| Electrical properties and reliability of HfO2 gate-dielectric MOS capacitors with trichloroethylene surface pretreatment |
| |
| 作者姓名： | 徐静平 陈卫兵 黎沛涛 李艳萍 陈铸略 |
| |
| 作者单位： | Department of Electronic Science & Technology, Huazhong University of Science and Technology, Wuhan 430074, China;Department of Electronic Science \& Technology, Huazhong University of Science and Technology, Wuhan 430074, China;Department of Electrical and Electronic Engineering, the
University of Hong Kong, Pokfulam Road, Hong Kong, China;Department of Electronic Science \& Technology, Huazhong University of Science and Technology, Wuhan 430074, China;Department of Electrical and Electronic Engineering, the
University of Hong Kong, Pokfulam Road, Hong Kong, China |
| |
| 基金项目： | Project supported by the National Natural Science Foundation of China (Grant No 60376019). |
| |
| 摘 要： | Trichloroethylene （TCE） pretreatment of Si surface prior to HfO2 deposition is employed to fabricate HfO2 gatedielectric MOS capacitors. Influence of this processing procedure on interlayer growth, HfO2/Si interface properties, gate-oxide leakage and device reliability is investigated. Among the surface pretreatments in NH3, NO, N2O and TCE ambients, the TCE pretreatment gives the least interlayer growths the lowest interface-state density, the smallest gate leakage and the highest reliability. All these improvements should be ascribed to the passivation effects of Cl2 and HC1 on the structural defects in the interlayer and at the interface, and also their gettering effects on the ion contamination in the gate dielectric.
|
| 关 键 词： | MOS电容器 高κ门介电性 HFO2 电学性质 可靠性 三氯乙烯表面预处理 |
| 收稿时间： | 6/6/2006 12:00:00 AM |
| 修稿时间： | 2006-06-062006-08-23 |
Electrical properties and reliability of HfO2 gate-dielectric MOS capacitors with trichloroethylene surface pretreatment |
| |
| Xu Jing-Ping,Chen Wei-Bing,Lai Pui-To,Li Yan-Ping and Chan Chu-Lok.Electrical properties and reliability of HfO2 gate-dielectric MOS capacitors with trichloroethylene surface pretreatment[J].Chinese Physics B,2007,16(2):529-532. |
| |
| Authors: | Xu Jing-Ping Chen Wei-Bing Lai Pui-To Li Yan-Ping and Chan Chu-Lok |
| |
| Abstract: | Trichloroethylene (TCE) pretreatment of Si surface prior to
HfO2 deposition is employed to fabricate HfO2
gate-dielectric MOS capacitors. Influence of this processing
procedure on interlayer growth, HfO2/Si interface
properties, gate-oxide leakage and device reliability is
investigated. Among the surface pretreatments in NH3, NO,
N2O and TCE ambients, the TCE pretreatment gives the least
interlayer growth, the lowest interface-state density, the
smallest gate leakage and the highest reliability. All these
improvements should be ascribed to the passivation effects of
Cl2 and HCl on the structural defects in the interlayer and
at the interface, and also their gettering effects on the ion
contamination in the gate dielectric. |
| |
| Keywords: | MOS capacitors high-k gate dielectric HfO2 interlayer surface treatment |
| 本文献已被 维普 等数据库收录！ |
| 点击此处可从《中国物理 B》浏览原始摘要信息 |
| 点击此处可从《中国物理 B》下载免费的PDF全文 |
|
