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1.
X-ray powder diffraction and thermogravimetry (TG) are used to study the solid compounds formed upon joint hydrolysis of antimony pentachloride and phosphoric acid in the molar ratio range of 1.35 < Sb/P < 12. The products retain the pyrochlore structure motif intrinsic to crystalline polyantimonic acid, the increasing phosphorus concentration deteriorates the degree of crystallinity of the products. Contributions of various factors into diffraction peak broadening are ascertained. The effect of phosphorus on the structure of the products is discussed on the basis of X-ray powder diffraction and TG data. 相似文献
2.
Zakhar V. Khaidukov Mikhail A. Zubkov 《The European Physical Journal B - Condensed Matter and Complex Systems》2016,89(10):213
We consider graphene in the presence of external magnetic field and elastic deformations that cause emergent magnetic field. The total magnetic field results in the appearance of Landau levels in the spectrum of quasiparticles. In addition, the quasiparticles in graphene experience the emergent gravity. We consider the particular choice of elastic deformation, which gives constant emergent magnetic field and vanishing torsion. Emergent gravity may be considered as perturbation. We demonstrate that the corresponding first order approximation affects the energies of the Landau levels only through the constant renormalization of Fermi velocity. The degeneracy of each Landau level receives correction, which depends essentially on the geometry of the sample. There is the limiting case of the considered elastic deformation, that corresponds to the uniformly stretched graphene. In this case in the presence of the external magnetic field the degeneracies of the Landau levels remain unchanged. 相似文献
3.
We prove that the componentwise maximum of an i.i.d. triangular array of chi-square random vectors converges in distribution,
under appropriate assumptions on the dependence within the vectors and after normalization, to the max-stable Hüsler–Reiss
distribution. As a by-product we derive a conditional limit result. 相似文献
4.
Shestakova Tatyana S. Deev Sergey L. Khalymbadzha Igor А. Rusinov Vladimir L. Paramonov Alexander S. Arseniev Alexander S. Shenkarev Zakhar O. Charushin Valery N. Chupakhin Oleg N. 《Chemistry of Heterocyclic Compounds》2021,57(4):479-482
Chemistry of Heterocyclic Compounds - Isotope-labeled antiviral drug Triazavirin containing 2H, 13C, and 15N atoms in its structure has been synthesized. 13C2H3I and KS13CN served as donors of 13C... 相似文献
5.
Roman V. Tominov Zakhar E. Vakulov Vadim I. Avilov Daniil A. Khakhulin Nikita V. Polupanov Vladimir A. Smirnov Oleg A. Ageev 《Molecules (Basel, Switzerland)》2021,26(1)
We have experimentally studied the influence of pulsed laser deposition parameters on the morphological and electrophysical parameters of vanadium oxide films. It is shown that an increase in the number of laser pulses from 10,000 to 60,000 and an oxygen pressure from 3 × 10−4 Torr to 3 × 10−2 Torr makes it possible to form vanadium oxide films with a thickness from 22.3 ± 4.4 nm to 131.7 ± 14.4 nm, a surface roughness from 7.8 ± 1.1 nm to 37.1 ± 11.2 nm, electron concentration from (0.32 ± 0.07) × 1017 cm−3 to (42.64 ± 4.46) × 1017 cm−3, electron mobility from 0.25 ± 0.03 cm2/(V·s) to 7.12 ± 1.32 cm2/(V·s), and resistivity from 6.32 ± 2.21 Ω·cm to 723.74 ± 89.21 Ω·cm. The regimes at which vanadium oxide films with a thickness of 22.3 ± 4.4 nm, a roughness of 7.8 ± 1.1 nm, and a resistivity of 6.32 ± 2.21 Ω·cm are obtained for their potential use in the fabrication of ReRAM neuromorphic systems. It is shown that a 22.3 ± 4.4 nm thick vanadium oxide film has the bipolar effect of resistive switching. The resistance in the high state was (89.42 ± 32.37) × 106 Ω, the resistance in the low state was equal to (6.34 ± 2.34) × 103 Ω, and the ratio RHRS/RLRS was about 14,104. The results can be used in the manufacture of a new generation of micro- and nanoelectronics elements to create ReRAM of neuromorphic systems based on vanadium oxide thin films. 相似文献
6.
L. E. Vorobjev D. A. Firsov V. A. Shalygin V. Yu. Panevin A. N. Sofronov A. Yu. Egorov V. M. Ustinov A. G. Gladyshev O. V. Bondarenko A. V. Andrianov A. O. Zakhar’in D. V. Kozlov 《Bulletin of the Russian Academy of Sciences: Physics》2008,72(2):212-214
Emission of terahertz radiation from strained Be-doped GaAsN layers has been revealed at 4.2 K in postbreakdown electric fields. Heavy and light hole subbands are split in strained layers, and, along with localized acceptor states, resonant states arise. The spectrum of terahertz radiation has been obtained, the current-voltage characteristics of the samples were investigated, and the energy spectra of acceptors were calculated. Peaks in the spontaneous emission spectrum correlate well with the results of the energy spectrum calculations. The transitions between the resonant and localized states of the acceptors make the main contribution to the terahertz radiation intensity. 相似文献
7.
8.
A. V. Voitsekhovskii S. N. Nesmelov A. P. Kokhanenko Yu. P. Mashukov T. I. Zakhar’yash V. V. Vasil’ev V. S. Varavin Yu. G. Sidorov S. A. Dvoretskii N. N. Mikhailov 《Russian Physics Journal》2005,48(2):143-147
The voltage dependence of photo-emf in the HgCdTe/SiO
2
/Si
3
N
4
and HgCdTe/AOF MIS structures is experimentally studied. The heteroepitaxial graded-band films Hg
0.78
Cd
0.22
Te were produced on the GaAs substrates by molecular-beam epitaxy. It was found that the type of field dependence of photo-emf is related to the conduction type of the semiconductor used and to the presence of near-surface graded-band layers.__________Translated from Izvestiya Vysshikh Uchebnykh Zavedenii, Fizika, No. 2, pp. 35–39, February, 2005. 相似文献
9.
D. A. Firsov L. E. Vorobjev V. A. Shalygin V. Yu. Panevin A. N. Sofronov S. D. Ganichev S. N. Danilov A. V. Andrianov A. O. Zakhar’in A. E. Zhukov V. S. Mikhrin A. P. Vasil’ev 《Bulletin of the Russian Academy of Sciences: Physics》2008,72(2):246-248
Spontaneous emission of terahertz radiation from structures with GaAs/AlGaAs quantum wells in a longitudinal magnetic field has been studied. It is shown that some bands in the emission spectrum can be related to radiative electron transitions between resonant and localized impurity states, as well as to the transitions with participation of subband states. The temperature dependence of the equilibrium intraband absorption of terahertz radiation and its modulation in a longitudinal electric field in GaAs/AlGaAs quantum wells has been investigated. 相似文献
10.
Zakhar Kabluchko 《Extremes》2009,12(4):401-424
To each max-stable process with α-Fréchet margins, α ∈ (0,2), a symmetric α-stable process can be associated in a natural way. Using this correspondence, we deduce known and new results on spectral
representations of max-stable processes from their α-stable counterparts. We investigate the connection between the ergodic properties of a stationary max-stable process and
the recurrence properties of the non-singular flow generating its spectral representation. In particular, we show that a stationary
max-stable process is ergodic iff the flow generating its spectral representation has vanishing positive recurrent component.
We prove that a stationary max-stable process is ergodic (mixing) iff the associated SαS process is ergodic (mixing). We construct non-singular flows generating the max-stable processes of Brown and Resnick. 相似文献