Neutron Spectroscopy: The Initial Steps of Development in Our Country and Several Achievements

Crystallography Reports - Some questions related to the establishment, development, and prospects of physical studies using inelastic thermal-neutron scattering are briefly reviewed. The directions...     

Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ～8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic In_xAl_1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded In_xAl_1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As₄/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?10⁷ cm^?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform.     

Limiting Velocity and Dispersion Law of Domain Walls in Ferrimagnets Close to the Spin Compensation Point

JETP Letters - The motion of domain walls in GdFeCo-type ferrimagnets near the point of compensation of sublattice spins s1 and s2, when the effects of the exchange increase in the limiting wall...     

Erratum to: Analysis of the Purcell Effect in the Waveguide Mode by S-Quantization

Optics and Spectroscopy - 10.1134/S0030400X17050095     

Structure and Properties of Silumin Surface after Vacuum Arc Plasma-Assisted Deposition of Coatings Irradiated by Low Energy High Current Pulsed Electron Beam

Russian Physics Journal - The paper presents the results of modification of the silumin surface layer using a multicycle processing technique which combines the formation of the film...     

The Influence of Asymmetric Charge Transfer on IR Spectra of Excited Quadrupole Molecules

Optics and Spectroscopy - The influence of symmetry breaking caused by charge transfer in excited quadrupole molecules of the D-π-A-π-D or A-π-D-π-A type, where A and D are the...     

Purcell Effect and Nonlinear Behavior of the Emission in a Periodic Structure Composed of InAs Monolayers Embedded in a GaAs Matrix

Enhancement of spontaneous emission in a resonant Bragg quantum well (QW) structure with 60 periods of triple InAs monolayers embedded in a GaAs matrix is studied experimentally and theoretically. From measurements of the time‐resolved photoluminescence, besides the QW exciton at 1.47 eV, a specific super‐radiant (SR) emission demonstrating nonlinear properties is found. The SR mode shows a near‐quadratic dependence of intensity on excitation power, while its energy position follows the Bragg condition. It is revealed that the SR mode shows a peculiar non‐monotonic dependence of intensity on direction, with a maximum observed at approximately 40°. The enhancement in the SR emission at a specific direction is correlated well with suggested theoretical consideration of the modal Purcell factor for periodic quantum well structures.     

An infinite family of simply connected flag-transitive tilde geometries

We consider tilde-geometries (orT-geometries), which are geometries belonging to diagrams of the following shape: Here the rightmost edge stands for the famous triple cover of the classical generalized quadrangle related to the group Sp₄(2). The automorphism group of the cover is the nonsplit extension 3·Sp₄(2) – 3 ·S ₆. Five examples of flag-transitiveT-geometries were known. These are rank 3 geometries related to the groupsM ₂₄ (the Mathieu group),He (the Held group) and and 3⁷·Sp₆(2) (a nonsplit extension); a rank 4 geometry related to the Conway groupCo ₁ and a rank 5 geometry related to the Fischer-Griess Monster groupF ₁. In the present paper we construct an infinite family of flag-transitiveT-geometries and prove that all the new geometries are simply connected. The automorphism group of the rankn geometry in the family is a nonsplit extension of a 3-group by the symplectic group Sp_2n (2). The rank of the 3-group is equal to the number of 2-dimensional subspaces in ann-dimensional vector space over GF(2).     

Analogue of a spin flop phase transition for an array of magnetic moments with dipole interaction

In a two-dimensional array of magnetic moments with planar magnetization and relatively weak anisotropy in the basal plane, a stepwise phase transition is induced by an external magnetic field parallel to the easy axis of the system. This transition is similar to the spin flop phase transition in weakly anisotropic Heisenberg antiferromagnets with the significant difference that it is accompanied by the rearrangement of the sublattice structure of the magnet; i.e., it can be interpreted as a topological transition. The transition should manifest itself for arrays of submicron magnetic particles (magnetic dots) on nonmagnetic substrates, which have recently become the object of intensive research.