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Intercalated transition metal dichalcogenides(TMDCs) attract much attention due to their rich properties and potential applications. In this article, we grew successfully high-quality V1/3TaS2 crystals by a vapor transport method. We measured the magnetization, longitudinal resistivity ρxx(T, H), Hall resistivity ρxy(T, H), as well as performed calculations of the electronic band structure. It was found that V1/3TaS2 is an A-type ... 相似文献
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We performed calculations of the electronic band structure and the Fermi surface,measured the longitudinal resistivity ρxx(T,H),Hall resistivity ρxy(T,H),and magnetic susceptibility as a function of temperature at various magnetic fields for VAs2 with a monoclinic crystal structure.The band structure calculations show that VAs2 is a nodal-line semimetal when spin-orbit coupling is ignored.The emergence of a minimum at around11 K in ρxx(T) measured at H=0 demonstrates that some additional magnetic impurities(V4+,S=1/2)exist in VAs2 single crystals,inducing Kondo scattering,evidenced by both the fitting of ρxx(T) data and the susceptibility measurements.It is found that a large positive magnetoresistance(MR) reaching 649% at 10 K and 9 T,its nearly quadratic field dependence,and a field-induced up-turn behavior of ρxx(T) also emerge in VAs2,although MR is not so large due to the existence of additional scattering compared with other topological nontrivial/trivial semimetals.The observed properties are attributed to a perfect charge-carrier compensation,which is evidenced by both the calculations relying on the Fermi surface and the Hall resistivity measurements.These results indicate that the compounds containing V(3d34s2) element can be as a platform for studying the influence of magnetic impurities to the topological properties. 相似文献
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