萃取温度对无灰煤结构及煤基活性炭电化学性能的影响

以内蒙古褐煤为原料,N-甲基吡咯烷酮为萃取剂,在不同温度下萃取制备无灰煤,进而利用KOH活化法制备活性炭,探究萃取温度对活性炭电化学性能的影响。结果表明,无灰煤萃取温度对煤基活性炭电化学性能有显著影响。对无灰煤及原料褐煤的灰分含量,表面官能团含量和对应活性炭的比表面积、孔结构及其电化学性能进行对比发现,330℃下萃取制备出的无灰煤在碱煤质量比3∶1,活化温度650℃,活化时间2h的活化过程中具备最适宜的反应性,对应活性炭比表面积高达1 252 m~2·g~(-1),表面官能团含量适中,在3 mol·L~(-1)KOH电解液中50 mA·g~(-1)电流密度下比电容高达322 F·g~(-1),2 A·g~(-1)的电流密度下比电容保持率仍可接近90%。     

稀土对小麦(Tricum aeseirum),体内光合碳代谢中关键酶RuBPCase-OXase PEPCase和光呼吸的影响

本论文研究了光合作用暗反应中的二个关键酶：ＲｕＢＰＣａｓｅ－ＯＸａｓｅ和ＰＥＰＣａｓｅ．稀土使这两个酶羧化活性提高．稀土使ＲｕＢＰＣａｓｅ活性增加由两方面原因造成：１、稀土使ＲｕＢＰＣａｓｅ本身活性增加，２、稀土使ＲｕＢＰＣａｓｅ含量增加．稀土对ＲｕＢＰＯＸａｓｅ的加氧活性影响不大．因此对光呼吸影响不大．稀土使ＲｕＢＰＣａｓｅ－ＯＸａｓｅ的Ｃａｓｅ／ＯＸａｓｅ比值增加，有利于反应向羧化方向进行     

GaNAs基超晶格太阳电池的分子束外延生长与器件特性

采用分子束外延(MBE)生长技术生长了周期厚度不同的1 e V吸收带边的Ga N0.03As0.97/In0.09Ga0.91As应变补偿短周期超晶格(SPSL)。高分辨率X射线衍射(HRXRD)测量结果显示,当周期厚度从6 nm增加到20 nm时,超晶格的结晶质量明显改善。然而,当周期厚度继续增加时,超晶格品质劣化。对超晶格周期良好的样品通过退火优化,获得了具有低温光致发光现象的高含N量Ga NAs/In Ga As超晶格,吸收带边位于1 e V附近。使用10个周期的Ga NAs/In Ga As超晶格(10 nm/10 nm)和Ga As组成的p-i-n太阳电池的短路电流达到10.23 m A/cm2。经聚光测试获得的饱和电流密度、二极管理想因子与由电池暗态电流-电压曲线得到的结果一致。     

稀土对小麦（Tricum aeseirum）,体内光合碳代谢中关键酶RuBPCase …

本论文研究了光合作用暗反应中的二个关键酶：ＲｕＢＰＣａｓｅ－ＯＸａｓｅ和ＰＥＰＣａｓｅ，稀土使这两个酶羧化活性提高，稀土使ＲｕＢＰＣａｓｅ活性增加而两方面原因造成，１．稀土使ＲｕＢＰＣａｓｅ本身活性增加２．增土使ＲｕＢＰＣａｓｅ含量增加，稀土对ＲｕＢＰＯＸａｓｅ的加氧活性影响不大，因此对光呼吸影响不大。     

Crystalline silicon surface passivation investigated by thermal atomic-layer-deposited aluminum oxide

Atomic-layer-deposited(ALD) aluminum oxide(Al_2O_3) has demonstrated an excellent surface passivation for crystalline silicon(c-Si) surfaces, as well as for highly boron-doped c-Si surfaces. In this paper, water-based thermal atomic layer deposition of Al_2O_3 films are fabricated for c-Si surface passivation. The influence of deposition conditions on the passivation quality is investigated. The results show that the excellent passivation on n-type c-Si can be achieved at a low thermal budget of 250℃ given a gas pressure of 0.15 Torr. The thickness-dependence of surface passivation indicates that the effective minority carrier lifetime increases drastically when the thickness of Al_2O_3 is larger than 10 nm. The influence of thermal post annealing treatments is also studied. Comparable carrier lifetime is achieved when Al_2O_3 sample is annealed for 15 min in forming gas in a temperature range from 400℃ to 450℃. In addition, the passivation quality can be further improved when a thin PECVD-SiN_x cap layer is prepared on Al_2O_3, and an effective minority carrier lifetime of2.8 ms and implied Voc of 721 mV are obtained. In addition, several novel methods are proposed to restrain blistering.     

Studies on the polycrystalline silicon/SiO_2 stack as front surface field for IBC solar cells by two-dimensional simulations

Interdigitated back contact(IBC) solar cells can achieve a very high efficiency due to its less optical losses. But IBC solar cells demand for high quality passivation of the front surface. In this paper, a polycrystalline silicon/SiO_2 stack structure as front surface field to passivate the front surface of IBC solar cells is proposed. The passivation quality of this structure is investigated by two dimensional simulations. Polycrystalline silicon layer and SiO_2 layer are optimized to get the best passivation quality of the IBC solar cell. Simulation results indicate that the doping level of polycrystalline silicon should be high enough to allow a very thin polycrystalline silicon layer to ensure an effective passivation and small optical losses at the same time. The thickness of SiO_2 should be neither too thin nor too thick, and the optimal thickness is 1.2 nm.Furthermore, the lateral transport properties of electrons are investigated, and the simulation results indicate that a high doping level and conductivity of polycrystalline silicon can improve the lateral transportation of electrons and then the cell performance.     

黄芩素纯度标准物质的定值及其不确定度评定

为了满足食品及医药等领域的检测需求,研制了黄芩素纯度标准物质。采用液相色谱–质谱法和红外光谱法对黄芩素纯度标准物质原料定性后,利用高效液相色谱法(HPLC)和定量核磁技术(Quantitative Nuclear Magnetic Resonance Spectroscopy,QNMR)对黄芩素的纯度进行了定值,并用HPLC法对黄芩素纯度标准物质进行了均匀性检验和稳定性考察。对定值结果的不确定度进行了评价,研制的黄芩素纯度标准物质的定值结果和扩展不确定度分别为98.8%,0.8%(k=2)。