等离子体填充盘荷波导高频特性分析

从麦克斯韦方程和流体理论出发，推导了填充磁化等离子体慢波结构的基本方程.在大磁场情况下，对等离子体填充盘荷波导的色散特性和耦合阻抗作了研究，结果表明填充等离子体使色散曲线上移，耦合阻抗提高.等离子体填充产生出模式谱非常丰富的周期性低频等离子体模式(TG模式).当等离子体密度增加到一定程度后，场模TM₀₁模的频率范围和TG₀₁模的频率范围相近，两个模式互相耦合产生出新的混合模G₁,G₂.如果相对论行波管工作在混合模上，将会产生新的工作机理. 关键词： 盘荷波导 等离子体填充 色散特性 相对论行波管     

悬浮聚合法制备罗丹明B磁性分子印迹微球及其性能

以罗丹明B（RhB）为模板分子,采用悬浮聚合法制备了罗丹明B磁性印迹微球（M-MIPs）,对其进行了结构表征,并与本体聚合的印迹材料进行了对比。 结果表明,2种聚合物中的Fe3O4均呈现良好的晶形。 悬浮法制得的M-MIPs呈球形,粒径在50 μm左右,其饱和磁化强度(5.406 emu/g)比本体法制得的M-MIP（1.772 emu/g）更大,有利于快速磁性分离。 悬浮法所得M-MIPs的吸附量是本体法所得M-MIPs吸附量的近1.8倍,且在吸附速率、选择性、重复使用性能等方面,均明显优于后者。 2种材料均符合Langmuir吸附模型;悬浮法所得M-MIPs对RhB的吸附过程更符合二级动力学方程,而本体法所得M-MIPs较符合一级动力学方程。 悬浮法制得的M-MIPs更适合于RhB的识别、富集与分析应用。     

基于石墨烯谐振沟道晶体管的高频纳米机电系统信号读取研究

结合石墨烯场效应晶体管和机械谐振原理,研究了基于本地背栅石墨烯谐振沟道晶体管(RCT) 的高频机械信号直接读取方法.利用机械剥离法获得的石墨烯,提出了一种基于刻蚀技术的器件制备方法, 并实现了栅长和栅宽分别为1 μm的本地背栅RCT.实验结果表明,在室温下RCT的谐振频率范围为57.5–88.25 MHz.研究结果对加速石墨烯纳米机电系统和高频低噪声器件的应用有着重要作用. 关键词： 石墨烯 谐振沟道晶体管 纳米机电系统     

Design of high-repetition frequency gating circuit for cathode of image intensifier北大核心CSCD

According to the requirements of high repetition frequency, fast edge speed and small pulse width for cathode gating signal by range-gated technology, a cathode high repetition frequency gating circuit using period and multi-stage acceleration was proposed. By combining the RC circuit and the high-speed gate circuit, the time bias circuit unit was cascaded to generate logic pulses with different time sequences, which could respectively control the intermediate stage drive MOSFET to generate three phased drive signals, and the output of the intermediate stage drive was used as input of the output-stage MOSFET to control the acceleration and retention of its on-off process. It was verified by software simulation and board-level test. The test results show that the proposed gating circuit can increase the edge time of output pulse from μs level to 2 ns, and can provide +50 V/−200 V cathode off/on voltage, so as to achieve a repetition frequency ranging from 0~350 kHZ, a duty ratio of 0~100%, a minimum pulse width of 3.7 ns, and a pulse output delay time jitter of about 0.1 ns. It has important guiding significance for improving the minimum pulse width performance of high-speed and high-voltage gating power, the highest working repetition frequency and reducing the power loss of the device. © 2022 Editorial office of Journal of Applied Optics. All rights reserved.     

High frequency doubling efficiency THz GaAs Schottky barrier diode based on inverted trapezoidal epitaxial cross-section structure

A high-performance terahertz Schottky barrier diode (SBD) with an inverted trapezoidal epitaxial cross-sectional structure featuring high varactor characteristics and reverse breakdown characteristics is reported in this paper. Inductively coupled plasma dry etching and dissolution wet etching are used to define the profile of the epitaxial layer, by which the voltage-dependent variation trend of the thickness of the metal-semiconductor contact depletion layer is modified. The simulation of the inverted trapezoidal epitaxial cross-section SBD is also conducted to explain the physical mechanism of the electric field and space charge region area. Compared with the normal structure, the grading coefficient M increases from 0.47 to 0.52, and the capacitance modulation ratio (C_max/C_min) increases from 6.70 to 7.61. The inverted trapezoidal epitaxial cross-section structure is a promising approach to improve the variable-capacity ratio by eliminating the accumulation of charge at the Schottky electrode edge. A 190 GHz frequency doubler based on the inverted trapezoidal epitaxial cross-section SBD also shows a doubling efficiency of 35% compared to that 30% of a normal SBD.