Study of the charge-exchange reactions\pi ^ - p \to (\pi ^0 ,\eta ,\eta \prime )n at 63 GeV

Muon electron pairs were detected in an Al multiplate spark chamber, exposed to a neutrino beam from the CERN PS. The leptons were not accompanied by other particles, except occasionally by protons. The background came mainly from muon associated π⁰ production, with one decay gamma lost. It was determined empirically, together with the small contribution from υ _e reactions. For electron energies above 2 GeV the background is 5.7±1.5 events, whereas 18 (μe)-candidates have been observed. Hence the effect is established, with a rate of about 10^?4 as compared to the muonic reactions above 3 GeV. Charm creation as the origin of this (μe)-production process is excluded; heavy neutral lepton production does not fit the kinematics observed. Instead the events are compatible with the two-body decay of an object with variable invariant mass of order 1 GeV, possibly resulting from axion interactions.     

Hyperfine magnetic fields at sp-sites in Co2YZ Heusler alloys

The systematics of hyperfine magnetic fields at sp impurities on the Z-sites in Co based Heusler alloys are investigated. New TDPAC measurements of Cd hyperfine fields are reported.     

Concerning seven and eight mutually orthogonal Latin squares

In this paper, three new direct Mutually Orthogonal Latin Squares (MOLS) constructions are presented for 7 MOLS(24), 7 MOLS(75) and 8 MOLS(36); then using recursive methods, several new constructions for 7 and 8 MOLS are obtained. These reduce the largest value for which 7 MOLS are unknown from 780 to 570, and the largest odd value for which 8 MOLS are unknown from 1935 to 419. © 2003 Wiley Periodicals, Inc.     

Extended X-ray absorption fine structure studies of thulium doped GaN epilayers

The local structure of Tm³⁺ ions incorporated into GaN epilayers was studied by means of Extended X-ray Absorption Fine Structure. The samples were doped either in situ during growth by Molecular Beam Epitaxy or by ion implantation of layers grown by Metal Organic Chemical Vapour Deposition. The implantation was done at ion energy of 300 keV and different nominal fluences of 3×10¹⁵, 4×10¹⁵ cm⁻² and 5×10¹⁵ cm⁻². The concentration of Tm in the samples studied was measured by Wavelength Dispersive X-ray analysis. For the in situ doped sample with concentration of 0.5%, and for all of the implanted samples, Tm was found on the Ga site in GaN. The ion implanted sample and an in situ doped sample with a similar concentration of Tm showed the same local structure, which suggests that the lattice site occupied by Tm does not depend on the doping method. When the average Tm concentration for in situ doped samples is increased to 1.2% and 2.0%, Tm is found to occupy the Ga substitutional site and the presence of a substantial number of Tm ions in the second coordination sphere indicates dopant clustering in the films. The formation of pure TmN clusters was found in an in situ doped sample with a dopant concentration of 3.4%.     

Ultrasonic analysis of edible fats and oils

Low intensity ultrasound is a powerful analytical technique for investigating the physico-chemical properties of many biological and non-biological materials. In this article its application for the characterization of edible fats and oils is assessed. Ultrasound can be used to determine the dynamic rheology and composition of oils, the oil content and droplet size of emulsions and the solid fat content of partially crystalline emulsions. It is capable of rapid and precise measurements, is non-destructive and non-invasive, can be used on-line or off-line and is relatively inexpensive. Ultrasonic techniques will therefore prove a useful addition to the existing analytical techniques used to characterize fats and oils.     

The influence of glass coating on the single domain wall potential in amorphous glass-coated Fe-based microwires

The effect of the glass coating on the single domain wall potential in amorphous glass-coated Fe-based microwire has been studied by the switching field distribution technique. The thermoactivated mechanism model is used to describe the thermally activated switching through the complex energy barrier in amorphous FeSiB microwires. Glass removal leads to the increase of the probability of the thermally activated switching pointing to the decrease of the energy barrier.