A simple and accurate method for measuring program/erase speed in a memory capacitor structure

With the merits of a simple process and a short fabrication period, the capacitor structure provides a convenient way to evaluate memory characteristics of charge trap memory devices. However, the slow minority carrier generation in a capacitor often makes an underestimation of the program/erase speed. In this paper, illumination around a memory capacitor is proposed to enhance the generation of minority carriers so that an accurate measurement of the program/erase speed can be achieved. From the dependence of the inversion capacitance on frequency, a time constant is extracted to quantitatively characterize the formation of the inversion layer. Experimental results show that under a high enough illumination, this time constant is greatly reduced and the measured minority carrier-related program/erase speed is in agreement with the reported value in a transistor structure.     

A simple and accurate method to measure program/erase speed in a memory capacitor structure

With the merits of simple process and short fabrication period, the capacitor structure provides a convenient way to evaluate memory characteristics of charge trap memory devices. However, the slow minority carrier generation in a capacitor often makes an underestimation of the program/erase speed. In this paper, illumination around a memory capacitor is proposed to enhance the generation of minority carriers so that an accurate measurement of the program/erase speed can be achieved. From the dependence of the inversion capacitance on frequency, a time constant is extracted to quantitatively characterize the formation of the inversion layer. Experimental results show that under a high enough illumination, this time constant is greatly reduced and the measured minority carrier related program/erase speed is in agreement with the reported value in a transistor structure.