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在0—7GPa静压范围内测量了自发有序Ga0.5In0.5P合金的室温光致发光谱.三块样品的常压带隙能量分别比无序样品低115,92和43meV,它们的压力系数也从无序样品的92meV/GPa分别减小到75,81和83meV/GPa.用Γ-L相互作用模型可以同时解释有序合金的带隙能量的降低以及压力系数的减小.得到的Γ-L相互作用势分别为0.19,0.15和0.10eV.表明在自发有序Ga0.5In0.5P合金中存在着的 相似文献
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0.6-eV bandgap In0.69Ga0.31As thermophotovoltaic devices with compositionally undulating step-graded InAsyP1-y buffers 下载免费PDF全文
Single-junction,lattice-mismatched In0.69Ga0.31As thermophotovoltaic(TPV) devices each with a bandgap of 0.6 eV are grown on InP substrate by metal-organic chemical vapour deposition(MOCVD).Compositionally undulating stepgraded InAsyP1-y buffer layers with a lattice mismatch of ~1.2% are used to mitigate the effect of lattice mismatch between the device layers and the InP substrate.With an optimized buffer thickness,the In0.69Ga0.31As active layers grown on the buffer display a high crystal quality with no measurable tetragonal distortion.High-performance single-junction devices are demonstrated,with an open-circuit voltage of 0.215 V and a photovoltaic conversion efficiency of 6.9% at a short-circuit current density of 47.6 mA/cm2,which are measured under the standard solar simulator of air mass 1.5-global(AM 1.5 G). 相似文献
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Low metal-graphene contact resistance is important in making high-performance graphene devices.In this work,we demonstrate a lower specific contact resistivity of Au_(0.88)Ge_(0.12)/Ni/Au-graphene contact compared with Ti/Au and Ti/Pt/Au contacts.The rapid thermal annealing process was optimized to improve AuGe/Ni/Au contact resistance.Results reveal that both pre- and post-annealing processes are effective for reducing the contact resistance.The specific contact resistivity decreases from 2.5 × 10~(-4) to 7.8 × 10~(-5) Ω·cm~2 by pre-annealing at 300 ℃ for one hour,and continues to decrease to9.5 × 10~(-7) H·cm~2 after post-annealing at 490 ℃ for 60 seconds.These approaches provide reliable means of lowering contact resistance. 相似文献
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在室温和非共振条件下测量了自发有序Ga0.5In0.5P合金的喇曼散射谱。测得的380,360和330cm-1附近的三个散射峰分别归结于合金中的类GaP的LO模、类InP的LO模和TOM。发现有序合金的类GaP的LO模的声子频率随着合金的带隙能量的降低而增大。认为这与在有序合金中形成沿[111]方向的(GSP)1/(InP)1单层超晶格有一定联系。在几种偏振配置下测得的有序合金的喇曼谱的偏振特性与通常的闪锌矿结构的半导体材料的偏振特性类似。 相似文献
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Control of symmetric properties of metamorphic In_(0.27)Ga_(0.73)As layers by substrate misorientation 下载免费PDF全文
Asymmetry in dislocation density and strain relaxation has a significant impact on device performance since it leads to anisotropic electron transport in metamorphic materials. So it is preferred to obtain metamorphic materials with symmetric properties. In this paper, we grew metamorphic In_(0.27)Ga_(0.73) As epilayers with symmetric low threading dislocation density and symmetric strain relaxation in two (110) directions using In Al Ga As buffer layers on 7°misoriented Ga As(001)substrates. To understand the control mechanism of symmetric properties of In_(0.27)Ga_(0.73) As layers by the substrate miscut angles, In_(0.27)Ga_(0.73) As grown on 2°and 15°misoriented substrates were also characterized as reference by atomic force microscopy, transmission electron microscopy, and high resolution triple axis x-ray diffraction. The phase separation and interaction of 60°misfit dislocations were found to be the reasons for asymmetry properties of In_(0.27)Ga_90.73 As grown on 2and 15°substrates, respectively. Photoluminescence results proved that the In_(0.27)Ga_(0.73) As with symmetric properties has better optical properties than the In_(0.27)Ga_(0.73) As with asymmetric properties at room temperature. These results imply that high quality metamorphic In_(0.27)Ga_(0.73) As can be achieved with controllable isotropic electron transport property. 相似文献
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用常压MOCVD在半绝缘GaAs衬底上生长了GaxIn1-xP(x=0.476~0.52)外延层,对外延层进行了X光双晶衍射、Hall和光致发光(PL)测试.77K下电子迁移率达3300cm2/V.s(浓度为1.4×1016cm-3).载流子浓度随生长温度升高,随Ⅴ/Ⅲ比的增大而降低,并提出P空位(Vp)是自由载流子的一个重要来源,17KPL谱中,Ga0.5In0.5P(Tg=650℃,Ⅴ/Ⅲ=70)的峰能为1.828eV,半峰宽为19meV.另外,在1.849eV处还有一较弱的峰,GaInP峰能和其计算的带隙最大相差113meV,这可能与GaInP中杂质或缺陷以及其中存在有序结构有关. 相似文献
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本文用光致发光(PL)研究了MOCVD(金属氧化物化学气相沉积)生长的有序Ga0.5In0.5P外延层的光学性质.发现有序程度较强的Ga0.5In0.5样品的PL谱中一峰的能量随温度升高,先增大而后又减小.根据已有的报道和本文的实验结果,提出了一个有序Ga0.5In0.5P的模型,模型中将有序Ga0.5In0.5P看作阶宽随机分布的Ⅱ型多量子阱结构,能带边之下存在带尾态,并用该模型对实验结果进行了较好的解释. 相似文献
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惯性制导平台台体有限元分析 总被引:1,自引:0,他引:1
本文运用有限元方法分析惯性制导平台台体的刚度和强度,通过模型离散,模拟实际施加外力,计算得到模型的位移场和应力场,获得了安装面的转角位移及应力极值等关心的物理量,并通过动力分析程序得到了结构各阶固有频率和振型。 相似文献