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Electrical characteristics of MOS capacitor with HfTiON gate dielectric and HfTiSiON interlayer 下载免费PDF全文
The paper reports that HfTiO dielectric is deposited by reactive co-sputtering of Hf
and Ti targets in an Ar/O2 ambience, followed by an annealing in different gas
ambiences of N2, NO and NH3 at 600℃ for 2 min.
Capacitance--voltage and gate-leakage properties are characterized and compared. The
results indicate that the NO-annealed sample exhibits the lowest interface-state and
dielectric-charge densities and best device reliability. This is attributed to the
fact that nitridation can create strong Si \equiv N bonds to passivate
dangling Si bonds and replace strained Si--O bonds, thus the sample forms a hardened
dielectric/Si interface with high reliability. 相似文献
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Electrical properties and reliability of HfO2 gate-dielectric MOS capacitors with trichloroethylene surface pretreatment 总被引:1,自引:0,他引:1 下载免费PDF全文
Trichloroethylene (TCE) pretreatment of Si surface prior to HfO2 deposition is employed to fabricate HfO2 gatedielectric MOS capacitors. Influence of this processing procedure on interlayer growth, HfO2/Si interface properties, gate-oxide leakage and device reliability is investigated. Among the surface pretreatments in NH3, NO, N2O and TCE ambients, the TCE pretreatment gives the least interlayer growths the lowest interface-state density, the smallest gate leakage and the highest reliability. All these improvements should be ascribed to the passivation effects of Cl2 and HC1 on the structural defects in the interlayer and at the interface, and also their gettering effects on the ion contamination in the gate dielectric. 相似文献
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