A simple and accurate method for measuring program/erase speed in a memory capacitor structure |
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Authors: | Jin Lin ab Zhang Man-Hong a Huo Zong-Liang a Wang Yong a Yu Zhao-An a Jiang Dan-Dan ab Chen Jun-Ning b and Liu Ming |
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Institution: | a) a) Institute of Microelectronics, Chinese Academy of Sciences, Beijing 100029, China b) School of Electronics and Information Engineering, Anhui University, Hefei 230039, China |
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Abstract: | With the merits of a simple process and a short fabrication period, the capacitor structure provides a convenient way to evaluate memory characteristics of charge trap memory devices. However, the slow minority carrier generation in a capacitor often makes an underestimation of the program/erase speed. In this paper, illumination around a memory capacitor is proposed to enhance the generation of minority carriers so that an accurate measurement of the program/erase speed can be achieved. From the dependence of the inversion capacitance on frequency, a time constant is extracted to quantitatively characterize the formation of the inversion layer. Experimental results show that under a high enough illumination, this time constant is greatly reduced and the measured minority carrier-related program/erase speed is in agreement with the reported value in a transistor structure. |
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Keywords: | memory capacitor program/erase speed minority carrier generation illumination |
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