Neutron Spectroscopy: The Initial Steps of Development in Our Country and Several Achievements

Crystallography Reports - Some questions related to the establishment, development, and prospects of physical studies using inelastic thermal-neutron scattering are briefly reviewed. The directions...     

Metamorphic InAs(Sb)/InGaAs/InAlAs nanoheterostructures grown on GaAs for efficient mid-IR emitters

High-efficiency semiconductor lasers and light-emitting diodes operating in the 3–5?μm mid-infrared (mid-IR) spectral range are currently of great demand for a wide variety of applications, in particular, gas sensing, noninvasive medical tests, IR spectroscopy etc. III-V compounds with a lattice constant of about 6.1?Å are traditionally used for this spectral range. The attractive idea to fabricate such emitters on GaAs substrates by using In(Ga,Al)As compounds is restricted by either the minimum operating wavelength of ～8?μm in case of pseudomorphic AlGaAs-based quantum cascade lasers or requires utilization of thick metamorphic In_xAl_1-xAs buffer layers (MBLs) playing a key role in reducing the density of threading dislocations (TDs) in an active region, which otherwise result in a strong decay of the quantum efficiency of such mid-IR emitters. In this review we present the results of careful investigations of employing the convex-graded In_xAl_1-xAs MBLs for fabrication by molecular beam epitaxy on GaAs (001) substrates of In(Ga,Al)As heterostructures with a combined type-II/type-I InSb/InAs/InGaAs quantum well (QW) for efficient mid-IR emitters (3–3.6?μm). The issues of strain relaxation, elastic stress balance, efficiency of radiative and non-radiative recombination at T?=?10–300?K are discussed in relation to molecular beam epitaxy (MBE) growth conditions and designs of the structures. A wide complex of techniques including in-situ reflection high-energy electron diffraction, atomic force microscopy (AFM), scanning and transmission electron microscopies, X-ray diffractometry, reciprocal space mapping, selective area electron diffraction, as well as photoluminescence (PL) and Fourier-transformed infrared spectroscopy was used to study in detail structural and optical properties of the metamorphic QW structures. Optimization of the growth conditions (the substrate temperature, the As₄/III ratio) and elastic strain profiles governed by variation of an inverse step in the In content profile between the MBL and the InAlAs virtual substrate results in decrease in the TD density (down to 3?×?10⁷ cm^?2), increase of the thickness of the low-TD-density near-surface MBL region to 250–300?nm, the extremely low surface roughness with the RMS value of 1.6–2.4?nm, measured by AFM, as well as rather high 3.5?μm-PL intensity at temperatures up to 300?K in such structures. The obtained results indicate that the metamorphic InSb/In(Ga,Al)As QW heterostructures of proper design, grown under the optimum MBE conditions, are very promising for fabricating the efficient mid-IR emitters on a GaAs platform.     

Limiting Velocity and Dispersion Law of Domain Walls in Ferrimagnets Close to the Spin Compensation Point

JETP Letters - The motion of domain walls in GdFeCo-type ferrimagnets near the point of compensation of sublattice spins s1 and s2, when the effects of the exchange increase in the limiting wall...     

Erratum to: Analysis of the Purcell Effect in the Waveguide Mode by S-Quantization

Optics and Spectroscopy - 10.1134/S0030400X17050095     

Structure and Properties of Silumin Surface after Vacuum Arc Plasma-Assisted Deposition of Coatings Irradiated by Low Energy High Current Pulsed Electron Beam

Russian Physics Journal - The paper presents the results of modification of the silumin surface layer using a multicycle processing technique which combines the formation of the film...     

The Influence of Asymmetric Charge Transfer on IR Spectra of Excited Quadrupole Molecules

Optics and Spectroscopy - The influence of symmetry breaking caused by charge transfer in excited quadrupole molecules of the D-π-A-π-D or A-π-D-π-A type, where A and D are the...     

Purcell Effect and Nonlinear Behavior of the Emission in a Periodic Structure Composed of InAs Monolayers Embedded in a GaAs Matrix

Enhancement of spontaneous emission in a resonant Bragg quantum well (QW) structure with 60 periods of triple InAs monolayers embedded in a GaAs matrix is studied experimentally and theoretically. From measurements of the time‐resolved photoluminescence, besides the QW exciton at 1.47 eV, a specific super‐radiant (SR) emission demonstrating nonlinear properties is found. The SR mode shows a near‐quadratic dependence of intensity on excitation power, while its energy position follows the Bragg condition. It is revealed that the SR mode shows a peculiar non‐monotonic dependence of intensity on direction, with a maximum observed at approximately 40°. The enhancement in the SR emission at a specific direction is correlated well with suggested theoretical consideration of the modal Purcell factor for periodic quantum well structures.     

An infinite family of simply connected flag-transitive tilde geometries

We consider tilde-geometries (orT-geometries), which are geometries belonging to diagrams of the following shape: Here the rightmost edge stands for the famous triple cover of the classical generalized quadrangle related to the group Sp₄(2). The automorphism group of the cover is the nonsplit extension 3·Sp₄(2) – 3 ·S ₆. Five examples of flag-transitiveT-geometries were known. These are rank 3 geometries related to the groupsM ₂₄ (the Mathieu group),He (the Held group) and and 3⁷·Sp₆(2) (a nonsplit extension); a rank 4 geometry related to the Conway groupCo ₁ and a rank 5 geometry related to the Fischer-Griess Monster groupF ₁. In the present paper we construct an infinite family of flag-transitiveT-geometries and prove that all the new geometries are simply connected. The automorphism group of the rankn geometry in the family is a nonsplit extension of a 3-group by the symplectic group Sp_2n (2). The rank of the 3-group is equal to the number of 2-dimensional subspaces in ann-dimensional vector space over GF(2).     

光码分多址系统中光学相关接收机判决阈值的分析

介绍了光码分多址系统中常用地址码（一维扩时码、二维码和三维码）的特点，并对它们各自的互相关均值和方差进行了理论分析。基于非相干光码分多址系统中光学相关接收机的基本原理，结合不同的用户地址码，对系统误码率性能进行了分析，得到了接收机最佳判决阈值与地址码基本特性参数和系统同时用户数间的关系。最后，给出了数值仿真结果。结果表明，对于采用特定地址码的光码分多址系统，只有选择合适的接收机判决阈值，系统的误码率性能才能达到最佳。研究结果对光码分多址系统中接收机判决阈值的选取具有一定的参考作用。