Two-dimensional electron gas characteristics of InP-based high electron mobility transistor terahertz detector

The samples of In_xGa_(1-x)As/In_(0.52)Al_(0.48)As two-dimensional electron gas(2DEG)are grown by molecular beam epitaxy(MBE).In the sample preparation process,the In content and spacer layer thickness are changed and two kinds of methods,i.e.,contrast body doping andδ-doping are used.The samples are analyzed by the Hall measurements at 300 Kand 77 K.The In_xGa_(1-x)As/In_(0.52)Al_(0.48)As 2DEG channel structures with mobilities as high as 10289 cm~2/V·s(300 K)and42040 cm~2/V·s(77 K)are obtained,and the values of carrier concentration(Nc)are 3.465×10~(12)/cm~2and 2.502×10~(12)/cm~2,respectively.The THz response rates of In P-based high electron mobility transistor(HEMT)structures with different gate lengths at 300 K and 77 K temperatures are calculated based on the shallow water wave instability theory.The results provide a reference for the research and preparation of In P-based HEMT THz detectors.     

Optimization of wide band mesa-type enhanced terahertz photoconductive antenna at 1550 nm

A mesa-type enhanced InGaAs/InAlAs multilayer heterostructure(MLHS) terahertz photoconductive antenna(PCA)at 1550 nm is demonstrated on an InP substrate. The InGaAs/InAlAs superlattice multilayer heterostructures are grown and studied with different temperatures and thickness ratios of InGaAs/InAlAs. The PCAs with different gap sizes and pad sizes are fabricated and characterized. The PCAs are evaluated as THz emitters in a THz time domain spectrometer and we measure the optimized THz bandwidth in excess of 2 THz.     

Proper In deposition amount for on-demand epitaxy of InAs/GaAs single quantum dots

The test-QD in-situ annealing method could surmount the critical nucleation condition of InAs/GaAs single quantum dots(SQDs) to raise the growth repeatability.Here,through many growth tests on rotating substrates,we develop a proper In deposition amount(θ) for SQD growth,according to the measured critical θ for test QD nucleation(θ_c).The proper ratio θ/θ_c,with a large tolerance of the variation of the real substrate temperature(T_(sub)),is 0.964-0.971 at the edge and 0.989 but 0.996 in the center of a 1/4-piece semi-insulating wafer,and around 0.9709 but 0.9714 in the center of a 1/4-piece N~+ wafer as shown in the evolution of QD size and density as θ/θ_c varies.Bright SQDs with spectral lines at 905 nm-935 nm nucleate at the edge and correlate with individual 7 nm-8 nm-height QDs in atomic force microscopy,among dense 1 nm-5 nm-height small QDs with a strong spectral profile around 860 nm-880 nm.The higher T_(sub) in the center forms diluter,taller and uniform QDs,and very dilute SQDs for a proper θ/θ_c:only one 7-nm-height SQD in25 μm~2.On a 2-inch(1 inch = 2.54 cm) semi-insulating wafer,by using θ/θ_c = 0.961,SQDs nucleate in a circle in 22%of the whole area.More SQDs will form in the broad high-T_(sub) region in the center by using a proper θ/θ_c.