2 GHz (room temperature). It has been possible to analyze both, quantitatively by computer-based simulation and exact diagonalization of a general spin-Hamiltonian, by use of an appropriate powder technique. A fine fit was obtained for both frequencies with an isotropicg-2.00117, uniaxial⁵⁵Mn hyperfine valuesA _∥/g _c β _c = −93.5 G (where ‖ implies direction (ℤ) andA _⊥/g _c β _c = −94.3 G, a nuclear quadrupole effectP _z(⁵⁵Mn)=0, and a uniaxial electronic quadrupole matrix (D/g _c β _c = 3D _Z/2g _c β _c = −82.8 G). The electronic octupole energy was taken into account via the single parameterB ₄⁰/g _c β _c = −0.024 G. The plasticine has been demonstrated to afford a fine intensity and magnetic-field standard, say, for use with free radicals such as spin-trap adducts. Examples provided are 2,2-diphenyl-l-picrylhydrazyl, and hydroxyl radical generated by the Fenton reaction and spin-trapped with 5,5-dimethyl-1-pyroline-N-oxide.     

Low-temperature mobility of surface electrons and ripplon-phonon interaction in liquid helium

The low-temperature dc mobility of the two-dimensional electron system localized above the surface of superfluid helium is determined by the slowest stage of the longitudinal momentum transfer to the bulk liquid, namely, by the interaction between the surface and volume excitations of liquid helium, which decreases rapidly with the temperature. Thus, the temperature dependence of the low-frequency mobility is μ_dc ≈ 8.4 × 10⁻¹¹ n _e T ^−20/3 cm⁴ K^20/3/(V s), where n _e is the surface electron density. The relation T ^20/3 E_⊥⁻³ ≪ 2 × 10⁻⁷ between the pressing electric field (in kilovolts per centimeter) and temperature (in Kelvins) and the value ω ≲ 10⁸ T ⁵ K⁻⁵ s⁻¹ of the driving-field frequency have been obtained, at which the above effect can be observed. In particular, E _⊥ ≃ 1 kV/cm corresponds to T ≲ 70 mK and ω/2π ≲ 30 Hz.     

High resolution X-ray photoelectron spectroscopy on nitrogen molecules

This paper summarizes recent developments for experimental and theoretical studies on core-level photoelectron spectroscopy of N₂. Analysis of experimental spectra reveals that the 1σ_g and 1σ_u core-hole states differ in energy by ~100meV and in equilibrium bond length by ~0.04pm, in agreement with ab initio predictions. The ratio of the 1σ_g and 1σ_u photoionization cross sections measured in the photon energy range up to 1 keV reveals oscillatory structure due to two-center interference, equivalent to Young’s double-slit experiment, as Cohen and Fano predicted. The experimental Auger rates for the transition to the dicationic ground state are found to be different by a factor of two for 1σ_g and 1σ_u hole states and are well reproduced by the ab initio calculations. All these findings support the delocalized picture of the core hole. Discussion is given how many-body processes involved and observations for these processes affect the observation of the localized and/or delocalized core hole.