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A thin-flexible multiband terahertz metamaterial absorber(MA) has been investigated. Each unit cell of the MA consists of a simple metal structure, which includes the top metal resonator ring and the bottom metallic ground plane,separated by a thin-flexible dielectric spacer. Finite-difference time domain simulation indicates that this MA can achieve over 99% absorption at frequencies of 1.50 THz, 3.33 THz, and 5.40 THz by properly assembling the sandwiched structure.However, because of its asymmetric structure, the MA is polarization-sensitive and can tune the absorptivity of the second absorption peak by changing the incident polarization angle. The effect of the error of the structural parameters on the absorption efficiency is also carefully analyzed in detail to guide the fabrication. Moreover, the proposed MA exhibits high refractive-index sensing sensitivity, which has potential applications in multi-wavelength sensing in the terahertz region. 相似文献
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Improvement of memory characteristics by employing a charge trapping layer with combining bent and flat energy bands 下载免费PDF全文
Designed ZrxSi1-xO2 films with combining bent and flat energy bands are employed as a charge trapping layer for memory capacitors.Compared to a single bent energy band,the bandgap structure with combining bent and flat energy bands exhibits larger memory window,faster program/erase speed,lower charge loss even at 200℃ for 104s,and wider temperature insensitive regions.The tunneling thickness together with electron recaptured efficiency in the trapping layer,and the balance of two competing electron loss mechanisms in the bent and flat energy band regions collectively contribute to the improved memory characteristics.Therefore,the proposed ZrxSi1-xO2 with combining bent and flat energy bands should be a promising candidate for future nonvolatile memory applications,taking into consideration of the trade-off between the operation speed and retention characteristics. 相似文献
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