基于蛋清栅绝缘层的高性能C_(60)有机场效应晶体管(英文)

采用生物材料(蛋清)作为栅绝缘层制备了基于C60为有源层的有机场效应晶体管。器件展现出了合理的电学特性,场效应迁移率和阈值电压分别为2.59 cm2·V-1·s-1和1.25 V。有机场效应晶体管展现良好性能的原因是蛋清具有较高的介电常数及热退火后形成的光滑表面形貌。实验结果表明,对于制备有机场效应晶体管来说,蛋清是一种有前途的绝缘层材料。     

一种用于检测PO43-离子、Fe3+离子和硝基芳香爆炸物的水稳定发光Zn-配合物传感器

基于3-（2,4-二羧基苯基）-6-羧基吡啶配体（H₃dpcp）,利用溶剂热法制备了发光配合物[Zn（H₂dpcp）₂（H₂O）₂]·H₂O（1）。配合物1具有新颖的单核蝴蝶状结构,通过π…π相互作用延伸成三维超分子结构。实验结果表明,配合物1在pH=1~10的水溶液中表现出优异的发光稳定性。值得注意的是,配合物1不仅可以利用荧光增强效应高选择性和可循环性地检测PO₄^3-离子,并且Fe³⁺离子可以使配合物1的发光显著猝灭。对硝基芳香族爆炸物的荧光传感实验表明,配合物1可以作为发光探针高选择性、灵敏性地检测2,4,6-三硝基苯酚（TNP）,同时具有较低的检测限。此外,还详细探究了配合物1对上述分析物的发光传感机理。     

Formation of L10-FeNi hard magnetic material from FeNi-based amorphous alloys

L1₀-FeNi hard magnetic alloy with coercivity reaching 861 Oe was synthesized through annealing Fe₄₂Ni_41.3Si₈B₄P₄Cu_0.7 amorphous alloy, and the L1₀-FeNi formation mechanism has been studied. It is found the L1₀-FeNi in annealed samples at 400 ℃ mainly originated from the residual amorphous phase during the second stage of crystallization which could take place over 60 ℃ lower than the measured onset temperature of the second stage with a 5 ℃/min heating rate. Annealing at 400 ℃ after fully crystallization still caused a slight increase of coercivity, which was probably contributed by the limited transformation from other high temperature crystalline phases towards L1₀ phase, or the removal of B from L1₀ lattice and improvement of the ordering quality of L1₀ phase due to the reduced temperature from 520 ℃ to 400 ℃. The first stage of crystallization has hardly direct contribution to L1₀-FeNi formation. Ab initio simulations show that the addition of Si or Co in L1₀-FeNi has the effect of enhancing the thermal stability of L1₀ phase without seriously deteriorating its magnetic hardness. The non-monotonic feature of direction dependent coercivity in ribbon segments resulted from the combination of domain wall pinning and demagnetization effects. The approaches of synthesizing L1₀-FeNi magnets by adding Si or Co and decreasing the onset crystallization temperature have been discussed in detail.     

高温超导带材制备工艺的发展现状

由铋锶钙铜氧(BSCCO)制成的铋系带材、由钇钡铜氧(YBCO)制成的钇系带材和二硼化镁(MgB_2)线带材是目前实用化程度最高的三种高温超导带材。制备工艺是影响其性能的主要因素,随着传统工艺的发展和新工艺的应用,高温超导带材在制备规模和性能上均有明显提升。热等静压技术解决了铋系带材的致密性问题,高质量4 mm宽铋系带材的临界电流I_c可达200 A,且通过封装增强层可应用于各种复杂的工作环境。薄膜沉积工艺的优化与开发使钇系带材的制备取得了突破,国内外已有多家公司可提供千米级的商用钇系带材,且带材的I_c普遍达350 A/cm以上,正朝单根1 000 A/cm的目标迈进。先进管线成形工艺的应用使MgB_2的单根制备长度增加了数倍,在低温强磁场下的性能优势,使其有望成为该环境下的主流产品。     

V2O5电极修饰对C60/Pentacene双层异质结场效应晶体管性能的影响

制备了用过渡金属氧化物V₂O₅修饰Al源、漏电极的C₆₀/Pentacene双层异质结有机场效应管.该构型器件与未修饰器件相比,呈现出典型的双极型晶体管传输特性.电子迁移率和空穴迁移率分别达到8.6×10^-2cm²/V·s^-1和6.4×10^-2cm²/V·s^-1,阈值电压分别为25 V和-25 V.器件性能改善的原因主要是由于插入V₂O₅修饰层后,可以明显降低Al电极与Pentacene之间的接触势垒,提高空穴的有效注入,从而使电子和空穴的注入接近平衡.研究表明,采用V₂O₅修饰电极方法,是制备低成本、高性能的双极型有机场效应管并实现其商业应用的有效途径.