霍尔推进器的研究现状与发展趋势

电推进是利用电能加热、离解和加速工质，使其形成高速射流而产生推力的技术。与化学推进相比，电推进具有比冲高、推力小、能重复启动、重量轻和寿命长等特点，因而电推进可用作航天器的姿态控制、轨道转移和提升、轨道修正、阻力补偿、位置保持、重新定位、离轨处理、宇宙探测和星际航行等任务。     

Factors influencing the performance of paintable carbon-based perovskite solar cells fabricated in ambient air

To date, many efforts have been made to improve the performance of paintable carbon-based(PC-based) perovskite solar cells(PSCs). Though great progress has been achieved, their power conversion efficiencies are still relatively low compared with hole-transport-materials-based PSCs. General research on influencing factors of performance in PC-based PSCs is still insufficient. In this work, PC-based PSCs were fabricated in ambient air and four groups of controlled experiments were performed in which the PbI_2 layers were prepared with or without antisolvent extraction treatment. These four groups of experiments were designed to find out the effect of different influencing factors on PC-based PSCs performance,for example, PbI_2 residual, the surface morphology of the perovskite film, the surface roughness of the perovskite film, and the contact status of the perovskite/carbon electrode interface. With a systematic analysis, we demonstrated that the contact status of the perovskite/carbon electrode interface played a vital role in PC-based PSCs, and a flat, smooth perovskite surface could help to improve this contact status significantly. Besides, on the precondition of a poor contact interface, no PbI_2 residual and a good surface morphology only brought limited benefits to the performances of PC-based PSCs.     

以B-γ-CsSnI3为光吸收层的平面异质结钙钛矿太阳能电池的模拟优化

采用AFORS-HET软件对以B-γ-CsSnI3作为光吸收层的平面异质结钙钛矿太阳能电池结构进行了模拟优化,其中TiO2作为电子传输层,Spiro-OMeTAD作为空穴传输层,讨论了钙钛矿太阳能电池光吸收层以及空穴传输层的各种参数对太阳能电池性能的影响.模拟优化得到B-γ-CsSnI3的PSCs最佳性能参数为:Voc=1.18 V,Jsc=24.48 mA/cm2,FF=80.04;,PCE=23.15;,效率虽略低于以CH3NH3PbI3作为光吸收层的钙钛矿太阳能电池,但考虑铅的毒性和钙钛矿电池的稳定性,以B-γ-CsSnI3作为光吸收层的PSCs将具有更好的应用前景.     

无限深势阱问题的可视化研究

基于计算软件对一些常见的无限深势阱进行了可视化研究,并设计了GUI界面实现对势阱的选择.在选定势阱后,设置好相应的势阱参数和量子数,便可依次绘制出低维势阱的波函数、概率密度函数和三维势阱中的电子云图像.文中分析了二维和三维势阱中能级的简并度问题,并重点讨论了不同势阱波函数和概率密度函数随量子数的变化规律.将势阱问题可视化可以方便分析不同条件下波函数的物理图像,有助于量子力学课程中的教师教学与学生学习.     

High-sensitive phototransistor based on vertical HfSe2/MoS2 heterostructure with broad-spectral response

Van der Waals heterostructures based on the two-dimensional (2D) semiconductor materials have attracted increasing attention due to their attractive properties. In this work, we demonstrate a high-sensitive back-gated phototransistor based on the vertical HfSe₂/MoS₂ heterostructure with a broad-spectral response from near-ultraviolet to near-infrared and an efficient gate tunability for photoresponse. Under bias, the phototransistor exhibits high responsivity of up to 1.42×10³ A/W, and ultrahigh specific detectivity of up to 1.39×10¹⁵ cm·Hz^1/2·W^-1. Moreover, it can also operate under zero bias with remarkable responsivity of 10.2 A/W, relatively high specific detectivity of 1.43×10¹⁴ cm·Hz^1/2·W^-1, ultralow dark current of 1.22 fA, and high on/off ratio of above 10⁵. These results should be attributed to the fact that the vertical HfSe₂/MoS₂ heterostructure not only improves the broadband photoresponse of the phototransistor but also greatly enhances its sensitivity. Therefore, the heterostructure provides a promising candidate for next generation high performance phototransistors.     

不同散射机理对 Al2O3/InxGa1-xAs nMOSFET 反型沟道电子迁移率的影响

通过考虑体散射、界面电荷的库仑散射以及 Al₂O₃/In_xGa_1-xAs 界面粗糙散射等主要散射机理, 建立了以 Al₂O₃为栅介质In_xGa_1-xAs n 沟金属-氧化物-半导体场效应晶体管 (nMOSFETs) 反型沟道电子迁移率模型, 模拟结果与实验数据有好的符合. 利用该模型分析表明, 在低至中等有效电场下, 电子迁移率主要受界面电荷库仑散射的影响; 而在强场下, 电子迁移率则取决于界面粗糙度散射. 降低界面态密度, 减小 Al₂O₃/In_xGa_1-xAs 界面粗糙度, 适当提高In含量并控制沟道掺杂在合适值是提高 InGaAs nMOSFETs 反型沟道电子迁移率的主要途径. 关键词： InGaAs MOSFET 反型沟道电子迁移率 散射机理     

量子力学虚拟实验的MATLAB演示

量子力学是一门较抽象的科学.为了更直观、形象地展示量子力学中的一些物理原理和实验现象,本文利用MAT-LAB软件搭建了一个量子力学的虚拟演示平台,可以生动地演示电子双缝衍射、量子隧穿效应、氢原子电子云和斯塔克效应等现象.通过相关物理参数的输入以及物理现象的演示,可以使学生在量子力学的学习中获得更直观的教学感受.     

CsGeI3空穴传输层平面异质结钙钛矿太阳电池的模拟优化

采用AFORS-HET软件对CsGeI3空穴传输层(Hole Transport Material, HTM)平面异质结钙钛矿太阳电池进行了模拟,TiO2作为电子传输层,CH3NH3PbI3作为光吸收层,C作为背电极,分别讨论了钙钛矿光吸收层厚度、缺陷浓度,光吸收层/HTM界面态密度和HTM对太阳电池性能参数的影响.模拟优化得到CsGeI3 HTM的PSCs最佳性能参数为:Voc=1.199 V,Jsc=22.2 mA·cm-2,FF=86.22;,PCE=22.95;,效率虽略低于spiro作为HTM的器件,但考虑生产工艺和制备成本,CsGeI3作为HTM的PSCs将具有更好的应用前景.     

测量动光栅瞬时速度的有效方法

激光束通过双光栅衍射,衍射光束重叠形成光拍,光拍信号通过硅光电池进行光电转换,得到的信号电流的频率等于多普勒频移.信号电流经I/V转换、反函数电路和微分及计算电路运算后,可以确定多普勒频移,从而确定动光栅的运动速度.测量了音叉在换能器的作用下做微振动时动光栅的瞬时速度.     

硒化镉纳米线在应力作用下的第一性原理研究

基于密度泛函理论的第一性原理计算分析了不同横向尺寸的硒化镉(cdse)纳米线在拉伸和压缩单轴应力作用下的能带结构、载流子(电子和空穴)的有效质量以及迁移率的变化.计算结果表明,CdSe纳米线在施加应变或改变横向尺寸时,均表现为直接带隙半导体.随着压缩应变(0;～-10;)和拉伸应变(2;～10;)的增加,CdSe纳米线的带隙逐渐减小,但横向尺寸小的纳米线的带隙相对宽些.导带底电子迁移率随着应变从-10;至10;变化而逐渐减小,而价带顶空穴迁移率在施加应变从4;至10;变化时也缓慢减小.直径为1.2 nm的CdSe纳米线在施加的压缩应变为-10;时,电子和空穴迁移率最大,分别为2890em2·V-1·s-1和2273 cm2·V-·s-1.因此,横向尺寸较小的CdSe纳米线在合适的压应力调控下有望成为一种制备高性能新型纳米电子器件的候选材料.