阵列式等离子体射流处理芽孢的实验研究北大核心CSCD

研制了一套单极性微秒脉冲阵列式等离子体射流系统,该系统可在大气压下激发产生等离子体射流,实现大面积的灭菌处理。该系统可产生峰值电压20 kV、频率15 kHz的高压脉冲,激发产生的射流均匀稳定,覆盖面积达37.7 cm2,射流长度达6 cm,射流功率为40.05 W,处理5 min可使射流覆盖范围内的枯草芽孢杆菌的芽孢基本全部失去活性。考察了不同参数对灭菌效率的影响,结果表明,灭菌率与工作电压、脉冲频率、处理时间呈正相关,在氦气氛围下有较好的灭菌效果。SEM显示等离子体射流能够对枯草芽孢杆菌的芽孢外壳结构造成损坏,导致芽孢无法正常代谢,最终死亡。     

InGaN/GaN multiple quantum well solar cells with an enhanced open-circuit voltage

In this paper,InGaN/GaN multiple quantum well solar cells (MQWSCs) with an In content of 0.15 are fabricated and studied.The short-circuit density,fill factor and open-circuit voltage (V oc) of the device are 0.7 mA/cm 2,0.40 and 2.22 V,respectively.The results exhibit a significant enhancement of V oc compared with those of InGaN-based hetero and homojunction cells.This enhancement indicates that the InGaN/GaN MQWSC offers an effective way for increasing V oc of an In-rich In x Ga 1 x N solar cell.The device exhibits an external quantum efficiency (EQE) of 36% (7%) at 388 nm (430 nm).The photovoltaic performance of the device can be improved by optimizing the structure of the InGaN/GaN multiple quantum well.     

High-Voltage AlGaN/GaN-Based Lateral Schottky Barrier Diodes

Lateral Schottky barrier diodes （SBDs） on A1GaN/GaN heterojunctions are fabricated and studied. The characteristics of the fabricated SBDs with different Schottky contact diameters and different Schottky-Ohmic contact spacings are investigated. The breakdown voltage can be increased by either increasing the Schottky-Ohmie con- tact spacing or increasing the Schottky contact diameter. However, the specific on-resistance is increased at the same time. A high breakdown voltage of 1400 V and low reverse leakage current below 20nA are achieved by the device with a Schottky contact diameter of 100 μm and a contact spacing of 40 μm, yielding a high V^2BR/ RoN,sp value of 194 MW.cm^-2.