关节测量臂在上海光源元件标定中的应用

 关节测量臂以便携、高精度的小尺寸测量性能在上海光源的元件标定过程中得到了广泛应用。介绍了上海光源元件标定的方案设计,操作工艺以及质量保证措施等,着重探讨了关节测量臂的合理使用。在仪器使用过程中,利用软件的学习功能有效地提高了工作效率;通过将温度变化控制在2 ℃范围内,并利用标准尺及不同仪器的标定结果相互比较来控制、监测系统误差等,从而保证高精度的测量结果。     

上海光源准直测量方案设计

 上海光源在准直测量方案设计中面临的最大挑战来自于松软地基及高精度的定位要求。上海光源的准直过程分为控制网测量、元件标定、预安装准直、现场安装及平滑测量5个关键步骤。采用激光跟踪仪和静力水准系统等测量手段，将控制网精度设计为0.08 mm，其余步骤精度达到0.05 mm，以保证相邻共架机构的准直精度达到0.12 mm，优于0.15 mm的设计指标。方案在注重精度指标的同时，还兼顾了可靠性、测量效率、费用及实时监测的可能性。     

Improved 4H-SiC UMOSFET with super-junction shield region

This article investigates an improved 4H-SiC trench gate metal-oxide-semiconductor field-effect transistor (MOSFET) (UMOSFET) fitted with a super-junction (SJ) shielded region. The modified structure is composed of two n-type conductive pillars, three p-type conductive pillars, an oxide trench under the gate, and a light n-type current spreading layer (NCSL) under the p-body. The n-type conductive pillars and the light n-type current spreading layer provide two paths to and promote the diffusion of a transverse current in the epitaxial layer, thus improving the specific on-resistance ($R_{\rm on,sp}$). There are three p-type pillars in the modified structure, with the p-type pillars on both sides playing the same role. The p-type conductive pillars relieve the electric field ($E$-field) in the corner of the trench bottom. Two-dimensional simulation (silvaco TCAD) indicates that $R_{\rm on,sp }$ of the modified structure, and breakdown voltage ($V_{\rm BR}$) are improved by 22.2% and 21.1% respectively, while the maximum figure of merit (${\rm FOM}=V^{2}_{\rm BR}/R_{\rm on,sp}$) is improved by 79.0%. Furthermore, the improved structure achieves a light smaller low gate-to-drain charge ($Q_{\rm gd}$) and when compared with the conventional UMOSFET (conventional-UMOS), it displays great advantages for reducing the switching energy loss. These advantages are due to the fact that the p-type conductive pillars and n-type conductive pillars configured under the gate provide a substantial charge balance, which also enables the charge carriers to be extracted quickly. In the end, under the condition of the same total charge quantity, the simulation comparison of gate charge and OFF-state characteristics between Gauss-doped structure and uniform-doped structure shows that Gauss-doped structure increases the $V_{\rm BR}$ of the device without degradation of dynamic performance.     

三维控制网技术在BEPCⅡ储存环中的应用研究

介绍了加速器准直测量控制网的特点及BEPCⅡ储存环的控制网, 给出了基于全站仪和激光跟踪仪的三维控制网技术在该工程中的研究和应用情况, 联合利用这两种仪器, 采用三维测量方式建立了一个高精度的测量控制网, 着重分析了三维控制网的优缺点及增加全站仪观测值后对控制网精度的贡献, 并指出三维控制网技术具有较好的应用前景.