Structural evolution and bandgap modulation of layered β-GeSe2 single crystal under high pressure

Germanium diselenide (GeSe₂) is a promising candidate for electronic devices because of its unique crystal structure and optoelectronic properties. However, the evolution of lattice and electronic structure of $β$-GeSe₂ at high pressure is still uncertain. Here we prepared high-quality $β$-GeSe₂ single crystals by chemical vapor transfer (CVT) technique and performed systematic experimental studies on the evolution of lattice structure and bandgap of $β$-GeSe₂ under pressure. High-precision high-pressure ultra low frequency (ULF) Raman scattering and synchrotron angle-dispersive x-ray diffraction (ADXRD) measurements support that no structural phase transition exists under high pressure up to 13.80 GPa, but the structure of $β$-GeSe₂ turns into a disordered state near 6.91 GPa and gradually becomes amorphous forming an irreversibly amorphous crystal at 13.80 GPa. Two Raman modes keep softening abnormally upon pressure. The bandgap of $β$-GeSe₂ reduced linearly from 2.59 eV to 1.65 eV under pressure with a detectable narrowing of 36.5%, and the sample under pressure performs the piezochromism phenomenon. The bandgap after decompression is smaller than that in the atmospheric pressure environment, which is caused by incomplete recrystallization. These results enrich the insight into the structural and optical properties of $β$-GeSe₂ and demonstrate the potential of pressure in modulating the material properties of two-dimensional (2D) Ge-based binary material.     

外场对拓扑相变氧化物薄膜物性的调控研究进展

钙钛矿型过渡金属氧化物在外场激励下可以通过得失氧离子发生显著的结构拓扑相变,同时伴随着输运、磁性、光学等物性的巨大变化,是近年来被重点关注的研究体系,在固态氧化物燃料电池、氧气传感器、催化活性、智能光学窗口以及神经形态计算器件中具有巨大的应用前景.本工作回顾了近年来国内外研究小组在拓扑相变氧化物薄膜及其物性调控方面的工作进展,详细介绍了这类典型薄膜材料在应力场、电场、光场、温度场等外场激励下呈现出的新奇物性,并讨论了其基本物理机制.本综述旨在进一步认识此类材料中的电荷、晶格、轨道等量子序之间的微观耦合机制及其与宏观物性的关联,相关研究有望为基于功能氧化物的高灵敏度、弱场响应的电子器件提供新材料、新途径和新思路.