低能质子束在氢等离子体中的能损研究

实验测量了100 keV的质子束穿过部分电离氢等离子体靶后的能量损失. 等离子体靶由气体放电方式产生, 其自由电子密度在10¹⁶ cm^-3量级, 电子温度约1–2 eV, 维持时间在微秒量级. 研究结果表明: 质子束在等离子体靶中的能量损失与自由电子密度密切相关且明显大于在同密度条件下中性气体靶中的能量损失; 在自由电子密度达到峰值处, 通过实验结果计算得到此时的自由电子库仑对数约为10.8, 与理论计算结果符合较好, 该值比Bethe公式给出的中性气体靶中束缚电子库仑对数高4.3倍,相应的能损增强因子为2.9.     

近玻尔速度Ne2+离子穿过碳膜引起的电子发射

本文测量了入射能为2–25 keV/u的Ne²⁺离子穿过不同厚度碳膜诱导的前向、后向 (分别对应出射表面和入射表面) 电子发射产额. 实验中通过改变炮弹离子的能量, 系统的研究了势能沉积、电子能损以及反冲原子对前向、后向电子发射产额的贡献. 结果表明, 离子的势能沉积只对后向电子发射有贡献, 前向、后向电子发射产额分别与Ne²⁺离子在薄膜出射、入射表面的电子能损近似成正比关系, 其中电子能损很低 (对应于离子能量很低) 的时候, 反冲原子对电子发射的贡献不能忽略. 关键词： 近玻尔速度 电子发射 电子能损 反冲原子     

Charge state effect on the K-shell ionization of iron by xenon ions near the Bohr velocity

Fe K-shell ionization cross sections induced by 2.4–6.0 MeV Xe20+are measured and compared with different binaryencounter-approximation(BEA)models.The results indicate that the BEA model corrected both by the Coulomb repulsion and by the effective nuclear charge(Zeff)agrees well with the experimental data.Comparison of Fe K-shell X-ray emission induced by 5 MeV xenon ions with different initial charge states(20+,22+,26+,30+)verifies the applicability of the effective nuclear charge(Zeff)correction for the BEA model.It is found that Zeffcorrection is reasonable to describe direct ionization induced by xenon ions with no initial M-shell vacancies.However,when the M shell is opened,the Zeffcorrected BEA model is unable to explain the inner-shell ionization,and the electron transfer by molecular-orbital promotion should be considered.     

Simulations of guiding of low-energy ions through a single nanocapillary in insulating materials

Simulations of guiding of low-energy ions through a single nanocapillary in insulating polymers are reported. The nanocapillary has a diameter of 100 nm and a length of 10 μm. Different from previous work, in our simulations a hyperbolic function is used to describe the decay of the charges deposited on the capillary surface. The present simulations reproduce the self-organized charge-up process occurring in the capillary. It is shown that lower-energy ions undergo more oscillations to get guiding equilibrium than those of higher-energy ions, resulting in a longer charging time, which is in good agreement with previous experimental results. Moreover, the experimentally observed mass independence of ion guiding is proved in our simulations. In particular, it is found that the maximum of the repulsive field within the capillary is independent of the ion energy as well as the tilt angle. To counterbalance the increasing of the transversal energy caused by increasing the tilt angle or incident energy, the effective length of the repulsive field is expanded in a self-organizing manner.     

O~(2+)离子穿过碳膜引起的前后表面电子发射

测量了入射能为1.9~11.3 keV/u的O~(2+)离子穿过碳膜诱导的前向、后向(分别对应出射表面和入射表面)电子发射产额。实验中,通过改变入射离子的能量和流强,系统地研究了电子能损和离子束流强度对前向、后向电子发射产额的影响。结果表明,在本实验的能量范围内,前向、后向电子发射产额与对应表面的电子能损有近似的正比关系,而与束流强度无关。分析还发现引起后向电子发射的动能阈值约为0.2 keV/u,势能电子发射产额约为1 e~-/ion。     

129Xeq+轰击N型和P型Si表面时的电子发射产额研究

在兰州重离子加速器国家实验室测量了1.8 MeV Xeq+离子分别轰击N型和P型Si两种靶材表面时的电子发射产额。实验中,通过改变入射离子的电荷态,研究了入射离子势能沉积对两种靶材表面电子发射产额的贡献。结果发现同一离子入射时,N型Si表面的电子发射产额高出P型Si表面的电子发射产额约12.5%;对于具有相同入射动能的Xeq+离子,两种靶材表面的电子发射产额均随着入射离子势能的增加而线性增加。此外,还测量了3.4 MeV Xeq+离子分别轰击以上两种靶材时的电子发射产额,得到了类似的结果。本文利用功函数分别从动能电子发射和势能电子发射两个角度对实验结果进行了分析讨论。The electron emissions from N-type Si and P-type Si induced by 1.8 MeV 129Xeq+are measured in the National Laboratory of Heavy Ion Research Facility in Lanzhou,The contribution to electron emission yield from potential energy of incident ions is studied through changing the charge state of incident ions.The results show that for the same incident ion,electron emission yield of N type Si surface is higher than that of P-type Si surface about 12.5%.For incident ions with the same kinetic energy,both electron emission yields of two targets increase linearly with incident ion energy.In addition,the electron emissions induced by 3.4 MeV 129Xeq+from N-type Si and P-type Si mentioned above are measured,which give similar results.The experimental results are analyzed and discussed using work function from two angles of the kinetic electron emission and the potential energy electron emission.     

低能O~(5+)离子穿过H_2靶后的电荷态分布

实验测量了0.75 MeV的O5+离子穿过一定长度不同原子数密度H2靶后的电荷态分布;理论模拟了出射离子的平均电荷态以及达到平衡后的平均电荷态,得到了与实验吻合较好的结果。研究表明,随着靶原子数密度的增大,离子在碰撞过程中俘获电子的几率随之增加,平均电荷态降低;当靶原子数密度达到或超过1014 cm-3,入射离子俘获电子和被碰撞电离的两个作用过程达到平衡,出射离子的平衡平均电荷态约为1.2。     

近玻尔速度氙离子激发钒的K壳层X射线

测量了2.4—6.0 MeV Xe~(20+)离子轰击V靶表面过程中辐射的X射线.计算了V的K壳层X射线发射截面,并将实验结果与平面波恩近似、ECPSSR、两体碰撞近似的理论计算进行了对比.讨论了近玻尔速度非对称碰撞过程中,BEA模型估算高电荷态重离子激发内壳层电离的修正因素.结果表明,综合考虑库仑偏转和有效电荷态修正后,BEA理论与实验结果符合较好.