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We experimentally investigated the VUV excitation luminescence properties of Ca4 GdO(B03)3 :RE (RE=Eu^3 , Tb^3 )Ca4GdO(BO3)3:Eu3 and Ca4GdO(BO3)3:Tb^3 emitted bright red and green colour light, respectively, under 172 nm excitation, resulting from the favorable position of the host absorption band (186 nm) and efficient energy transfer from Gd^3 to activators (e.g. Eu^3 or Tb^3 ) by means of secondary absorption in the Ca4GdO(BO3)3 matrix. The f-d transitions of Eu^3 and Tb^3 in the host lattice are depicted. 相似文献
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Plasmon modes in graphene can be tuned into resonance with an incident terahertz electromagnetic wave in the range of 1–4 THz by setting a proper gate voltage.By using the finite-difference-time-domain(FDTD)method,we simulate a graphene plasmon device comprising a single-layer graphene,a metallic grating,and a terahertz cavity.The simulations suggest that the terahertz electric field can be enhanced by several times due to the grating–cavity configuration.Due to this near-field enhancement,the maximal absorption of the incident terahertz wave reaches up to about 45%. 相似文献
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采用固相合成方法制备出CaBiO2Cl,SrBiO2Cl和BaBiO2Cl粉体,研究了该Sillen系列铋基氧卤化合物的光学带隙、电子结构及发光性能.基于密度泛函理论计算表明,SrBiO2Cl和BaBiO2Cl均为直接带隙半导体材料,与吸收光谱实验结果相符合.在X射线和紫外光激发下三者均具有宽的可见光发射带(400—550nm),尤其是BaBiO2Cl粉体的光输出强度约为Bi
关键词:
光致发光
电子结构
Sillen化合物 相似文献
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采用固相合成方法制备出CaBiO2Cl,SrBiO2Cl和BaBiO2Cl粉体,研究了该Sillen系列铋基氧卤化合物的光学带隙、电子结构及发光性能.基于密度泛函理论计算表明,SrBiO2Cl和BaBiO2Cl均为直接带隙半导体材料,与吸收光谱实验结果相符合.在X射线和紫外光激发下三者均具有宽的可见光发射带(400-550 nm),尤其是BaBiO2Cl粉体的光输出强度约为Bi4Ge3O12(BGO)粉体光输出强度的1.4倍,并且具有更短的衰减时间,发光衰减时间的主要部分为100 ns(22%)和300 ns(41%),而BGO粉体的主要衰减时间为300 ns(75%).实验分析表明,该化合物发光性能与晶体结构中Bi-O(Cl)键长及碱土金属离子的半径相关.同时BaBiO2Cl具有较大的密度(6.98 g/cm3,因此它是一种具有潜在应用价值的闪烁材料. 相似文献
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