Field Emission from Silicon Nanocrystallite Films with Compact Alignment and Uniform Orientation

Patterned silicon nanocrystallite (SINC) films were fabricated on (100) orientation p-type boron-doped sificon wafer by the hydrogen ion implantation technique and the anodic etching method. The efficient field emission with low turn-on field of about 3.5V/μm at current density of 0.1μA/cm^2 was obtained. The emission current density from the SiNC films reached 1mA/cm^2 under a bias field of about 9.1V/μm. The experimental results demonstrate that there are great potential applications of the SiNC films for fiat panel displays. A surface treatment with hydrogen plasma was performed on the SiNC films and a significant improvement of emission properties was achieved.     

弹簧摆的内共振特性分析

首先提出了一种弹簧摆模型,通过谐波平衡法对弹簧摆的内共振现象进行了解析处理,得到了弹簧摆内共振条件以及X、Z两模态能量之间的转换关系.再利用数值模拟得到弹簧摆内共振时的时序图、相图、轨迹图、能量图以及内共振耦合区域图等,分析表明,解析和数值模拟的结果与实验结果吻合一致.