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实验研究了温度对液相外延石榴石磁泡薄膜中条状普通硬磁畴壁内的垂直布洛赫线(VBL)链解体临界面内磁场区间的影响。发现存在一对特征温度T(1)0 和 T(2)0(前者比后者略低但均高于室温),在从室温到T(2)0的每个温度T下,使VBL逐渐消失的面内磁场Hip都分布于一个与T有关的区间[Hip(1)(T), Hip(2)(T)]内,称为临界面内磁场区间:Hip<Hip(1)(T)时,VBL链保持不变;Hip(1)(T)< Hip < Hip(2)(T)时,随着Hip的增加,越来越多的VBL消失;Hip > Hip(2)(T)时,所有VBL都消失。Hip(1)(T),Hip(2)(T)及Hip(2)(T)-Hip(1)(T)均随T的升高而下降,前二者分别于T(1)0 和 T(2)0降为零。比值Hip(2)(T)/Hip(1)(T)随T的升高而升高,在低温段(包括室温)升高缓慢且约为21/2,在T(1)0附近急剧升高且至T(1)0时趋于∞。对以上结果做了理论分析。
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INFLUENCE OF IN-PLANE FIELD ON THE CRITICAL TEMPERATURE FOR THE BREAKDOWN OF VERTICAL BLOCH LINE CHAINS 下载免费PDF全文
The influence of in-plane field Hip on the critical temperature T0 for the breakdown of vertical Bloch line (VBL) chains of hard domains in garnet bubble films has been inves-tigated experimentally. It was found that T0 can be significantly reduced by the increase of Hip. Besides, the critical in-plane field H′ip for the breakdown of VBL chains was measured as a function of temperature T for the same sample. As a result, the correlation between these two critical parameters, T0 and H′ip, was found. By introducing an effective in-plane field (Hip)e, the positive definiteness of the system of VBL pairs with two-dimemsional magnetization distribution was analyzed, giving rise to a theoretical expression of H′ip(T): H′ip(T) =|4πMsQ(a0+a1Q +a2Q2+a3Q3+ a4Q4)|T(T0(Hip=0)), where ai are constants. It agrees well with the experiments. 相似文献
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