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Metal/superconductor/semiconductor (Ag/Hg-1212/CdSe) hetero-nanostructures have been fabricated using pulse-electrodeposition
technique and are characterized by X-ray diffraction (XRD), full-width at half-maximum (FWHM) and scanning electron microscopy
(SEM) studies. The junction capacitance of Ag/Hg-1212, Hg-1212/CdSe and Ag/Hg-1212/CdSe heterojunctions is measured in dark
and under laser irradiation at room temperature. The nature of the junction formed and built-in-junction potentials were determined.
The increase in carrier concentration across the junction due to photo-irradiation has been observed. 相似文献
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One of the innovative technological directions for the high-temperature superconductors has been persued by fabricating the
heteroepitaxial multilayer structures such as superconductor-semiconductor heterostructures. In the present investigation,
metal/superconductor/semiconductor (Ag/Tl-2223/CdSe) hetero-nanostructures have successfully been fabricated using dc electrodeposition
technique and were characterized by X-ray diffraction (XRD), full-width at half-maximum (FWHM) and scanning electron microscopy
(SEM) studies. The measurement of junction capacitance as a function of biasing voltage was used for the estimation of junction
built-in-potential (V
D) and to study the charge distribution in a heterojunction. The Mott-Schottky plots were measured for each junction in dark
and under the photo-irradiation. The effect of laser irradiation on C-V characteristics of hetero-nanostructure has been studied. 相似文献
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